Leakage Current TCAD Calibration in a-Si TFTs
This webinar will outline in detail a calibration procedure used for amorphous silicon Thin-Film Transistors (a-Si TFTs) where TCAD simulations are compared to measurements. We will present a TCAD calibration procedure with emphasis on leakage current, which will help attendees to design and optimize a-Si TFT technology. In this webinar we will review generic and specific physical models used during TFT TCAD simulation including density of states (DOS) and band to band tunneling.
What attendees will learn:
- Basic concepts of a-Si TFT TCAD simulation
- Basic equations
- Physical parameters
- Density of states model
- TCAD calibration procedure example
- Process and Device simulations for IV curve generation
- Understanding and use of density of states models
- Understanding and use of probability of occupation function
- Correlation between density of states and current density
Presenter
Nam-Kyun Tak is a Senior TCAD Application Engineer at Silvaco. Since joining Silvaco in 2010, he has worked on TFT technology development. Prior to joining Silvaco, he worked for 6 years in Samsung Electronics, where he was involved in DRAM development.
Nam-Kyun Tak received B.S. and M.S. degrees in electrical engineering and computer science from Kyungpook National University, Daegu, Korea.
When: March 6, 2014
Where: Online
Time: 10:00am-11:00am – (PST)
Language: English
WHO SHOULD ATTEND:
Academics, engineers and management looking for solutions to calibrate TCAD simulation data to measurement data of a-Si TFT devices.