Silvaco technologists and research partners will be participating in the ESSDERC/ESSCIRC 2020 joint conference for solid-state devices and circuits. Tutorial #8, Ab-initio simulations supporting new materials & process developments, chaired by Denis Rideau (STMicroelectronics) and Philippe Blaise (Silvaco), includes a presentation by Dr. Tillmann Kubis of Purdue University. Dr. Kubis is working with Silvaco in the area of atomistic simulation. He will present on Atomistic Green’s functions: the beauty of self-energies.
https://silvaco.com/wp-content/uploads/2020/04/tcad_process_device-11.jpg500500Graham Bell/wp-content/uploads/2019/11/silvaco-logo.pngGraham Bell2020-09-02 17:59:252020-09-02 17:59:25Silvaco at Upcoming Solid-State Conferences – ESSDERC 2020 and SISPAD 2020
The Simulation Standard, Silvaco’s technical journal for semiconductor process and device engineers is beginning its 30th year of publication. The latest issue has just been released and it outlines a complete power device design flow using the Victory suite of TCAD simulation solutions – Victory Process, Victory Mesh, and Victory Device.
https://silvaco.com/wp-content/uploads/2020/04/tcad_process_device-11.jpg500500Ingrid Schwarz/wp-content/uploads/2019/11/silvaco-logo.pngIngrid Schwarz2020-03-30 14:50:352021-08-04 22:21:49Accelerating Design with the Victory TCAD Suite
The market for cellular components has been shifting rapidly from GaAs pHEMT or silicon-on-sapphire (SOS) to silicon-based technology. CMOS (silicon-on-insulator) SOI antenna switches which are compatible with multimode GSM/EDGE, TD/WCDMA, and LTE systems exhibit higher integration levels and have become the fastest growing mobile phone submarket. CMOS-SOI processes, especially with thin silicon, have the potential to rival the FoM that was traditionally feasible only with GaAs technologies.
https://silvaco.com/wp-content/uploads/2020/02/tcad_process_device.jpg500500Graham Bell/wp-content/uploads/2019/11/silvaco-logo.pngGraham Bell2020-03-02 23:01:412021-08-04 22:22:23TCAD Simulations of RF-SOI Switches with Trap-Rich Substrate
As process nodes continue to shrink, the requirement for additional physics-based simulation is gradually creeping into each stage of the design process. By way of illustration, Technology Computer Aided Design (TCAD) simulations are becoming more atomistic in nature, SPICE models are becoming process aware to take account of localized strain effects, and back or middle end of line (BEOL or MEOL) parasitics are moving from exclusively two-dimensional (2D) rule-based solutions to full 3D structure field solvers for numerous critical sections of the layout.
https://silvaco.com/wp-content/uploads/2020/04/tcad_process_device-11.jpg500500Ingrid Schwarz/wp-content/uploads/2019/11/silvaco-logo.pngIngrid Schwarz2020-01-07 15:26:012021-08-04 22:30:19For Next Generation Nanowires, Simulation from Atoms to SPICE
IEDM is THE device conference with more than a thousand participants from major companies and R&D institutes. Many talks were dedicated to new memory devices and circuits, including Ferroelectrics, MRAM, RRAM, driven by the requirements of AI processing. EUV is definitely there for 3nm and beyond. 3D integration was shown for LP-HP logic and RF. Gate-All-Around devices, with nanowires or nanosheets are mature versus FinFET.
https://silvaco.com/wp-content/uploads/2020/02/tcad_process_device.jpg500500Erick Castellon/wp-content/uploads/2019/11/silvaco-logo.pngErick Castellon2019-12-18 19:26:552021-08-04 22:30:43Atomistic Analysis and Next Generation Computing at IEDM 2019
The IEEE International Electron Devices Meeting (IEDM) is the world’s preeminent forum for reporting technological breakthroughs in the areas of semiconductor and electronic device technology, design, manufacturing, physics, and modeling. It is the flagship conference forNanometer-scale CMOS transistor technology, advanced memory, displays, sensors, MEMS devices
Novel quantum and nano-scale devices and phenomenology
Optoelectronics, devices for power and energy harvesting, high-speed devices
Process technology and device modeling and simulation
https://silvaco.com/wp-content/uploads/2020/02/tcad_process_device.jpg500500Erick Castellon/wp-content/uploads/2019/11/silvaco-logo.pngErick Castellon2019-11-19 00:00:052021-08-04 22:33:40Silvaco Exhibits and Presents Invited Paper on Atomistic Simulation at IEDM 2019
The power electronics (PE) market is growing rapidly, driven by the accelerating demand of EV and HEV vehicles. Power devices lend themselves to design and manufacturing innovations at the transistor-level to improve device performance and reduce development and production costs. Silicon-carbide (SiC), gallium-nitride (GaN), and other wide bandgap materials have started to replace silicon in high-voltage power devices.
https://silvaco.com/wp-content/uploads/2020/04/tcad_process_device-11.jpg500500Ingrid Schwarz/wp-content/uploads/2019/11/silvaco-logo.pngIngrid Schwarz2019-10-25 16:13:232021-08-04 22:34:09How TCAD Can Optimize Power Electronics
PowerAmerica’s strategic roadmap for next generation wide bandgap (WBG) power electronics (PE) came out earlier this year. The public version of the roadmap includes a background/introduction and market forecast pertaining to silicon carbide (SiC) and gallium nitride (GaN) PE. I learned a great deal about SiC & GaN PE in this roadmap and I have copied the relevant sections below.
https://silvaco.com/wp-content/uploads/2020/04/tcad_process_device-11.jpg500500Ingrid Schwarz/wp-content/uploads/2019/11/silvaco-logo.pngIngrid Schwarz2019-09-09 16:29:522021-08-04 22:39:54The Need for Advanced Wide Bandgap Power Electronics
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