{"id":66448,"date":"2026-09-03T16:07:48","date_gmt":"2026-09-03T23:07:48","guid":{"rendered":"https:\/\/silvaco.com\/%e6%9c%aa%e5%88%86%e7%b1%bb\/predictive-tcad-modeling-of-normally-off-p-gan-hemts-for-dynamic-rdson-leakage-breakdown-and-ml-based-design-exploration\/"},"modified":"2026-09-04T10:28:49","modified_gmt":"2026-09-04T17:28:49","slug":"predictive-tcad-modeling-of-normally-off-p-gan-hemts-for-dynamic-rdson-leakage-breakdown-and-ml-based-design-exploration","status":"publish","type":"post","link":"https:\/\/silvaco.com\/zh-hans\/simulation-standard-zh-hans\/predictive-tcad-modeling-of-normally-off-p-gan-hemts-for-dynamic-rdson-leakage-breakdown-and-ml-based-design-exploration\/","title":{"rendered":"Predictive TCAD Modeling of Normally-Off p-GaN HEMTs for Dynamic RDS(on), Leakage, Breakdown, and ML-Based Design Exploration"},"content":{"rendered":"
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Predictive TCAD Modeling of Normally-Off p-GaN HEMTs for Dynamic RDS(on), Leakage, Breakdown, and ML-Based Design Exploration<\/b><\/h1>\n

Abstract<\/b><\/p>\n

\"\"This article presents a practical simulation workflow for predictive simulation of normally-off p-GaN high-electron-mobility transistors (HEMTs), with emphasis on device-physics calibration, leakage modeling, dynamic RDS(on), breakdown behavior, and machine-learning-assisted design exploration. The workflow is based on a 100 V p-GaN HEMT reference structure and combines process-informed device definition, careful meshing, calibrated Victory Device physics models, mixed-mode switching simulation, Design of Experiments (DOE), and Victory Analytics surrogate modeling. The goal is to establish a repeatable methodology that helps engineers understand how traps, polarization, Mg diffusion, electric-field distribution, and switching conditions influence GaN power-device performance and reliability.<\/p>\n<\/div><\/section><\/div>

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