{"id":36852,"date":"2000-11-01T22:24:22","date_gmt":"2000-11-01T22:24:22","guid":{"rendered":"https:\/\/silvaco.com\/%e6%9c%aa%e5%88%86%e7%b1%bb\/simulation-of-vertical-double-gate-soi-mosfets-using-device3d\/"},"modified":"2021-10-13T10:47:37","modified_gmt":"2021-10-13T17:47:37","slug":"simulation-of-vertical-double-gate-soi-mosfets-using-device3d","status":"publish","type":"post","link":"https:\/\/silvaco.com\/zh-hans\/simulation-standard-zh-hans\/simulation-of-vertical-double-gate-soi-mosfets-using-device3d\/","title":{"rendered":"Simulation of Vertical Double-Gate SOI MOSFETs Using Device3D"},"content":{"rendered":"
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Simulation of Vertical Double-Gate SOI MOSFETs Using Device3D<\/h1>\n

Introduction<\/h3>\n

This article will present the simulation methodology of a self-aligned double-gate MOSFET structure (FinFET) using SILVACO 3-D simulation suite. The double-gate MOSFET is one of the most attractive alternative to classical MOSFET structure for gate length down to 20nm. The main advantage of the FinFET is the ability to drastically reduce the short channel effect. In spite of his double-gate structure, the FinFET is closed to its root, the conventional MOSFET in layout and fabrication. 3-D numerical simulations of the FinFET are performed in this article, in order to validate the basic principles and to uncover several important aspects: evaluation of the length , width and quantum effects.<\/p>\n<\/div><\/section><\/div>

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