• 技术刊物 Simulation Standard

Simulation Standard

Silvaco面向半导体工艺和器件仿真工程师推出的技术刊物

TCAD Simulation of a SONOS Device with Silvaco’s new FNONOS Model

IntroductionErasable programmable read-only memory (EPROM) devices include amongst others, floating gate technology and SONOS (Polysilicon-Oxide-Nitride-Silicon) technology. Floating gate technology involves charge being stored in the polysilicon floating gate as a continuous spatial distribution of free carriers in the conduction band. In contrast, SONOS gate stack structures involve charge being stored in spatially isolated deep level traps within the nitride layer.

How to obtain a stable grid and smooth doping profile in non-planar a-Si TFT using Athena/Elite?

How to obtain a stable grid and smooth doping profile in non-planar a-Si TFT using Athena/Elite?

Three Dimensional Electro-Thermodynamic Analysis for GaN Light Emitting Diodes

AbstractImprovement in temperature characteristics of GaN LEDs is important for realizing reliable devices operating at high temperatures. In this article, the thermal characteristics of GaN LEDs have been analyzed by using the ATLAS three dimensional thermal conduction model and thermal heat model. Maximum operation temperature has also been calculated. It was shown that the distribution of lattice temperature using the conventional structure.

Accurate Spice Netlist Extraction in Stellar Using New Substrate Partition Feature

IntroductionBy default STELLAR calculates the capacitances between interconnect lines and the whole substrate. In certain conditions it may lead to some inaccuracies. For example STELLAR may calculate the capacitance of a poly line over an active area but this capacitance is already present in the spice compact model (Cox). Another example is that the substrate of a MOSFET transistor is usually connected to Vdd or Gnd depending on its polarity.

Atlas Device Simulation of Amorphous Oxide Semiconductor Thin-Film Transistors

1. IntroductionAmorphous oxide semiconductor materials have attracted much attention as key components of TFTs for flexible electronics [1]. The advantages of such materials include flexibility and transparency which are compatible with plastic substrates, and higher mobilities than those of amorphous-Si and organic semiconductor TFT materials.

Simulating the Source of Polarization Charge in AlGaN/GaN HFETs

Polarization-induced charges at the AlGaN/GaN interface of heterojunction field-effect transistors (HFETs) create a high density, two-dimensional electron gas (2DEG) in the channel. One approach to simulating the 2DEG is to place a fixed positive charge at the AlGaN/GaN interface, thus attracting a fixed quantity of electrons to the channel. Silvaco’s ATLAS software can do this with either an INTERFACE statement or automatically with the use of the POLARIZATION parameter on the REGION statement. This is fine, as far as it goes, but this simple approach glosses over some nuances having to do with the source of carriers in the channel. A paper by Ibbetson, et al.,[1] explored this question theoretically and experimentally.