Evaluating of the Breakdown Voltage of the Super-Junctions Using ATLAS

Introduction

High Voltage Power Devices using super junction or multi RESURF effect have a relatively high BV with a drastic reduction in the on-state resistance (Ron)^[1-2]. Several Techniques such as buried multi-epitaxial growth^[3], Super Trench Power MOSFET process^[4], Vapor Phase Doping^[5] and trench filling epitaxial Si growth^[6], have been applied to formation of the high aspect ratio p/n column structures. In blocking mode, the adjacent N- and P- regions deplete into each other laterally. For this junction, the process simulation was considered with several implant ionization process steps^[3]. The condition of exact charge balance is important in obtaining the stable high Breakdown Voltage (BV).

In this paper, we compare a simple PiN junction, trench junction and super junction type diode that depends on the drift region doping concentration. We shall show the effect of charge imbalance in the SJ structure and in the SJ Diodes .