{"id":36852,"date":"2000-11-01T22:24:22","date_gmt":"2000-11-01T22:24:22","guid":{"rendered":"https:\/\/silvaco.com\/%e6%9c%aa%e5%88%86%e7%b1%bb\/simulation-of-vertical-double-gate-soi-mosfets-using-device3d\/"},"modified":"2026-10-15T14:34:46","modified_gmt":"2026-10-15T21:34:46","slug":"simulation-of-vertical-double-gate-soi-mosfets-using-device3d","status":"publish","type":"post","link":"https:\/\/silvaco.com\/zh-hans\/simulation-standard-zh-hans\/simulation-of-vertical-double-gate-soi-mosfets-using-device3d\/","title":{"rendered":"Simulation of Vertical Double-Gate SOI MOSFETs Using Device3D"},"content":{"rendered":"

Simulation of Vertical Double-Gate SOI MOSFETs Using Device3D<\/h1>\n

Introduction<\/h3>\n

This article will present the simulation methodology of a self-aligned double-gate MOSFET structure (FinFET) using SILVACO 3-D simulation suite. The double-gate MOSFET is one of the most attractive alternative to classical MOSFET structure for gate length down to 20nm. The main advantage of the FinFET is the ability to drastically reduce the short channel effect. In spite of his double-gate structure, the FinFET is closed to its root, the conventional MOSFET in layout and fabrication. 3-D numerical simulations of the FinFET are performed in this article, in order to validate the basic principles and to uncover several important aspects: evaluation of the length , width and quantum effects.<\/p>\n

\"\"<\/p>\n

Download Simulation Standard<\/a><\/p>\n","protected":false},"excerpt":{"rendered":"

This article will present the simulation methodology of a self-aligned double-gate MOSFET structure (FinFET) using SILVACO 3-D simulation suite. The double-gate MOSFET is one of the most attractive alternative to classical MOSFET structure for gate length down to 20nm. The main advantage of the FinFET is the ability to drastically reduce the short channel effect. In spite of his double-gate structure, the FinFET is closed to its root, the conventional MOSFET in layout and fabrication. 3-D numerical simulations of the FinFET are performed in this article, in order to validate the basic principles and to uncover several important aspects: evaluation of the length , width and quantum effects.<\/p>\n","protected":false},"author":12,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"inline_featured_image":false,"footnotes":""},"categories":[7723],"tags":[],"class_list":["post-36852","post","type-post","status-publish","format-standard","hentry","category-simulation-standard-zh-hans","entry"],"yoast_head":"\nSimulation of Vertical Double-Gate SOI MOSFETs Using Device3D - Silvaco<\/title>\n<meta name=\"description\" content=\"Simulation of Vertical Double-Gate SOI MOSFETs Using Device3D\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/silvaco.com\/zh-hans\/simulation-standard-zh-hans\/simulation-of-vertical-double-gate-soi-mosfets-using-device3d\/\" \/>\n<meta property=\"og:locale\" content=\"zh_CN\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"Simulation of Vertical Double-Gate SOI MOSFETs Using Device3D\" \/>\n<meta property=\"og:description\" content=\"Simulation of Vertical Double-Gate SOI MOSFETs Using Device3D\" \/>\n<meta property=\"og:url\" content=\"https:\/\/silvaco.com\/zh-hans\/simulation-standard-zh-hans\/simulation-of-vertical-double-gate-soi-mosfets-using-device3d\/\" \/>\n<meta property=\"og:site_name\" content=\"Silvaco\" \/>\n<meta property=\"article:publisher\" content=\"https:\/\/www.facebook.com\/SilvacoSoftware\/\" \/>\n<meta property=\"article:published_time\" content=\"2000-11-01T22:24:22+00:00\" \/>\n<meta property=\"article:modified_time\" content=\"2026-10-15T21:34:46+00:00\" \/>\n<meta property=\"og:image\" content=\"https:\/\/silvaco.com\/wp-content\/uploads\/simulationstandard\/simstd_nov_2000_a2.jpg\" \/>\n<meta name=\"author\" content=\"Casey Molver\" \/>\n<meta name=\"twitter:card\" content=\"summary_large_image\" \/>\n<meta name=\"twitter:creator\" content=\"@SilvacoSoftware\" \/>\n<meta name=\"twitter:site\" content=\"@SilvacoSoftware\" \/>\n<meta name=\"twitter:label1\" content=\"\u4f5c\u8005\" \/>\n\t<meta name=\"twitter:data1\" content=\"Casey Molver\" \/>\n\t<meta name=\"twitter:label2\" content=\"\u9884\u8ba1\u9605\u8bfb\u65f6\u95f4\" \/>\n\t<meta name=\"twitter:data2\" content=\"1 minute\" \/>\n<script type=\"application\/ld+json\" class=\"yoast-schema-graph\">{\"@context\":\"https:\\\/\\\/schema.org\",\"@graph\":[{\"@type\":\"Article\",\"@id\":\"https:\\\/\\\/silvaco.com\\\/zh-hans\\\/simulation-standard-zh-hans\\\/simulation-of-vertical-double-gate-soi-mosfets-using-device3d\\\/#article\",\"isPartOf\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/zh-hans\\\/simulation-standard-zh-hans\\\/simulation-of-vertical-double-gate-soi-mosfets-using-device3d\\\/\"},\"author\":{\"name\":\"Casey Molver\",\"@id\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/#\\\/schema\\\/person\\\/2763eb741ca5ac04477fdff50ed84c80\"},\"headline\":\"Simulation of Vertical Double-Gate SOI MOSFETs Using Device3D\",\"datePublished\":\"2000-11-01T22:24:22+00:00\",\"dateModified\":\"2026-10-15T21:34:46+00:00\",\"mainEntityOfPage\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/zh-hans\\\/simulation-standard-zh-hans\\\/simulation-of-vertical-double-gate-soi-mosfets-using-device3d\\\/\"},\"wordCount\":129,\"image\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/zh-hans\\\/simulation-standard-zh-hans\\\/simulation-of-vertical-double-gate-soi-mosfets-using-device3d\\\/#primaryimage\"},\"thumbnailUrl\":\"https:\\\/\\\/silvaco.com\\\/wp-content\\\/uploads\\\/simulationstandard\\\/simstd_nov_2000_a2.jpg\",\"articleSection\":[\"Simulation Standard\"],\"inLanguage\":\"zh-CN\"},{\"@type\":\"WebPage\",\"@id\":\"https:\\\/\\\/silvaco.com\\\/zh-hans\\\/simulation-standard-zh-hans\\\/simulation-of-vertical-double-gate-soi-mosfets-using-device3d\\\/\",\"url\":\"https:\\\/\\\/silvaco.com\\\/zh-hans\\\/simulation-standard-zh-hans\\\/simulation-of-vertical-double-gate-soi-mosfets-using-device3d\\\/\",\"name\":\"Simulation of Vertical Double-Gate SOI MOSFETs Using Device3D - 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