• 技术刊物 Simulation Standard

Simulation Standard

Silvaco面向半导体工艺和器件仿真工程师推出的技术刊物

Simulation of Stresses and Mobility Enhancement Factors in 3D Inverter Cell

The analysis and characterization of stress effects have become an integral part of semiconductor technology and device design. In a typical semiconductor process flow the stresses are generated primarily due to volume expansion or contraction of the adjacent materials during temperature variations. Stresses could also be generated during oxidation, silicidation, etching, and deposition processes or due to lattice expansion or contraction after introducing large doses of dopants. Simulation of process induced stresses is an important component of traditional TCAD analysis since these stresses could have adverse or positive effect on individual process steps or on final device characteristics.

High Light Extraction on OLED with Microcavity Effects

OLEDs have been researched for application in display devices due to their considerable advantages. In order to further improve and optimize devices for practical applications, the electrical and optical parts have to be considered.

Modelling of GaN/InGaN Tricolour Multiple Quantum Well Light Emitting Diodes

Since lighting is estimated to account for 20% of the world’s electricity consumption, the search for reliable and efficient lighting technologies to replace incandescent and fluorescent modules is intense.

InGaN/GaN Ridge Type with MQW Laser Diode Simulation Using ATLAS

The light source on short wavelenghts has been researched in GaN-based lser diodes (LDs). For high efficiency emitting devices, the wave-guide layer has been investigated to obtain more stable far field patterns and the multi-quantum well layers have been researched as a means of acheiving high quantum efficiency in blue-violet lasers.

Using VICTORY Process to Model Thermal Oxidation of Silicon in O2/HCl Mixtures

The addition of a chlorine species during thermal oxidation of silicon results in improved threshold stability, higher and more uniform oxide dielectric strength and improved junction properties due to lower leakage [1-3]. The effect of HCl addition is to increase the oxidation rate relative to the oxidation rate in dry oxidation ambient (O2), whilst no influence of HCL on the oxidation rate is seen for wet oxidation ambient (H20). The observed increase in oxidation rate is due to:

Thermal Optimization on GaN HFET Using Flip Chip and Through Wafer via Structures

GaN heterojunction field effect transistors (HFETs) have been under extensive investigation because of their projected superb performances as high-power RF devices. The inherently high breakdown field arising from the wide bandgap guarantees not only the high power input/output characteristics but also extreme device shrinkage which is a huge advantage for increasing the highest operation frequency. Two-dimensional electron gas (2-DEG) with the charge density ten times higher than that of GaAs-based HFET and the mobility well exceeding Si enables a very low on-state resistance indispensable to RF devices. Although the superiority of the device characteristics has been demonstrated, the self heating effect has hindered the production of high power and high speed GaN-based switching devices. This effect can be significantly reduced by the cost effective heat-sink approach (Flip chip or through wafer via)[1,2].