Analysis of Light Power Dependence on the Leakage Current in a Buried Hetero- Structure p-InP Semiconductor Laser

Introduction

The buried heterostructure (BH) semiconductor laser finds favour in optical transmission systems due to its stable transverse mode property. Investigations into BH structure lasers have been per-formed [1] including use of a blocking current [2] in order to realize an optimized structure design. An effective device structure for reducing leakage current in BH laser diodes with semiin-sulation doped Fe in InP blocking layers has been analyzed [3].

In this study, the leakage current and light output power as a function of the leakage current path is examined. The blocking region used follows p-n-p-n structure.

At the threshold current, the BH laser with a 0.3um leakage path, the quantum efficiency is over 20%. For higher injection currents, the leakage current increases and the light power will become saturated.