• Simulation Standard Technical Journal

Simulation Standard

Technical Journal

A Journal for Process and Device Engineers

Dragon DRC: Performance Improvement Techniques

Dragon DRC is a new advanced hierarchical DRC system. The design principles this system is based on are carefully selected to ensure that Dragon DRC will deliver maximum performance in different execution environments. Designed as a highly adaptive and truly hierarchical DRC system, Dragon is able to execute DRC scripts much faster than any flat DRC system in most real-life cases.

Maverick and Guardian – Enhancements

The latest release of Layout versus Schematic tools from CELEBRITY CAD suite (Maverick full-chip parametric netlist extractor and Guardian hierarchical netlist comparator) delivers a number of significant advances. The engines of both tools were tuned up to achieve essential reduction of running time while processing huge designs.

Design Version Control System for Expert

The DVCS subsystem of CELEBRITY CAD suite provides significant improvement in management of complex designs, design reuse and teamwork management. The most important features of DVCS are the means for version tracking and team design coordination.

Hints, Tips, and Solutions February 2000

Q. When I simulate my process flow the simulated profile is always lower than the SRP measurements. What could be causing this? A. In many simulated process flows the surface oxide is etched completely off after which there may be some diffusion cycles.

Using Luminous to Model the Transient Response of a Silicon Charge Collection and Transfer Structure

The rapid evolution of modern photonic devices in digital photographic and detection systems creates a need for physically-based simulation of charge collection and transfer. In this article we show the linearity, spatial sensitivity, and spectral response of a generalized silicon pixel structure using the Luminous module of the ATLAS device simulator.

Calibrated and Predictive Simulation of Doping Profiles: Low Energy As, B and BF2 Ion Implantation

This article will present an efficient and original methodology for global and predictive modeling of low energy Boron, BF2 and Arsenic ion implantation, in the suitable range for sub-100nm CMOS technology.