ATLAS Field Dependent Mobility: Model Parameters for (0001) 6H-SiC and (0001) 4H-SiC

Introduction

For high temperature, high power applications Silicon Carbide (SiC) continues to be a useful material for device fabrication because of its wide band gap, high breakdown field, and high thermal conductivity [1]. Some common power devices utilizing SiC include the following: Schottky and p-n junction diodes, thyristors, and UMOSFETs. Recent research has further contributed to the characterization of the electrical transport properties of 6H-SiC and 4H-SiC [2].

Model parameters reported in [2] are used in the standard field-dependent mobility model in ATLAS, and the velocity-field characteristics for 6H-SiC and 4H-SiC are simulated for several temperatures. A UMOSFET device simulation example is created with ATLAS, and the reported model parameters for 4H-SiC at 23  C are used to simulate the drain characteristics for several gate voltages.