• 技术刊物 Simulation Standard

Simulation Standard

Silvaco面向半导体工艺和器件仿真工程师推出的技术刊物

Generic Devices – The New HIPEX-NET Feature for Extraction of Custom Devices

Hipex-NET is SILVACO’s powerfull hierarchical layout netlist extractor. Built-in extracting rules permit to make fast and accurate parameter extraction for basic set of devices as MOS, BJT, diode, capacitor and resistor. But these rules can’t descibe all devices features and parameters that appeare in new submicron or RF layout designs. To resolve this problem the new HIPEX-NET command HIPEX GENERIC_DEVICE has been introduced. This new HIPEX-NET feature gives to user the capability to extract not only additional parameters for standard devices but also custom defined devices with arbitrary set of parameters. This article describes the new HIPEX-NET command.

How can I become a more efficient user of Expert?

How can I become a more efficient user of Expert?

Electrostatic Effect of Localized Charge in Dual Bit Memory Cells with DiscreteTraps

In this paper the electrostatic impact of Channel Hot Electron (CHE) injection in discrete-trap memories is quantitatively addressed. The dual bit behavior of the transfer characteristic during forward and reverse read of a written cell is thoroughly analysed with the help of an analytical model. Such model allows, for the first time, to estimate the effective charged portion of the discrete storage layer, L2, and the quantity of electrons, Q, injected in the trapping

A New Efficient Quantum Method: The Bohm Quantum Potential Model

This article presents a new approach to model the quantum confinement of carriers in MOSFET or heterostructure. SILVACO has already included in its device simulator ATLAS, a Schrödinger-Poisson solver and Density-Gradient model

The subject of how to use the EXTRACT statement in DeckBuild often arises

The subject of how to use the EXTRACT statement in DeckBuild often arises. The EXTRACT statement is a very useful tool for analysing data and can be performed on both structure and log files.

Simulating Selective and Non-Selective Epitaxy over Oxide Isolated Regions Using Athena

In certain cases, most notably in modern bipolar and SiGe HBT structures, epitaxial steps are performed after the oxide isolation structures have been already created. Thus the initial surface prior to epitaxy may contain regions of crystalline silicon, polysilicon or insulators, usually silicon dioxide. In the case of LOCOS isolation, the surface is also non-planar. In such epitaxial cases, epitaxy can be divided into two general types:-