• 技术刊物 Simulation Standard

Simulation Standard

Silvaco面向半导体工艺和器件仿真工程师推出的技术刊物

Hints, Tips, and Solutions – Types of 3D Delaunay Shape Refinement in Victory Process

The Victory Process cell mode Delaunay 3D device meshing algorithm already includes various TCAD-based local refinement algorithms to ensure accurate and robust device simulation. These include junction and interface distance refinement. One benefit of these approaches is that complex refinement behavior can be specified via a simple deck interface, but a limitation is that the results can only vary according to the small number of parameters of the schemes. In some cases, such as particle path refinement, it can be useful to have finer, more local control over the mesh and the shape distance refinement schemes have been produced to support this.

Hints, Tips and Solutions – Meshing a Non Axis Aligned SEU Beam

Q: I have an SEU beam in a 2D structure; the beam track is at an angle through the device. I don’t want to waste mesh by putting a fine mesh everywhere, is there anyway to mesh along the SEU beam track?A: Yes, and it is quite simple to do using DevEdit’s robust feature rich meshing engine.

Hints, Tips, and Solutions – Calculate Light Extraction Efficiency in an OLED or LED with Pure Optical Simulation

Calculation of light extraction efficiency or optical output coupling efficiency is often needed in simulating a light emitting device (LED) such as an organic LED (OLED). It is best to perform these calculations without running electrical simulation in the device, as parameters for new materials are hard to obtain and generally unnecessary in calculating light extraction efficiency. Moreover, a pure optical simulation will save simulation time and avoid any potential un-convergence in the electrical simulation.

Hints, Tips, and Solutions – Achieve Publication Quality Plots Using TonyPlot

Yes, TonyPlot has many various display and preference settings that users can adjust, transforming their simulation data into a high quality plot for use in publications.

Simulations of Deep-Level Transient Spectroscopy for 4H-SiC

Silicon carbide is expected to be an excellent device material as high voltage and low-loss power devices. Recently, SBD (Schottky Barrier Diode) and MOSFET based on silicon carbide have been realized [1-3], however, those devices have some problems for its reliability and control of the IV characteristics. The problems are related to defects in the bulk and at the interface of insulator/semiconductor. The concentration (~5e12[/cm3]) of the defects is 2 orders higher than that of silicon [4], and so the defects cause degradation of device characteristics. The investigation of the defect property is important for the improvement of the device performance.

Generally Applicable Degradation Model for Silicon MOS Devices

The main cause of operational degradation in MOS devices is believed to be due to the buildup of charge at the Silicon-Oxide interface. This leads to reduced saturation currents and threshold voltage shifts in MOSFET devices. Physics-based models of the degradation process typically consider the breaking of Si-H bonds (depassivation) at the Silicon-Oxide interface to be the main cause of the operational degradation. A new general model of Si-H bond breaking has recently been included in Atlas, adding to the Silvaco TCAD portfolio of degradation models[1].