{"id":36925,"date":"2000-02-03T14:23:45","date_gmt":"2000-02-03T14:23:45","guid":{"rendered":"https:\/\/silvaco.com\/%e6%9c%aa%e5%88%86%e7%b1%bb\/reverse-engineering-an-algaas-ingaas-phemt-with-fastblaze\/"},"modified":"2021-10-13T10:52:41","modified_gmt":"2021-10-13T17:52:41","slug":"reverse-engineering-an-algaas-ingaas-phemt-with-fastblaze","status":"publish","type":"post","link":"https:\/\/silvaco.com\/zh-hans\/simulation-standard-zh-hans\/reverse-engineering-an-algaas-ingaas-phemt-with-fastblaze\/","title":{"rendered":"Reverse Engineering An AlGaAs\/InGaAs PHEMT With FastBlaze"},"content":{"rendered":"
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Reverse Engineering An AlGaAs\/InGaAs PHEMT With\u00a0FastBlaze<\/i><\/h1>\n

Introduction<\/span><\/p>\n

FastBlaze<\/b><\/i>\u00a0is an ultra-fast physical MESFET and HEMT simulator which incorporates advanced physical models. By designing the simulator and its framework specifically for these devices, Silvaco has optimized device simulation algorithms and data structures for high speed without sacrificing the accuracy of the physical models. The application of\u00a0FastBlaze<\/b><\/i>\u00a0to the simulation of a specific PHEMT is presented here. We highlight details of how the device was constructed and how the simulation was tuned to match the reported device characteristics.<\/p>\n

Device Description<\/span><\/p>\n

This simulation was based on a double recessed pseudomorphic GaAs High Electron Mobility Transistor (PHEMT) for high voltage operation. The construction and operation of this device was described by Kao et al., of GE, in the 1992 IEEE IEDM Technical Digest [1]. They reported that a PHEMT with 0.25 um gate length exhibited a gate to drain breakdown voltage of 30 volts, a peak gm of 510 mS\/mm, and a maximum current density of 540 mA\/mm. The device also had excellent 4.5 and 10 GHz power performance.<\/p>\n<\/div><\/section><\/div>

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