MixedMode Simulation of Power Electronic Converters
With mounting concern for energy conservation and nature preservation, power electronics is becoming increasingly dominant in everyday life.
エントリー - Ingrid Schwarz
Polysilicon Gate Depletion Effects in Sub-Micron MOSFETs
It is usually assumed that the poly gate in a MOSFET is doped at a concentration such that depletion in the gate either does not occur or that any depletion effects can safely be ignored. This article aims to quantify poly depletion effects for typical sub-micron device dimensions using ATHENA and ATLAS process and device simulators.
Mesh Control in ATHENA Avoiding Problems and What to do If they Occur
Mesh control in process simulators is one of the major issues tackled by any user. Over the years the meshing algorithms with SSuprem4 and ATHENA have been improved to the stage where most arbitrary structures can be solved. New approaches such as automated ADAPTIVEMESH algorithms or standalone programs such as DevEdit exist to help users.
HINTS & TIPS – February 1998
Q: How can external tools be run inside of Silvaco’s run-time environment DeckBuild? Is it possible to include UNIX commands along with simulator syntax inside an input file?
The SmartSpice Interface to Cadence (revisited)
The SmartSpice interface to the Cadence Design Framework II has been substantially improved in its latest release (version 1.0.8.R), following feedback from a number of existing users.
CellRATER from Taveren Technology fast, Accurate Cell Library Characterization for Deep Submicron Timing Flow Improvement
Taveren Technology, Inc., a startup company based in Austin, Texas is busy developing the next generation performance characterization tool suite.
Cell Characterization with .MODIF Statement in SmartSpice
SmartSpice provides many unique and powerful features to facilitate parametric analysis in general and cell characterization in particular.
Local Optimization Templates for Extracting BSIM3v3.1 Parameters in UTMOST III
The BSIM3v3.1 SPICE model has become an industry standard for modeling deep-submicron MOS technologies. The model is suitable for both digital and analog applications because of the better modeling of the output conductances and the physics based scaling which is embedded in the model equations.
Hints, Tips, and Solutions – January 1998
Q: What is typical measurement set-up for the S3245A Noise Amplifier and what measurement equipment is used?
A: Typical Measurement Set-Up