エントリー - Ingrid Schwarz

半導体IPコミュニティ、IPトレードショー・カンファレンスを開催へ

米国カリフォルニア州サンタクララ発 ― 2016年9月14日 -これまで半導体の知的財産(IP)コミュニティが望んでいながら実現できていなかった、アイデアの交換、ネットワークの構築、IPの購入側に供給側から詳細情報を提供するといったイベントをコミュニティの各企業が協力し、REUSE 2016として開催します。この新たな年次イベントであるトレードショー・カンファレンスは2016年12月1日、カリフォルニア州マウンテンビューのコンピューター歴史博物館で初回開催されます。

Simulation of Device Degradation Due to Bias Temperature Stress

Introduction Bias Temperature Instability (BTI) [1] ranks among the most serious reliability issues in present-day semiconductor devices. In pMOSFETs, for instance, it is observed when large negative biases are applied to the gate at elevated temperatures. These operation conditions cause a shift of the threshold voltage, resulting in an unwanted change of the device characteristics. With the continuous miniaturization of MOS devices, this phenomenon has become increasingly pronounced and has reached a level, at which it can even lead to device failure in the worst case.

Using Victory Process to Create Realistic Structures for Capacitance Extraction in Clever

Silvaco offers many alternatives for creating simple 3D structures, the optimum choice depending on what the user needs to simulate. Many of the choices for creating simple 3D structures are for user convenience, so that just a single tool can both create the simple 3D structure and simulate the required physics. This gives the user an enhanced feeling of a tightly integrated product.

Hints, Tips and Solutions – Scattering mechanisms contributing to reduced channel mobility in 4H-SiC MOSFETs

In a MOSFET structure, silicon carbide, 4H-SiC in particular, is known to exhibit lower channel mobility than Si, mainly due to Coulomb scattering at trapped charge at the SiO2/4H-SiC interface, where a high interface trap density exists. Atlas provides an alternative inversion layer mobility model specifically intended for 4H-SiC. The model enabled by specifying the ALTCVT.N parameter for electrons or the ALTCVT.P parameter for holes on the MOBILITY statement takes into account four scattering mechanisms. These comprise the ionized impurity scattering in the bulk semiconductor, the surface roughness scattering, the acoustic surface phonon scattering, and the Coulomb scattering at trapped charge at the SiO2/4H-SiC interface. Using Matthiessen’s rule, the ALTCVT.N and ALTCVT.P model combines four mobility components related to their respective carrier scattering to form the total inversion layer mobility in 4H-SiC.