Enabling the Next Generation of High-Voltage Power: Gallium Oxide Trench Schottky Diodes from Simulation to System
β-Ga2O3 is set to revolutionize high-voltage power conversion, with ultra-low losses and a high critical electric field that make it ideal for next-generation power devices, enabling three-phase HVDC AC/DC and DC/AC conversion in the 1–6 kV, 0.5–0.8 kA range for AI data centre power delivery, renewable energy systems, high-voltage circuit breakers, and ESD protection.
