ZnO based LED: A Performance Optimization through TCAD Simulation

Abstract

In this paper, a two dimensional (2-D) generic model of quantum well light emitting diode (LED) based on ZnO, II-VI compound semiconductors has been reported. The structure has been designed and analyzed using ATLAS in conjuction with the BLAZE and LED modules of SILVACO software. A closed model has been developed for electrical and optical characterization of the device. The model includes all the relevant material physics and solutions of non-linear decoupled semiconductor transport and Poisson’s equations. All the radiative and non radiative recombination mechanisms have been given their due consideration in this analysis. The results obtained on the basis of numerical simulation exhibits the potential advantages of wide band gap ZnO material based LEDs over its competitive GaN material based LEDs.