Simulation Standard
Technical Journal
A Journal for Process and Device Engineers
Hints, Tips, and Solutions – Achieve Publication Quality Plots Using TonyPlot
Yes, TonyPlot has many various display and preference settings that users can adjust, transforming their simulation data into a high quality plot for use in publications.
Simulations of Deep-Level Transient Spectroscopy for 4H-SiC
Silicon carbide is expected to be an excellent device material as high voltage and low-loss power devices. Recently, SBD (Schottky Barrier Diode) and MOSFET based on silicon carbide have been realized [1-3], however, those devices have some problems for its reliability and control of the IV characteristics. The problems are related to defects in the bulk and at the interface of insulator/semiconductor. The concentration (~5e12[/cm3]) of the defects is 2 orders higher than that of silicon [4], and so the defects cause degradation of device characteristics. The investigation of the defect property is important for the improvement of the device performance.
Generally Applicable Degradation Model for Silicon MOS Devices
The main cause of operational degradation in MOS devices is believed to be due to the buildup of charge at the Silicon-Oxide interface. This leads to reduced saturation currents and threshold voltage shifts in MOSFET devices. Physics-based models of the degradation process typically consider the breaking of Si-H bonds (depassivation) at the Silicon-Oxide interface to be the main cause of the operational degradation. A new general model of Si-H bond breaking has recently been included in Atlas, adding to the Silvaco TCAD portfolio of degradation models[1].
Hints, Tips, and Solutions – Simulation on a Cluster of Computers Using the Distributed Computing Feature
A new feature that is introduced in Silvaco’s TCAD applications allows the user to run a parallel simulation on a cluster of computers within a network.
Hints, Tips and Solutions – Illuminate a 3D device in a Victory Device Opto-electronic Simulation
A: The 2 basic commands needed to illuminate a structure in Victory Device are BEAM and SOLVE. A single (or multiple) BEAM statement(s) are specified containing the light source properties. The SOLVE statement is used to execute a BEAM at a user-defined optical intensity.
Atlas Simulation of GaN-Based Super Heterojunction Field Effect Transistors Using the Polarization Junction Concept
Wide-bandgap semiconductors such as SiC and GaN have attracted much attention because they are expected to break through the material limits of silicon. In particular, AlGaN/GaN HEMTs are generally promising candidates for switching power transistors due to their high electric field strength and the high current density in the transistor channel giving a low on-state resistance.