• 技术刊物 Simulation Standard

Simulation Standard

Silvaco面向半导体工艺和器件仿真工程师推出的技术刊物

Channel-length Dependence of a-IGZO TFTs with Self-heating Effects

IntroductionAmorphous In-Ga-Zn-O thin-film transistors (a-IGZO TFTs) show a high mobility, a small sub-threshold swing, and a low OFF-current, and they are considered to be one of the most promising TFT for new flat-panel displays (FPDs). The high mobility originates from the unique electron transport in a-IGZO. The transport properties are different from those in conventional semiconductor materials like Si, for example, the mobility increases with increase of the electron concentration and/or temperature. Therefore, the new mobility model for a-IGZO is necessary. In addition, as pixel sizes in the FPDs decreases, a channel-length, L, of a-IGZO TFTs becomes shorter. It indicates that it is important to understand the operation of short-channel a-IGZO TFTs.

Simulation of Different Tunnel Junctions in InGaP/GaAs, InGaP/CdTe Dual Junction Solar Cells

Abstract — Dual junction solar cells were simulated using Silvaco TCAD tool with various tunnel junction material compositions. InGaP/GaAs dual junction solar cells were simulated with 10 different tunnel junction combinations. The highest efficiencies were from InGaP/AlGaAs and InGaP/InGaP tunnel junctions at 31.82% and 31.75%. InGaP/CdTe solar cells were also simulated with four different tunnel junction combinations. InGaP/InGaP tunnel junction was found to be most efficient with 37.29% which is consistent with experimental data. Three of four InGaP/CdTe dual junction solar cells were simulated to have higher efficiency values than all InGaP/GaAs solar cells.

Hints, Tips and Solutions – July, August, September 2019

Q. Is it possible to emulate a deep reactive ion etch process (e.g. deep trench with scalloped sidewalls) without using a physical based process simulation, such as Victory Process?To study a non-ideal geometry and its impact on device performance, TCAD device engineers may want to generate structures with complex geometries quickly, without the added details of physically-based process simulation.

Process Simulation – New Features in 2019 Baseline Release

2019 baseline release of Victory Process includes improvements and extensions to the following modules:Physical etching/deposition Stress simulation Annealing/oxidation

Meshing – New Features in 2019 Baseline Release

The 2019 TCAD baseline release of Victory Mesh now contains Solid Modeling functionality. The term Solid Modeling is used to refer to a methodology that generates or manipulates a device via geometrical operations, for example, bending, mirroring and joining or insertion.

Device Simulation – New Features in 2019 Baseline Release

The effect of Coulomb interaction in the absorption spectrum of quantum wells (QWs) is responsible for the quantum confined Stark effect (QCSE), which is the physical mechanism underlying the operation of electro-absorption modulators [1]. A new model has been added to Atlas to simulate QCSE in QWs and can be enabled with the following command (the qwell model must also be activated):