• Simulation Standard Technical Journal

Simulation Standard Technical Journal

A Journal for Process and Device Engineers

Expert: Layout Versus Layout (LVL) Comparison

IntroductionThe functionality Silvaco’s Layou Editor, Expert, has recently been expanded with the new feature called Layout Versus Layout comparison (LVL).LVL is available as a separate window called by menu commands:

New Parasitic Capacitance Modeling in Hipex-C

In deep submicron technology, conduction layers have widths much smaller than their thicknesses (see Figure 1). This makes edge parasitic capacitance effects more dominant than plate capacitance.In a multi-body system, neighboring conductors may capture some or all of the electrical fields lines emanating from a particular conductor. These field lines would otherwise terminate else where. This phenomenon is called charge sharing, which plays an important role in modeling parasitic capacitances.

Capacitance Coupling Calculation of IPS mode TFT-LCD Using Clever

The increasing demand of the TFT-LCD industry has lead to a rapid growth in display size and resolution. The higher cell packing density results in a narrowing viewing angle and image degradation due to electrical coupling between the data bus lines and display electrodes. This “crosstalk” therefore becomes a serious limitation. The in-plane switching(IPS) mode has been used as an excellent technology solution for realizing extremely wide viewing angles.

Can Athena get the STRESS in Compound Advanced material?

Q: Can ATHENA get the STRESS in Compound Advanced material?A: The ATHENA STRESS command has been augmented to allow the 2 Dimensional stress distribution. To get the STRESS, the simple SiO2/GaAs/AlGaAs Optical waveguide was considered.

Simulating Selective and Non-Selective Epitaxy Over Oxide Isolated Regions Using Athena

In certain cases, most notably in modern bipolar and SiGe HBT structures, epitaxial steps are performed after the oxide isolation structures have been already created. Thus the initial surface prior to epitaxy may contain regions of crystalline silicon, polysilicon or insulators, usually silicon dioxide. In the case of LOCOS isolation, the surface is also non-planar.

Process and Device Simulation of Field Emission Microtrides

One of the most beneficial merits of computer-based experiment using TCAD lies in its capability of a total simulation of the target device. One can consider its novel fabrication process and its device performance at the same time without time consuming and expensive experiments using real wafers. Take field emission microtriodes, for example.