{"id":39375,"date":"2022-01-21T13:28:08","date_gmt":"2022-01-21T21:28:08","guid":{"rendered":"https:\/\/silvaco.com\/%e6%9c%aa%e5%88%86%e7%b1%bb\/webinar-how-to-use-device-simulation-as-a-tool-for-understanding-gan-hemts\/"},"modified":"2025-10-27T14:42:57","modified_gmt":"2025-10-27T21:42:57","slug":"webinar-how-to-use-device-simulation-as-a-tool-for-understanding-gan-hemts","status":"publish","type":"post","link":"https:\/\/silvaco.com\/zh-hans\/webinar\/how-to-use-device-simulation-as-a-tool-for-understanding-gan-hemts\/","title":{"rendered":"How to Use Device Simulation as a Tool for Understanding GaN HEMTs"},"content":{"rendered":"<div id='template_slider'  class='avia-fullwidth-slider main_color avia-shadow   avia-builder-el-0  el_before_av_section  avia-builder-el-first   container_wrap fullsize' style=' '  ><div   data-size='no scaling'  data-lightbox_size='large'  data-animation='slide'  data-conditional_play=''  data-ids='3925'  data-video_counter='0'  data-autoplay='false'  data-bg_slider='false'  data-slide_height=''  data-handle='av_slideshow_full'  data-interval='5'  data-class=' '  data-el_id=''  data-css_id=''  data-scroll_down=''  data-control_layout='av-control-default'  data-custom_markup=''  data-perma_caption=''  data-autoplay_stopper=''  data-image_attachment=''  data-min_height='110px'  data-lazy_loading='disabled'  data-src=''  data-position='top left'  data-repeat='no-repeat'  data-attach='scroll'  data-stretch=''  class='avia-slideshow avia-slideshow-1  av-control-default av-default-height-applied avia-slideshow-no scaling av_slideshow_full   avia-slide-slider '  itemprop=\"image\" itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/ImageObject\" ><ul class='avia-slideshow-inner ' style='padding-bottom: 10.46875%;' ><li  class=' av-single-slide slide-1 ' ><div data-rel='slideshow-1' class='avia-slide-wrap '   ><div class = \"caption_fullwidth av-slideshow-caption caption_bottom\"><div class = \"container caption_container\"><div class = \"slideshow_caption\"><div class = \"slideshow_inner_caption\"><div class = \"slideshow_align_caption\"><h2  style='font-size:50px; ' class='avia-caption-title   av-small-font-size-overwrite av-small-font-size-36 av-mini-font-size-overwrite av-mini-font-size-24'  itemprop=\"name\" >Webinars<\/h2><\/div><\/div><\/div><\/div><\/div><img decoding=\"async\" class=\"wp-image-18676 avia-img-lazy-loading-not-18676\"  src=\"https:\/\/silvaco.com\/wp-content\/uploads\/2018\/12\/Webinar.jpg\" width=\"1920\" height=\"201\" title='Banner Blue' alt=''  itemprop=\"thumbnailUrl\"  style='min-height:110px; min-width:1051px; ' srcset=\"https:\/\/silvaco.com\/wp-content\/uploads\/2018\/12\/Webinar.jpg 1920w, https:\/\/silvaco.com\/wp-content\/uploads\/2018\/12\/Webinar-300x31.jpg 300w, https:\/\/silvaco.com\/wp-content\/uploads\/2018\/12\/Webinar-1030x108.jpg 1030w, https:\/\/silvaco.com\/wp-content\/uploads\/2018\/12\/Webinar-768x80.jpg 768w, https:\/\/silvaco.com\/wp-content\/uploads\/2018\/12\/Webinar-1536x161.jpg 1536w, https:\/\/silvaco.com\/wp-content\/uploads\/2018\/12\/Webinar-1500x157.jpg 1500w, https:\/\/silvaco.com\/wp-content\/uploads\/2018\/12\/Webinar-705x74.jpg 705w, https:\/\/silvaco.com\/wp-content\/uploads\/2018\/12\/Webinar-43x5.jpg 43w, https:\/\/silvaco.com\/wp-content\/uploads\/2018\/12\/Webinar-63x7.jpg 63w, https:\/\/silvaco.com\/wp-content\/uploads\/2018\/12\/Webinar-48x5.jpg 48w\" sizes=\"(max-width: 1920px) 100vw, 1920px\" \/><\/div><\/li><\/ul><\/div><\/div>\n<div id='av_section_1'  class='avia-section main_color avia-section-small avia-no-border-styling  avia-bg-style-scroll  avia-builder-el-1  el_after_av_slideshow_full  avia-builder-el-last   container_wrap fullsize' style='background-color: #ffffff;  margin-top:0px; margin-bottom:0px; '  ><div class='container' ><div class='template-page content  av-content-full alpha units'><div class='post-entry post-entry-type-page post-entry-39375'><div class='entry-content-wrapper clearfix'>\n<div class='flex_column_table av-equal-height-column-flextable -flextable' style='margin-top:20px; margin-bottom:0px; '><div class=\"flex_column av_three_fourth  flex_column_table_cell av-equal-height-column av-align-top first  avia-builder-el-2  el_before_av_one_fourth  avia-builder-el-first  \" style='padding:0px 0px 0px 0px ; border-radius:0px; '><section class=\"av_textblock_section \"  itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock  '   itemprop=\"text\" ><h1>How to Use Device Simulation as a Tool for Understanding GaN HEMTs<\/h1>\n<p><img loading=\"lazy\" decoding=\"async\" class=\"size-full wp-image-38202 alignright\" src=\"https:\/\/silvaco.com\/wp-content\/uploads\/2022\/01\/WebinarGaN-HEMT.jpg\" alt=\"Gan-HEMT Webinar\" width=\"200\" height=\"120\" srcset=\"https:\/\/silvaco.com\/wp-content\/uploads\/2022\/01\/WebinarGaN-HEMT.jpg 200w, https:\/\/silvaco.com\/wp-content\/uploads\/2022\/01\/WebinarGaN-HEMT-43x26.jpg 43w, https:\/\/silvaco.com\/wp-content\/uploads\/2022\/01\/WebinarGaN-HEMT-63x38.jpg 63w, https:\/\/silvaco.com\/wp-content\/uploads\/2022\/01\/WebinarGaN-HEMT-48x29.jpg 48w\" sizes=\"(max-width: 200px) 100vw, 200px\" \/>Gallium Nitride based devices are highly attractive for both RF and power switching applications due to a combination of outstanding materials properties. However, although the basic principles are well understood and can now be accurately reproduced in device simulators, there are many important aspects that are still poorly understood and the subject of continuing active research.<\/p>\n<p>This talk will illustrate with some specific published examples of how device simulation can be a powerful tool to help explain complex performance limiting device instabilities in both RF and power devices. Particular focus is placed on dynamic Ron in GaN-on-Si power switches, persistent photoconductivity in GaN HEMT epitaxy, and transconductance dispersion in iron doped GaN HEMTs.<\/p>\n<h4>What You Will Learn<\/h4>\n<ul>\n<li>What are GaN HEMTs and where are they used<\/li>\n<li>Why is a buffer layer is needed<\/li>\n<li>Understanding GaN-on-Si Power switching buffers<\/li>\n<li>Persistent Photoconductivity in GaN HEMT epitaxy<\/li>\n<li>RF GaN-on-SiC HEMT transconductance dispersion<\/li>\n<\/ul>\n<\/div><\/section><br \/>\n<div   class='hr hr-default   avia-builder-el-4  el_after_av_textblock  el_before_av_textblock '><span class='hr-inner ' ><span class='hr-inner-style'><\/span><\/span><\/div><br \/>\n<section class=\"av_textblock_section \"  itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock  '   itemprop=\"text\" ><h2>Presenter<\/h2>\n<\/div><\/section><br \/>\n<section class=\"av_textblock_section \"  itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock  '   itemprop=\"text\" ><p><img loading=\"lazy\" decoding=\"async\" class=\"wp-image-38207 alignleft\" src=\"https:\/\/silvaco.com\/wp-content\/uploads\/2022\/01\/Michael_Uren.jpg\" alt=\"Micheal Urn photo\" width=\"104\" height=\"104\" srcset=\"https:\/\/silvaco.com\/wp-content\/uploads\/2022\/01\/Michael_Uren.jpg 250w, https:\/\/silvaco.com\/wp-content\/uploads\/2022\/01\/Michael_Uren-80x80.jpg 80w, https:\/\/silvaco.com\/wp-content\/uploads\/2022\/01\/Michael_Uren-36x36.jpg 36w, https:\/\/silvaco.com\/wp-content\/uploads\/2022\/01\/Michael_Uren-180x180.jpg 180w, https:\/\/silvaco.com\/wp-content\/uploads\/2022\/01\/Michael_Uren-37x37.jpg 37w, https:\/\/silvaco.com\/wp-content\/uploads\/2022\/01\/Michael_Uren-55x55.jpg 55w, https:\/\/silvaco.com\/wp-content\/uploads\/2022\/01\/Michael_Uren-48x48.jpg 48w\" sizes=\"(max-width: 104px) 100vw, 104px\" \/>Michael Uren is Research Professor in the Centre for Device Thermography and Reliability at the University of Bristol, UK, and has now accumulated more than 40 years device physics experience. He acquired his MA and PhD in Physics at the University of Cambridge on electron transport in Si MOSFETs, followed by a postdoc at IBM, Yorktown Heights, USA. He worked at RSRE Malvern, UK (now QinetiQ) on SOI CMOS, random telegraph and 1\/f noise, and interface trapping. Later he successfully implemented SiC RF power MESFET, GaN S-band and X-band MMIC processes. He moved to Bristol in 2011 to join Professor Martin Kuball\u2019s team where he has led the device electrical research on GaN, and Ga2O3 devices. His recent interests have focused on the understanding of the role of epitaxy on device performance.<\/p>\n<\/div><\/section><br \/>\n<div   class='hr hr-default   avia-builder-el-7  el_after_av_textblock  el_before_av_textblock '><span class='hr-inner ' ><span class='hr-inner-style'><\/span><\/span><\/div><br \/>\n<section class=\"av_textblock_section \"  itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock  '   itemprop=\"text\" ><h3>WHO SHOULD ATTEND:<\/h3>\n<\/div><\/section><br \/>\n<section class=\"av_textblock_section \"  itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock  '   itemprop=\"text\" ><p>IP, Device, Circuit, CAD, SoC and System design engineers, product managers and engineering management.<\/p>\n<\/div><\/section><\/p><\/div><div class='av-flex-placeholder'><\/div><div class=\"flex_column av_one_fourth  flex_column_table_cell av-equal-height-column av-align-top   avia-builder-el-10  el_after_av_three_fourth  avia-builder-el-last  \" style='padding:0px 0px 0px 0px ; border-radius:0px; '><p><div   class='hr hr-default   avia-builder-el-11  el_before_av_codeblock  avia-builder-el-first '><span class='hr-inner ' ><span class='hr-inner-style'><\/span><\/span><\/div><br \/>\n<br \/>\n<div  class='avia-button-wrap avia-button-center  avia-builder-el-13  el_after_av_codeblock  el_before_av_hr ' ><a href='https:\/\/silvaco.com\/dynamicweb\/jsp\/downloads\/DownloadDocStepsAction.do?req=silen-download&amp;nm=use_device_simulation_for_understanding_GaN_HEMT.mp4&amp;prefixname=video'  class='avia-button  avia-color-grey   avia-icon_select-no avia-size-small avia-position-center '   ><span class='avia_iconbox_title' >Register to View Archive<\/span><\/a><\/div><br \/>\n<div   class='hr hr-default   avia-builder-el-14  el_after_av_button  avia-builder-el-last '><span class='hr-inner ' ><span class='hr-inner-style'><\/span><\/span><\/div><\/p><\/div><\/div><!--close column table wrapper. Autoclose: 1 -->\n","protected":false},"excerpt":{"rendered":"<p><b>February 24, 2022 | 10:00 am \u2013 10:30 am (PST)<\/b>\u2028<br \/>\nThis webinar will illustrate through specific published examples of how TCAD device simulation of GaN based devices can be a powerful tool to help explain complex performance limiting device instabilities in both RF and power devices.<\/p>\n","protected":false},"author":8,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[7729],"tags":[],"yoast_head":"<!-- This site is optimized with the Yoast SEO Premium plugin v24.0 (Yoast SEO v24.0) - https:\/\/yoast.com\/wordpress\/plugins\/seo\/ -->\n<title>How to Use Device Simulation as a Tool for Understanding GaN HEMTs - Silvaco<\/title>\n<meta name=\"description\" content=\"Gallium Nitride based devices are highly attractive for both RF and power switching applications due to a combination of outstanding material\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/silvaco.com\/zh-hans\/webinar\/how-to-use-device-simulation-as-a-tool-for-understanding-gan-hemts\/\" \/>\n<meta property=\"og:locale\" content=\"zh_CN\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"How to Use Device Simulation as a Tool for Understanding GaN HEMTs\" \/>\n<meta property=\"og:description\" content=\"Gallium Nitride based devices are highly attractive for both RF and power switching applications due to a combination of outstanding material\" \/>\n<meta property=\"og:url\" content=\"https:\/\/silvaco.com\/zh-hans\/webinar\/how-to-use-device-simulation-as-a-tool-for-understanding-gan-hemts\/\" \/>\n<meta property=\"og:site_name\" content=\"Silvaco\" \/>\n<meta property=\"article:publisher\" content=\"https:\/\/www.facebook.com\/SilvacoSoftware\/\" \/>\n<meta property=\"article:published_time\" content=\"2022-01-21T21:28:08+00:00\" \/>\n<meta property=\"article:modified_time\" content=\"2025-10-27T21:42:57+00:00\" \/>\n<meta property=\"og:image\" content=\"https:\/\/silvaco.com\/wp-content\/uploads\/2022\/01\/WebinarGaN-HEMT.jpg\" \/>\n<meta name=\"author\" content=\"Gigi Boss\" \/>\n<meta name=\"twitter:card\" content=\"summary_large_image\" \/>\n<meta name=\"twitter:creator\" content=\"@SilvacoSoftware\" \/>\n<meta name=\"twitter:site\" content=\"@SilvacoSoftware\" \/>\n<meta name=\"twitter:label1\" content=\"\u4f5c\u8005\" \/>\n\t<meta name=\"twitter:data1\" content=\"Gigi Boss\" \/>\n\t<meta name=\"twitter:label2\" content=\"\u9884\u8ba1\u9605\u8bfb\u65f6\u95f4\" \/>\n\t<meta name=\"twitter:data2\" content=\"7 \u5206\" \/>\n<script type=\"application\/ld+json\" class=\"yoast-schema-graph\">{\"@context\":\"https:\/\/schema.org\",\"@graph\":[{\"@type\":\"WebPage\",\"@id\":\"https:\/\/silvaco.com\/zh-hans\/webinar\/how-to-use-device-simulation-as-a-tool-for-understanding-gan-hemts\/\",\"url\":\"https:\/\/silvaco.com\/zh-hans\/webinar\/how-to-use-device-simulation-as-a-tool-for-understanding-gan-hemts\/\",\"name\":\"How to Use Device Simulation as a Tool for Understanding GaN HEMTs - 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