• Simulation Standard Technical Journal

Simulation Standard Technical Journal

A Journal for Process and Device Engineers

Can Atlas be used to simulate advanced III-V or II-VI materials?

 Yes. ATLAS now supports a wide range of materials in its database. This database covers single element conductors, binary compounds and quaternary compounds. A complete list of all materials can be found in Appendix B of the ATLAS Users Manual Vol. II.

Modeling and Parameter Extraction Technique for HV MOS Devices with BSIM3v3

In this paper, I have used the same technique to model uni-directional HV MOS devices as previously reported for bi-directional HV MOS devices [4] -[5] while adopting a new parameter extraction technique. With the new uni-directional HV MOS modeling technique, the simulated I-V characteristics of the uni-directional n-channel HV MOS device match the measured characteristics well, which confirms its effectiveness.

New RF MOSFET Small Signal SPICE Model – Part 2

RF MOSFET Small - Signal Model and Parameters Small-signal equivalent circuit of MOSFET after de-embedding parasitics is shown in Figure 1 and small-signal model parameters are listed in Table 1. Parameter extraction is performed from real and imaginary parts of the Y-parameters. Each parameter is extracted from the Y-parameter equations which contain frequency terms.

UFSOI: Process-Based Compact SOI MOSFET Models

SOI technology appears now to have become an advantageous, viable option for low-voltage and high-performance CMOS integrated circuits in digital, analog, and mixed-signal applications. The thin-film nature of the SOI MOSFET, however, can underlie physical mechanisms that complicate circuit simulation and portend equivocation in design. Consequently, Silvaco has incorporated the physical process-based UFSOI MOSFET models into SmartSpice and Utmost.

Hints, Tips, and Solutions June 2000

Q: To simplify netlist extraction, I specify one kind of diffusion resistors in my layout by means of a special resistor definition layer. To my surprise, the extracted value for one such resistor always exactly twice the value I expected, no matter how I stretch this resistor.

Parametric-Cells Implementation in Expert

A parameterized cell (P-Cell) is a cell with user-specified parameters. It is possible to create customized p-cell instances with different composition according to parameter values. Using P-Cells gives a considerable memory reduction in the case of multiple instancing of a cell.