New Berkeley BSIM4v2.1 MOSFET Model
Available Within SmartSpice/UTMOST III

Introduction

So far the BSIM3v3.2 MOSFET model, developed by UC-Berkeley, has been considered as the industry standard model for deep-submicron CMOS design. It was rapidly adopted by IC companies and foundries for modeling devices down to 0.25 . However, for device scale down to 0.10 , some physical mechanisms need to be better characterized.