It is well known that analyzing LVS reports is often a difficult and brain-teasing task because the "global" nature of connectivity. Unlike DRC reports, where geometrical violations are usually restricted to two shapes, in LVS one must take into account many "widely separated" elements. In addition, quite often a small netlist error will propagate itself in an avalanche manner. Therefore many efforts are directed to localization of LVS errors in Guardian reports, as well as to means of efficient inspection of these reports.

A simple way to add custom commands to Expert's menu is implemented. It is possible to add menu items that execute xi-commands or procedures. To do this, you must put a file named 'custom.mnu' with syntax described below into Expert's executable directory and start (or restart) Expert.

The Gate-All-Around SOI transistor [1], in which the gate oxide and the gate electrode are wrapped around the semiconductor region between the source and drain electrodes, exhibits very attractive features [2,3]. This device has been shown to present excellent Ion/Ioff trade-off, good threshold voltage roll-off reduction and better resisting to short-channel effect and DIBL. In this study, based on the self-consistent solution of Schrodinger and Poisson equations, we attempt to show that the maximum of electrons concentration can be located in the middle of the semiconductor film and that there exists an "optimal" thickness of the Si-film.