Noise Simulations
If the MOS model file has the parameters: noia, noib, noic, Af, Kf and nlev=0 will SmartSpice ignore the BSIM III noise parameters (noia, noib and noic)
저자는 아직 경력을 작성하지 않았습니다.
하지만, Erick Castellon 씨는 무려 768 항목에 기여한 것을 자랑스럽게 생각합니다.
If the MOS model file has the parameters: noia, noib, noic, Af, Kf and nlev=0 will SmartSpice ignore the BSIM III noise parameters (noia, noib and noic)
EDIF has been a vital part of the Electronic Design Automation (EDA) industry for many years and Gateway allows users to convert edif200 formatted files of other tools vendors into Gateway’s schematics and symbols.
Design of large scale chips requires precise knowledge of interconnect delays. However, detailed analysis of interconnects may quickly become computationally too expensive due to the distributed nature of the networks, and the large number of internal nodes extracted.
Single-Electron Transistors (SETs) [1][2] are attractive candidates for post-CMOS VLSI ICs. Accurate models are also required in order to efficiently design SET circuits and hybrid circuits
Hipex-NET is SILVACO’s powerfull hierarchical layout netlist extractor. Built-in extracting rules permit to make fast and accurate parameter extraction for basic set of devices as MOS, BJT, diode, capacitor and resistor. But these rules can’t descibe all devices features and parameters that appeare in new submicron or RF layout designs. To resolve this problem the new HIPEX-NET command HIPEX GENERIC_DEVICE has been introduced. This new HIPEX-NET feature gives to user the capability to extract not only additional parameters for standard devices but also custom defined devices with arbitrary set of parameters. This article describes the new HIPEX-NET command.
How can I become a more efficient user of Expert?
In this paper the electrostatic impact of Channel Hot Electron (CHE) injection in discrete-trap memories is quantitatively addressed. The dual bit behavior of the transfer characteristic during forward and reverse read of a written cell is thoroughly analysed with the help of an analytical model. Such model allows, for the first time, to estimate the effective charged portion of the discrete storage layer, L2, and the quantity of electrons, Q, injected in the trapping
This article presents a new approach to model the quantum confinement of carriers in MOSFET or heterostructure. SILVACO has already included in its device simulator ATLAS, a Schrödinger-Poisson solver and Density-Gradient model
The subject of how to use the EXTRACT statement in DeckBuild often arises. The EXTRACT statement is a very useful tool for analysing data and can be performed on both structure and log files.
In certain cases, most notably in modern bipolar and SiGe HBT structures, epitaxial steps are performed after the oxide isolation structures have been already created. Thus the initial surface prior to epitaxy may contain regions of crystalline silicon, polysilicon or insulators, usually silicon dioxide. In the case of LOCOS isolation, the surface is also non-planar. In such epitaxial cases, epitaxy can be divided into two general types:-
Silvaco uses cookies to improve your user experience and to provide you with content we believe will be of interest to you. Learn detailed information on Privacy Policy. By using this website, you consent to the use of our cookies.
Accept settingsSettingsWe may request cookies to be set on your device. We use cookies to let us know when you visit our websites, how you interact with us, to enrich your user experience, and to customize your relationship with our website.
Click on the different category headings to find out more. You can also change some of your preferences. Note that blocking some types of cookies may impact your experience on our websites and the services we are able to offer.
These cookies are strictly necessary to provide you with services available through our website and to use some of its features.
Because these cookies are strictly necessary to deliver the website, refuseing them will have impact how our site functions. You always can block or delete cookies by changing your browser settings and force blocking all cookies on this website. But this will always prompt you to accept/refuse cookies when revisiting our site.
We fully respect if you want to refuse cookies but to avoid asking you again and again kindly allow us to store a cookie for that. You are free to opt out any time or opt in for other cookies to get a better experience. If you refuse cookies we will remove all set cookies in our domain.
We provide you with a list of stored cookies on your computer in our domain so you can check what we stored. Due to security reasons we are not able to show or modify cookies from other domains. You can check these in your browser security settings.
These cookies collect information that is used either in aggregate form to help us understand how our website is being used or how effective our marketing campaigns are, or to help us customize our website and application for you in order to enhance your experience.
If you do not want that we track your visit to our site you can disable tracking in your browser here:
We also use different external services like Google Webfonts, Google Maps, and external Video providers. Since these providers may collect personal data like your IP address we allow you to block them here. Please be aware that this might heavily reduce the functionality and appearance of our site. Changes will take effect once you reload the page.
Google Webfont Settings:
Google Map Settings:
Google reCaptcha Settings:
Vimeo and Youtube video embeds:
The following cookies are also needed - You can choose if you want to allow them:
You can read about our cookies and privacy settings in detail on our Privacy Policy Page.
Privacy Policy