• Simulation Standard Technical Journal

Simulation Standard

Technical Journal

A Journal for Process and Device Engineers

Simulation of Silica Microlenslet Formation by Etch and Reflow Using Elite and SSuprem4

IntroductionIn response to high demand, device designers are developing silica microlenslets that offer efficient coupling between optical fiber bundles and arrays of photodetectors, LEDs, or VCSELs. Microlenslet design involves precise control of the surface curvature in order to place the focus in the optimal region.

Remote ALTER processing

A new parallelization method has been implemented into SmartSpice. Now .ALTERs can be destributed not only over several CPUs (by using -P option), but over a network of computers as well.Remote .ALTER processing works the following way:When it is invoked (by using -remote command line option), SmartSpice will read the input deck and check for .ALTER statements in it. If there are no .ALTER statements in the input deck, SmartSpice will just continue simulating the given netlist in batch mode. If .ALTERs are found, SmartSpice will extract parts of the netlist which form entire circuits and write out each circuit as separate files (.ALTER files). Resulting files containing one altered circuit each are named by adding the suffix -n to the composite basical netlist file name and have no extension. Number of produced files equals to the amount of .ALTER statements in the composite netlist plus one (deck without .ALTERs).

New SmartLIb Library of Models

In all previous versions of SmartSpice the model code (BSIM, diode etc.) was included in the one executable (SmartSpice ). This means any updates to the model code would take a while to reach the customer because of the full SPICE functionality checks required before releasing a new SmartSpice version.

BSIM4 Model Verilog-A Implementation

The Verilog-A hardware description language opens many areas to SPICE users in the field of compact models, allowing manufacturers and universities to study or customize the existing models.

Stress Effect Model in BSIM3v3 Model

Stress effect models are now implemented in major models such as BSIM4 or HiSIM. The need for evermore accurate models with a strong relation to technology is accute. Since BSIM3v3 is still a widely-used model and has not been totally replaced by its successor, an improvement was made to the model in SmartSpice to fulfill customers need for stress effect equations.

New Philips MOS20 LDMOS Model in SmartSpice

Philips MOS20 was released in January 2004. Its purpose is to provide a high-voltage compact model to describe both operation of the channel region and drift region under the thin gate oxide.