{"id":36877,"date":"2000-08-01T23:00:36","date_gmt":"2000-08-01T23:00:36","guid":{"rendered":"https:\/\/silvaco.com\/%e6%9c%aa%e5%88%86%e7%b1%bb\/yield-analysis-and-performance-optimization-using-fastblaze-and-spayn\/"},"modified":"2021-10-13T10:50:49","modified_gmt":"2021-10-13T17:50:49","slug":"yield-analysis-and-performance-optimization-using-fastblaze-and-spayn","status":"publish","type":"post","link":"https:\/\/silvaco.com\/zh-hans\/simulation-standard-zh-hans\/yield-analysis-and-performance-optimization-using-fastblaze-and-spayn\/","title":{"rendered":"Yield Analysis and Performance Optimization Using FastBlaze and SPAYN"},"content":{"rendered":"
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Yield Analysis and Performance Optimization Using\u00a0FastBlaze<\/i>\u00a0and\u00a0SPAYN<\/i><\/h1>\n

Introduction<\/b><\/h3>\n

In previous\u00a0Simulation Standard<\/i>\u00a0articles (Nov 97 & Nov 98)\u00a0FastBlaze<\/b><\/i>\u00a0has been presented as a new, highly efficient approach to simulating advanced HEMTs and MESFETs.<\/p>\n

Conventional device simulators often suffer from slow execution times, leading to a trade off between mesh density and physical model complexity against CPU run time and convergence. This requires engineers to compromise accuracy to achieve a reasonable throughput.<\/p>\n

By focusing solely upon FET simulation,\u00a0FastBlaze<\/b><\/i>\u00a0has been able to greatly optimize the physical solution procedure, enabling the use of the most sophisticated physical models while maintaining a fast execution (typically less than 1 minute for a full set of DC ID-<\/span>VDS<\/span>\u00a0curves) This speed enables both complex and extensive experimental designs to be completed on a reasonable time scale, permitting experiments that would be prohibitively expensive for more traditional device simulators.<\/p>\n<\/div><\/section><\/div>

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