Calibrated and Predictive Simulation of Doping Profiles: Low Energy As, B and BF2 Ion Implantation

This article will present an efficient and original methodology for global and predictive modeling of low energy Boron, BF2 and Arsenic ion implantation, in the suitable range for sub-100nm CMOS technology.

The International Technology Roadmap for Semiconductors (ed. 1999) underlines the need for development of analytical models for ion implantation simulations, supported by Monte Carlo code. These models become more and more complex, from the simple Gaussian approximations to the latest double Pearson-4 distributions [1], or Legendre polynomials fitting [2].