The Need for Advanced Wide Bandgap Power Electronics

PowerAmerica’s strategic roadmap for next generation wide bandgap (WBG) power electronics (PE) came out earlier this year. The public version of the roadmap includes a background/introduction and market forecast pertaining to silicon carbide (SiC) and gallium nitride (GaN) PE. I learned a great deal about SiC & GaN PE in this roadmap and I have copied the relevant sections below.

3D TCAD Simulation for Power Devices

y first IC design back in 1978 was a DRAM and it ran on 12V, 5V and -5V, but then my second DRAM was using only a 5V supply. Today we see SOCs running under a 1V supply voltage, but there is a totally different market for power devices that are at the other end of the voltage spectrum and they handle switching ranges from 12V – 250V. To learn more about power devices and how the process and device modeling is done, I read a Silvaco publication entitled Advanced Process and Device 3D TCAD Simulation of Split-Gate Trench UMOSFET.

Where Circuit Simulation Model Files Come From

I started out my engineering career by doing transistor-level circuit design and we used a proprietary SPICE circuit simulator. One thing that I quickly realized was that the accuracy of my circuit simulations depended entirely on the model files and parasitics. Here we are 40 years later and the accuracy of SPICE circuit simulations still depend on the model files and parasitics, but with the added task of using 3D field solvers to get accurate parasitic values, and even the use of 3D TCAD tools to model the complex physics of nm IC designs using FinFET transistors.

230 Papers on Power Device Simulations using Silvaco TCAD

A quick search of the IEEE Xplore online library gives a list of more than 230 published technical articles on Power Device Simulation using Silvaco TCAD. Here are some recent papers with the authors’ abstracts that cover silicon-carbide (SiC) and Junction-Less Double Gate MOSFET devices. Any mention of ‘we’ or ‘our’ refers to the paper’s authors:

Advanced Materials and New Architectures for AI Applications

Over the past 50 years in our industry, there have been three invariant principles:Moore’s Law drives the pace of Si technology scaling system memory utilizes MOS devices (for SRAM and DRAM) computation relies upon the “von Neumann” architecture

Talking Atoms to Systems in Next-Generation SoC Designs

New system-on-chip (SoC) devices are driving new memory architectures and photonic interfaces, while specialized new intellectual property (IP) requires analysis down to the nanometer and atomic levels because of single nanometer process nodes. According to Babak Taheri, CTO and EVP of products at Silvaco, a leading EDA Software, semiconductor IP company, a member of SEMI and the ESD Alliance, a SEMI Strategic Association Partner, design technology co-optimization and proven IP are required for this analysis.

증강 현실 및 홀로그래피 적용을 위한 실리콘 픽셀의 액정 시뮬레이션 및 분석

2019년 7월 25일 | 3:00am-3:30am (한국 시각) Clever LCD를 이용하여 위상 전용 LCoS-SLM을 분석하는 방법을 소개하고, 픽셀 구동 및 픽셀 크기 축소 시에 발생하는 문제를 설명합니다.

실바코 TCAD 소개 및 기본 – 튜토리얼

2019년 5월 29일 | 3:00am-3:30am (한국 시각) Victory Process와 함께 TCAD 공정 시뮬레이션에 대해 논의합니다. 반도체 공정 시뮬레이션, 구조 설계 및 공정 에뮬레이션 등의 기본 사항에 대해 살펴봅니다.

실바코 TCAD 소개 및 기본 – 3부

2019년 5월 29일 | 3:00am-3:30am (한국 시각) Victory Process와 함께 TCAD 공정 시뮬레이션에 대해 논의합니다. 반도체 공정 시뮬레이션, 구조 설계 및 공정 에뮬레이션 등의 기본 사항에 대해 살펴봅니다.

Inventing the Future of MicroLED: Silvaco TCAD

Silvaco did Executive Video Interviews at our booth in the middle of the show floor at Display Week 2019 in San Jose. We interviewed industry experts on what they expected for the Display industry in 2019 and what technical challenges that needed to be met.