• Simulation Standard Technical Journal

Simulation Standard Technical Journal

A Journal for Process and Device Engineers

Introduction to Virtual Metrology with Victory Extract

Victory Extract is a new tool for the 2024 baseline release. Victory Extract unifies the older extraction offerings from DeckBuild (extract), Victory Process (extract3d) and Victory Mesh (extract3d) and introduces some newer metrology features.

IGBT Switching Simulation Based on the Double-Pulse Method

This article introduces a DPT-based simulation method to perform the transient switching characteristics of an IGBT device. It also provides standard templates for power device switching characteristics and performance assessment using Silvaco TCAD simulation tools. The deck used for this article can be found in Silicon_Power_ex17 of the 2024 Baseline.
Sim Std Aug 2024

2024 TCAD Baseline Release

  • Section 1: Process Simulation – New Features in 2024 Baseline Release
  • Section 2: Device Simulation – New Features in 2024 Baseline Release
  • Section 3: Victory DoE – New Features in 2024 Baseline Release

How Can I Re-Use Individual Monte-Carlo 3D Implant Profiles?

It is often the case that a design of experiments (DOE) is required to optimize the performance of a particular device.  Sometimes this simply means tweaking the implant dose for threshold voltage or other minor adjustments, but in other cases it can mean tweaking such things as high energy deep well implants.

Comparison of Models for Fluorine Effect on Dopant Diffusion in CMOS Processes

Recently a new diffusion model was introduced to Victory Process: the CMOS model. This model aims at taking on the challenges brought by the specificities of CMOS device processing such as steep temperature ramps, short annealings or shallow implantations.
SS April 2023

Setting up the Wafer Orientation: Applications to Ion Implantation

Properly setting the wafer orientation in Victory Process (VP) is critical for various processes such as ion implantation, etching, and deposition. For ion implantation in particular, the determination of the wafer orientation becomes crucial, given its profound impact on profile variations in channeling and non-channeling directions.