Ever decreasing minimum geometries in MOSFET design results in a corresponding reduction in the thickness of the gate oxide. This is an inevitable result of the increasing doping levels in the channel that are required to prevent depletion from the drain becoming too high a percentage of the total device length. For these new aggressive technologies, the required ultra thin gate oxides suffer a significant oxide tunnelling component. It has therefore become important to include this component in device modelling.

SOI technology for state of the art CMOS technology is rapidly approaching maturity. PD-SOI device design has the advantage of easier manufacturing but requires more sophisticated device and circuit design to reduce the effects of the floating-body. FD-SOI device design potentially has the advantage of no floating-body effects but requires very thin silicon films making manufacturing more challenging. As a consequence the optimization of SOI device design requires a coupled solution where both process and circuit simulation can be tied together. Silvaco provides a complete, well integrated simulation software for all aspects of SOI technology. Our SOI specific software includes technology simulation, SPICE model extraction, interconnect parasitic analysis, SPICE circuit simulation and traditional CAD. The TCAD Driven CAD approach provides the most accurate models for both device engineers and circuit designers.

New improvements have been added to Shur models. These enhancements include a self-heating effect and a new charge conservative model.

Q: How can I cut exactly the same hole in many layers? A: There are at least two ways to do this. (1) You may use the command Tools>>Cut by Line as follows.

A: Modeling of the increase in breakdown voltage at elevated temperatures requires a model to describe the temperature dependence of the impact ionization coefficients. In ATLAS there are two impact ionization models that include lattice temperature dependence. They are the Crowell-Sze model[1] called using the command IMPACT CROWELL and the Selberrherr Model[2] called using the command IMPACT SELB.