3D SOI NMOSFET Simulation Using VICTORY DEVICE
Abstract
SOI MOSFETs can exhibit a kink in their Id/Vd curves, which is caused by impact ionization, floating potentials, and other effects. One way of suppressing this kink effect is to supply the device with a body contact. With a body contact, however, the geometry of the device becomes fully three dimensional. In this paper, we show how an SOI MOSFET with a body contact can be simulated in VICTORY DEVICE. 3D visualizations from the VICTORY DEVICE results illustrate how the body contact acts to suppress the kink effect.
Motivation
Silicon-on-Insulator (SOI) technology continues to see application in state-of-the-art CMOS designs, because of the performance advantages it offers compared to devices on a silicon substrate. These advantages include higher switching speed, lower power consumption, smaller size, resistance to latch-up, reduced temperature sensitivity and lower substrate noise. On the other hand, SOI devices may experience history effects, greater self heating, and the possibility of improper circuit operation due to parasitic bipolar currents [1,2].
