{"id":36804,"date":"2002-05-01T22:05:10","date_gmt":"2002-05-01T22:05:10","guid":{"rendered":"https:\/\/silvaco.com\/%e6%9c%aa%e5%88%86%e7%b1%bb\/breakdown-analysis-of-a-body-contacted-submicron-high-electron-mobility-transistor\/"},"modified":"2026-10-15T14:32:30","modified_gmt":"2026-10-15T21:32:30","slug":"breakdown-analysis-of-a-body-contacted-submicron-high-electron-mobility-transistor","status":"publish","type":"post","link":"https:\/\/silvaco.com\/zh-hans\/simulation-standard-zh-hans\/breakdown-analysis-of-a-body-contacted-submicron-high-electron-mobility-transistor\/","title":{"rendered":"Breakdown Analysis of a Body-Contacted Submicron High Electron Mobility Transistor"},"content":{"rendered":"<h1>Breakdown Analysis of a Body-Contacted Submicron High Electron Mobility Transistor<\/h1>\n<h3>Introduction<\/h3>\n<p>Interest continues to grow in the development of high electron mobility transistor (HEMT) technologies for micrometer and millimeter wave power applications. A primary concern of device designers working with such technologies is the breakdown behavior in both the on- and off-states. As is the case for most field-effect transistors, reducing device dimensions results in a larger internal electric field near the drain-end of the device?s channel. The presence of such a field within the device can affect many areas of device performance including the breakdown characteristics.<\/p>\n<p><img loading=\"lazy\" width=\"617\" height=\"800\" src=\"https:\/\/silvaco.com\/wp-content\/uploads\/simulationstandard\/simstd_may_2002_a2-e1611193990544.jpg\" class=\"cleaned-enfold-image\" alt=\"\" decoding=\"async\" loading=\"lazy\" \/><\/p>\n<p><a href=\"https:\/\/silvaco.com\/dynamicweb\/jsp\/downloads\/DownloadDocStepsAction.do?req=download&#038;nm=simstd_may_2002_a2.pdf\" class=\"BGT-btn\" target=\"_blank\" rel=\"noopener noreferrer\">Download Simulation Standard<\/a><\/p>\n","protected":false},"excerpt":{"rendered":"<p>Interest continues to grow in the development of high electron mobility transistor (HEMT) technologies for micrometer and millimeter wave power applications. A primary concern of device designers working with such technologies is the breakdown behavior in both the on- and off-states. As is the case for most field-effect transistors, reducing device dimensions results in a larger internal electric field near the drain-end of the device?s channel. The presence of such a field within the device can affect many areas of device performance including the breakdown characteristics.<\/p>\n","protected":false},"author":12,"featured_media":22216,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"inline_featured_image":false,"footnotes":""},"categories":[7723],"tags":[],"class_list":["post-36804","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-simulation-standard-zh-hans","entry","has-media"],"yoast_head":"<!-- This site is optimized with the Yoast SEO Premium plugin v28.7 (Yoast SEO v28.7) - https:\/\/yoast.com\/product\/yoast-seo-premium-wordpress\/ -->\n<title>Breakdown Analysis of a Body-Contacted Submicron High Electron Mobility Transistor - Silvaco<\/title>\n<meta name=\"description\" content=\"Breakdown Analysis of a Body-Contacted Submicron High Electron Mobility Transistor\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/silvaco.com\/zh-hans\/simulation-standard-zh-hans\/breakdown-analysis-of-a-body-contacted-submicron-high-electron-mobility-transistor\/\" \/>\n<meta property=\"og:locale\" content=\"zh_CN\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"Breakdown Analysis of a Body-Contacted Submicron High Electron Mobility Transistor\" \/>\n<meta property=\"og:description\" content=\"Breakdown Analysis of a Body-Contacted Submicron High Electron Mobility Transistor\" \/>\n<meta property=\"og:url\" content=\"https:\/\/silvaco.com\/zh-hans\/simulation-standard-zh-hans\/breakdown-analysis-of-a-body-contacted-submicron-high-electron-mobility-transistor\/\" \/>\n<meta property=\"og:site_name\" content=\"Silvaco\" \/>\n<meta property=\"article:publisher\" content=\"https:\/\/www.facebook.com\/SilvacoSoftware\/\" \/>\n<meta property=\"article:published_time\" content=\"2002-05-01T22:05:10+00:00\" \/>\n<meta property=\"article:modified_time\" content=\"2026-10-15T21:32:30+00:00\" \/>\n<meta property=\"og:image\" content=\"https:\/\/silvaco.com\/wp-content\/uploads\/simulationstandard\/simstd_may_2002_a2-e1611193990544.jpg\" \/>\n\t<meta property=\"og:image:width\" content=\"617\" \/>\n\t<meta property=\"og:image:height\" content=\"800\" \/>\n\t<meta property=\"og:image:type\" content=\"image\/jpeg\" \/>\n<meta name=\"author\" content=\"Casey Molver\" \/>\n<meta name=\"twitter:card\" content=\"summary_large_image\" \/>\n<meta name=\"twitter:creator\" content=\"@SilvacoSoftware\" \/>\n<meta name=\"twitter:site\" content=\"@SilvacoSoftware\" \/>\n<meta name=\"twitter:label1\" content=\"\u4f5c\u8005\" \/>\n\t<meta name=\"twitter:data1\" content=\"Casey Molver\" \/>\n\t<meta name=\"twitter:label2\" content=\"\u9884\u8ba1\u9605\u8bfb\u65f6\u95f4\" \/>\n\t<meta name=\"twitter:data2\" content=\"1 minute\" \/>\n<script type=\"application\/ld+json\" class=\"yoast-schema-graph\">{\"@context\":\"https:\\\/\\\/schema.org\",\"@graph\":[{\"@type\":\"Article\",\"@id\":\"https:\\\/\\\/silvaco.com\\\/zh-hans\\\/simulation-standard-zh-hans\\\/breakdown-analysis-of-a-body-contacted-submicron-high-electron-mobility-transistor\\\/#article\",\"isPartOf\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/zh-hans\\\/simulation-standard-zh-hans\\\/breakdown-analysis-of-a-body-contacted-submicron-high-electron-mobility-transistor\\\/\"},\"author\":{\"name\":\"Casey Molver\",\"@id\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/#\\\/schema\\\/person\\\/2763eb741ca5ac04477fdff50ed84c80\"},\"headline\":\"Breakdown Analysis of a Body-Contacted Submicron High Electron Mobility Transistor\",\"datePublished\":\"2002-05-01T22:05:10+00:00\",\"dateModified\":\"2026-10-15T21:32:30+00:00\",\"mainEntityOfPage\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/zh-hans\\\/simulation-standard-zh-hans\\\/breakdown-analysis-of-a-body-contacted-submicron-high-electron-mobility-transistor\\\/\"},\"wordCount\":111,\"image\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/zh-hans\\\/simulation-standard-zh-hans\\\/breakdown-analysis-of-a-body-contacted-submicron-high-electron-mobility-transistor\\\/#primaryimage\"},\"thumbnailUrl\":\"https:\\\/\\\/silvaco.com\\\/wp-content\\\/uploads\\\/simulationstandard\\\/simstd_may_2002_a2-e1611193990544.jpg\",\"articleSection\":[\"Simulation Standard\"],\"inLanguage\":\"zh-CN\"},{\"@type\":\"WebPage\",\"@id\":\"https:\\\/\\\/silvaco.com\\\/zh-hans\\\/simulation-standard-zh-hans\\\/breakdown-analysis-of-a-body-contacted-submicron-high-electron-mobility-transistor\\\/\",\"url\":\"https:\\\/\\\/silvaco.com\\\/zh-hans\\\/simulation-standard-zh-hans\\\/breakdown-analysis-of-a-body-contacted-submicron-high-electron-mobility-transistor\\\/\",\"name\":\"Breakdown Analysis of a Body-Contacted Submicron High Electron Mobility Transistor - Silvaco\",\"isPartOf\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/#website\"},\"primaryImageOfPage\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/zh-hans\\\/simulation-standard-zh-hans\\\/breakdown-analysis-of-a-body-contacted-submicron-high-electron-mobility-transistor\\\/#primaryimage\"},\"image\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/zh-hans\\\/simulation-standard-zh-hans\\\/breakdown-analysis-of-a-body-contacted-submicron-high-electron-mobility-transistor\\\/#primaryimage\"},\"thumbnailUrl\":\"https:\\\/\\\/silvaco.com\\\/wp-content\\\/uploads\\\/simulationstandard\\\/simstd_may_2002_a2-e1611193990544.jpg\",\"datePublished\":\"2002-05-01T22:05:10+00:00\",\"dateModified\":\"2026-10-15T21:32:30+00:00\",\"author\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/#\\\/schema\\\/person\\\/2763eb741ca5ac04477fdff50ed84c80\"},\"description\":\"Breakdown Analysis of a Body-Contacted Submicron High Electron Mobility Transistor\",\"breadcrumb\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/zh-hans\\\/simulation-standard-zh-hans\\\/breakdown-analysis-of-a-body-contacted-submicron-high-electron-mobility-transistor\\\/#breadcrumb\"},\"inLanguage\":\"zh-CN\",\"potentialAction\":[{\"@type\":\"ReadAction\",\"target\":[\"https:\\\/\\\/silvaco.com\\\/zh-hans\\\/simulation-standard-zh-hans\\\/breakdown-analysis-of-a-body-contacted-submicron-high-electron-mobility-transistor\\\/\"]}]},{\"@type\":\"ImageObject\",\"inLanguage\":\"zh-CN\",\"@id\":\"https:\\\/\\\/silvaco.com\\\/zh-hans\\\/simulation-standard-zh-hans\\\/breakdown-analysis-of-a-body-contacted-submicron-high-electron-mobility-transistor\\\/#primaryimage\",\"url\":\"https:\\\/\\\/silvaco.com\\\/wp-content\\\/uploads\\\/simulationstandard\\\/simstd_may_2002_a2-e1611193990544.jpg\",\"contentUrl\":\"https:\\\/\\\/silvaco.com\\\/wp-content\\\/uploads\\\/simulationstandard\\\/simstd_may_2002_a2-e1611193990544.jpg\",\"width\":617,\"height\":800},{\"@type\":\"BreadcrumbList\",\"@id\":\"https:\\\/\\\/silvaco.com\\\/zh-hans\\\/simulation-standard-zh-hans\\\/breakdown-analysis-of-a-body-contacted-submicron-high-electron-mobility-transistor\\\/#breadcrumb\",\"itemListElement\":[{\"@type\":\"ListItem\",\"position\":1,\"name\":\"Home\",\"item\":\"https:\\\/\\\/silvaco.com\\\/zh-hans\\\/%e9%a6%96%e9%a1%b5\\\/\"},{\"@type\":\"ListItem\",\"position\":2,\"name\":\"Breakdown Analysis of a Body-Contacted Submicron High Electron Mobility Transistor\"}]},{\"@type\":\"WebSite\",\"@id\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/#website\",\"url\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/\",\"name\":\"Silvaco\",\"description\":\"\",\"potentialAction\":[{\"@type\":\"SearchAction\",\"target\":{\"@type\":\"EntryPoint\",\"urlTemplate\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/?s={search_term_string}\"},\"query-input\":{\"@type\":\"PropertyValueSpecification\",\"valueRequired\":true,\"valueName\":\"search_term_string\"}}],\"inLanguage\":\"zh-CN\"},{\"@type\":\"Person\",\"@id\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/#\\\/schema\\\/person\\\/2763eb741ca5ac04477fdff50ed84c80\",\"name\":\"Casey Molver\",\"image\":{\"@type\":\"ImageObject\",\"inLanguage\":\"zh-CN\",\"@id\":\"https:\\\/\\\/secure.gravatar.com\\\/avatar\\\/3dba2e48e0c4a977ea23fa75d38750a7763843df78307070478340a2517b8d6b?s=96&d=blank&r=g\",\"url\":\"https:\\\/\\\/secure.gravatar.com\\\/avatar\\\/3dba2e48e0c4a977ea23fa75d38750a7763843df78307070478340a2517b8d6b?s=96&d=blank&r=g\",\"contentUrl\":\"https:\\\/\\\/secure.gravatar.com\\\/avatar\\\/3dba2e48e0c4a977ea23fa75d38750a7763843df78307070478340a2517b8d6b?s=96&d=blank&r=g\",\"caption\":\"Casey Molver\"},\"url\":\"https:\\\/\\\/silvaco.com\\\/zh-hans\\\/author\\\/caseym\\\/\"}]}<\/script>\n<!-- \/ Yoast SEO Premium plugin. -->","yoast_head_json":{"title":"Breakdown Analysis of a Body-Contacted Submicron High Electron Mobility Transistor - Silvaco","description":"Breakdown Analysis of a Body-Contacted Submicron High Electron Mobility Transistor","robots":{"index":"index","follow":"follow","max-snippet":"max-snippet:-1","max-image-preview":"max-image-preview:large","max-video-preview":"max-video-preview:-1"},"canonical":"https:\/\/silvaco.com\/zh-hans\/simulation-standard-zh-hans\/breakdown-analysis-of-a-body-contacted-submicron-high-electron-mobility-transistor\/","og_locale":"zh_CN","og_type":"article","og_title":"Breakdown Analysis of a Body-Contacted Submicron High Electron Mobility Transistor","og_description":"Breakdown Analysis of a Body-Contacted Submicron High Electron Mobility Transistor","og_url":"https:\/\/silvaco.com\/zh-hans\/simulation-standard-zh-hans\/breakdown-analysis-of-a-body-contacted-submicron-high-electron-mobility-transistor\/","og_site_name":"Silvaco","article_publisher":"https:\/\/www.facebook.com\/SilvacoSoftware\/","article_published_time":"2002-05-01T22:05:10+00:00","article_modified_time":"2026-10-15T21:32:30+00:00","og_image":[{"width":617,"height":800,"url":"https:\/\/silvaco.com\/wp-content\/uploads\/simulationstandard\/simstd_may_2002_a2-e1611193990544.jpg","type":"image\/jpeg"}],"author":"Casey Molver","twitter_card":"summary_large_image","twitter_creator":"@SilvacoSoftware","twitter_site":"@SilvacoSoftware","twitter_misc":{"\u4f5c\u8005":"Casey Molver","\u9884\u8ba1\u9605\u8bfb\u65f6\u95f4":"1 minute"},"schema":{"@context":"https:\/\/schema.org","@graph":[{"@type":"Article","@id":"https:\/\/silvaco.com\/zh-hans\/simulation-standard-zh-hans\/breakdown-analysis-of-a-body-contacted-submicron-high-electron-mobility-transistor\/#article","isPartOf":{"@id":"https:\/\/silvaco.com\/zh-hans\/simulation-standard-zh-hans\/breakdown-analysis-of-a-body-contacted-submicron-high-electron-mobility-transistor\/"},"author":{"name":"Casey Molver","@id":"https:\/\/silvaco.com\/ja\/#\/schema\/person\/2763eb741ca5ac04477fdff50ed84c80"},"headline":"Breakdown Analysis of a Body-Contacted Submicron High Electron Mobility Transistor","datePublished":"2002-05-01T22:05:10+00:00","dateModified":"2026-10-15T21:32:30+00:00","mainEntityOfPage":{"@id":"https:\/\/silvaco.com\/zh-hans\/simulation-standard-zh-hans\/breakdown-analysis-of-a-body-contacted-submicron-high-electron-mobility-transistor\/"},"wordCount":111,"image":{"@id":"https:\/\/silvaco.com\/zh-hans\/simulation-standard-zh-hans\/breakdown-analysis-of-a-body-contacted-submicron-high-electron-mobility-transistor\/#primaryimage"},"thumbnailUrl":"https:\/\/silvaco.com\/wp-content\/uploads\/simulationstandard\/simstd_may_2002_a2-e1611193990544.jpg","articleSection":["Simulation Standard"],"inLanguage":"zh-CN"},{"@type":"WebPage","@id":"https:\/\/silvaco.com\/zh-hans\/simulation-standard-zh-hans\/breakdown-analysis-of-a-body-contacted-submicron-high-electron-mobility-transistor\/","url":"https:\/\/silvaco.com\/zh-hans\/simulation-standard-zh-hans\/breakdown-analysis-of-a-body-contacted-submicron-high-electron-mobility-transistor\/","name":"Breakdown Analysis of a Body-Contacted Submicron High Electron Mobility Transistor - Silvaco","isPartOf":{"@id":"https:\/\/silvaco.com\/ja\/#website"},"primaryImageOfPage":{"@id":"https:\/\/silvaco.com\/zh-hans\/simulation-standard-zh-hans\/breakdown-analysis-of-a-body-contacted-submicron-high-electron-mobility-transistor\/#primaryimage"},"image":{"@id":"https:\/\/silvaco.com\/zh-hans\/simulation-standard-zh-hans\/breakdown-analysis-of-a-body-contacted-submicron-high-electron-mobility-transistor\/#primaryimage"},"thumbnailUrl":"https:\/\/silvaco.com\/wp-content\/uploads\/simulationstandard\/simstd_may_2002_a2-e1611193990544.jpg","datePublished":"2002-05-01T22:05:10+00:00","dateModified":"2026-10-15T21:32:30+00:00","author":{"@id":"https:\/\/silvaco.com\/ja\/#\/schema\/person\/2763eb741ca5ac04477fdff50ed84c80"},"description":"Breakdown Analysis of a Body-Contacted Submicron High Electron Mobility Transistor","breadcrumb":{"@id":"https:\/\/silvaco.com\/zh-hans\/simulation-standard-zh-hans\/breakdown-analysis-of-a-body-contacted-submicron-high-electron-mobility-transistor\/#breadcrumb"},"inLanguage":"zh-CN","potentialAction":[{"@type":"ReadAction","target":["https:\/\/silvaco.com\/zh-hans\/simulation-standard-zh-hans\/breakdown-analysis-of-a-body-contacted-submicron-high-electron-mobility-transistor\/"]}]},{"@type":"ImageObject","inLanguage":"zh-CN","@id":"https:\/\/silvaco.com\/zh-hans\/simulation-standard-zh-hans\/breakdown-analysis-of-a-body-contacted-submicron-high-electron-mobility-transistor\/#primaryimage","url":"https:\/\/silvaco.com\/wp-content\/uploads\/simulationstandard\/simstd_may_2002_a2-e1611193990544.jpg","contentUrl":"https:\/\/silvaco.com\/wp-content\/uploads\/simulationstandard\/simstd_may_2002_a2-e1611193990544.jpg","width":617,"height":800},{"@type":"BreadcrumbList","@id":"https:\/\/silvaco.com\/zh-hans\/simulation-standard-zh-hans\/breakdown-analysis-of-a-body-contacted-submicron-high-electron-mobility-transistor\/#breadcrumb","itemListElement":[{"@type":"ListItem","position":1,"name":"Home","item":"https:\/\/silvaco.com\/zh-hans\/%e9%a6%96%e9%a1%b5\/"},{"@type":"ListItem","position":2,"name":"Breakdown Analysis of a Body-Contacted Submicron High Electron Mobility Transistor"}]},{"@type":"WebSite","@id":"https:\/\/silvaco.com\/ja\/#website","url":"https:\/\/silvaco.com\/ja\/","name":"Silvaco","description":"","potentialAction":[{"@type":"SearchAction","target":{"@type":"EntryPoint","urlTemplate":"https:\/\/silvaco.com\/ja\/?s={search_term_string}"},"query-input":{"@type":"PropertyValueSpecification","valueRequired":true,"valueName":"search_term_string"}}],"inLanguage":"zh-CN"},{"@type":"Person","@id":"https:\/\/silvaco.com\/ja\/#\/schema\/person\/2763eb741ca5ac04477fdff50ed84c80","name":"Casey Molver","image":{"@type":"ImageObject","inLanguage":"zh-CN","@id":"https:\/\/secure.gravatar.com\/avatar\/3dba2e48e0c4a977ea23fa75d38750a7763843df78307070478340a2517b8d6b?s=96&d=blank&r=g","url":"https:\/\/secure.gravatar.com\/avatar\/3dba2e48e0c4a977ea23fa75d38750a7763843df78307070478340a2517b8d6b?s=96&d=blank&r=g","contentUrl":"https:\/\/secure.gravatar.com\/avatar\/3dba2e48e0c4a977ea23fa75d38750a7763843df78307070478340a2517b8d6b?s=96&d=blank&r=g","caption":"Casey Molver"},"url":"https:\/\/silvaco.com\/zh-hans\/author\/caseym\/"}]}},"_links":{"self":[{"href":"https:\/\/silvaco.com\/zh-hans\/wp-json\/wp\/v2\/posts\/36804","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/silvaco.com\/zh-hans\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/silvaco.com\/zh-hans\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/silvaco.com\/zh-hans\/wp-json\/wp\/v2\/users\/12"}],"replies":[{"embeddable":true,"href":"https:\/\/silvaco.com\/zh-hans\/wp-json\/wp\/v2\/comments?post=36804"}],"version-history":[{"count":3,"href":"https:\/\/silvaco.com\/zh-hans\/wp-json\/wp\/v2\/posts\/36804\/revisions"}],"predecessor-version":[{"id":955902,"href":"https:\/\/silvaco.com\/zh-hans\/wp-json\/wp\/v2\/posts\/36804\/revisions\/955902"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/silvaco.com\/zh-hans\/wp-json\/wp\/v2\/media\/22216"}],"wp:attachment":[{"href":"https:\/\/silvaco.com\/zh-hans\/wp-json\/wp\/v2\/media?parent=36804"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/silvaco.com\/zh-hans\/wp-json\/wp\/v2\/categories?post=36804"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/silvaco.com\/zh-hans\/wp-json\/wp\/v2\/tags?post=36804"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}