HINTS & TIPS – March 1998
Q: Is it possible to perform a DRC check on portions rather than on the whole circuit useful when only 2 or 3 errors to fix ?
저자는 아직 경력을 작성하지 않았습니다.
하지만, Ingrid Schwarz 씨는 무려 1528 항목에 기여한 것을 자랑스럽게 생각합니다.
Q: Is it possible to perform a DRC check on portions rather than on the whole circuit useful when only 2 or 3 errors to fix ?
Recent additions to the ATLAS device simulation framework have added the ability to simulate 3D electrothermal effects in Giga3D and mixed circuit simulation with 3D device simulation in MixedMode3D. The new modules add to the existing 3D device simulation within ATLAS as shown in Figure 1.
With mounting concern for energy conservation and nature preservation, power electronics is becoming increasingly dominant in everyday life.
It is usually assumed that the poly gate in a MOSFET is doped at a concentration such that depletion in the gate either does not occur or that any depletion effects can safely be ignored. This article aims to quantify poly depletion effects for typical sub-micron device dimensions using ATHENA and ATLAS process and device simulators.
Mesh control in process simulators is one of the major issues tackled by any user. Over the years the meshing algorithms with SSuprem4 and ATHENA have been improved to the stage where most arbitrary structures can be solved. New approaches such as automated ADAPTIVEMESH algorithms or standalone programs such as DevEdit exist to help users.
Q: How can external tools be run inside of Silvaco’s run-time environment DeckBuild? Is it possible to include UNIX commands along with simulator syntax inside an input file?
The SmartSpice interface to the Cadence Design Framework II has been substantially improved in its latest release (version 1.0.8.R), following feedback from a number of existing users.
Taveren Technology, Inc., a startup company based in Austin, Texas is busy developing the next generation performance characterization tool suite.
SmartSpice provides many unique and powerful features to facilitate parametric analysis in general and cell characterization in particular.
The BSIM3v3.1 SPICE model has become an industry standard for modeling deep-submicron MOS technologies. The model is suitable for both digital and analog applications because of the better modeling of the output conductances and the physics based scaling which is embedded in the model equations.
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