• Simulation Standard Technical Journal

Simulation Standard Technical Journal

A Journal for Process and Device Engineers

Obtaining Spectral Sweeps from 3D Plasmonic Structures

In the simulation standard article, “Plasmonic Light Trapping Transforming Thin-Film Photovoltaics” from 2015, the finite difference time domain (FDTD) algorithm was used in 2D to propagate the light in thin film photovoltaic structures with and without metallic nanoparticles to simulate its plasmonic effect. The solid modeling module of Victory Mesh offers the capability to model such structures in 3D.

Optimizing a 2um, 1,500 Volt SiC Superjunction Trench-MOS Device Using TCAD

In this paper the critical design features of a SiC superjunction trench MOS device were optimized using CAD to obtain a high breakdown voltage while minimizing any unnecessary increase in channel resistance.

TCAD Simulation of CBRAM Devices

Conductive Bridge Random Access Memory (CBRAM) is a non-volatile memory device technology that can operate by consuming very low power. Another advantage of the CBRAM devices is its ability to be easily integrated into conventional back-end-of-line CMOS processes [1].

TCAD Mixed-Mode Simulation for GaN Power HEMTs in Unclamped Inductive Switching

The qualification of GaN power high-electron-mobilitytransistors (HEMTs) must consider the device ruggedness against out-of-SOA (safe operating area) events [1- 3].

Using Victory Process Open Model Interface to Customize Etch Emulation Model – Example

Dry etching is commonly used in semiconductor processing to generate deep trenches with good anisotropy. Dry etching is applied to many semiconductor technologies including Advanced FinFETs, 3D NAND, and vertical Silicon and Silicon Carbide power devices.

2020 TCAD Baseline Release Section 1: Process Simulation – New Features in 2020 Baseline Release

2020 TCAD Baseline Release Section 1: Process Simulation – New Features in 2020 Baseline Release