Low Voltage Super Junction MOSFET Simulation and Experimentation

Introduction

The application of Super Junction concepts to a low voltage power MOSFET is investigated. The body junction is modified with the addition of a high energy implant, resulting in an increased breakdown voltage. Simulations are used to quantify the relationship between dose and breakdown voltage, resulting in a predicted 35% Rds(on) reduction. This is confirmed through experiment, and a 19% reduction in Rds(on) is reported at 75 V. No change in device reliability is observed. This approach provides a simple means to reduce the on resistance of low voltage MOSFETs.