• Simulation Standard Technical Journal

Simulation Standard

Technical Journal

A Journal for Process and Device Engineers

Hints & Tips October 1999

A. It is likely that there may be some contact problems or defected devices during the data collection. This problem can occur when the log file is open and some good device data has already been stored in the log file. Then it becomes a time consuming process to close the log file, deselect the good devices from the device strategy screen, append the log file and re-measure the device which created the problem.

New Improvements in TFT Models: Amorphous (Level=35) and Poly-Silicon (Level=36) TFT

New improvements have been added to Shur models. These enhancements include a self-heating effect and a new charge conservative model.

BSIM3SOI Version 2.1 (FD, DD and PD) Models Released in SmartSpice

The Berkeley BSIM3SOI version 2.1 models, released in September 1999, have been implemented in SmartSpice. The three new models are selected according to LEVEL selector.

Hints & Tips September 1999

Q: How can I cut exactly the same hole in many layers? A: There are at least two ways to do this. (1) You may use the command Tools>>Cut by Line as follows.

Scholar: An Enhanced Multi-Platform Schematic Capture

One of the main features of modern complex CAD systems consists in the ability to support the schematic capture function that provides a user with convenient design entry. In our opinion, a perfect schematic capture subsystem (SC) possesses the following features that differ it from other graphic intensive CAD tools such as layout editors:

Hints & Tips August 1999

A: Modeling of the increase in breakdown voltage at elevated temperatures requires a model to describe the temperature dependence of the impact ionization coefficients. In ATLAS there are two impact ionization models that include lattice temperature dependence. They are the Crowell-Sze model[1] called using the command IMPACT CROWELL and the Selberrherr Model[2] called using the command IMPACT SELB.