{"id":36633,"date":"2004-01-01T00:00:41","date_gmt":"2004-01-01T00:00:41","guid":{"rendered":"https:\/\/silvaco.com\/%e6%9c%aa%e5%88%86%e7%b1%bb\/stress-effect-model-in-bsim3v3-model\/"},"modified":"2026-10-15T14:24:18","modified_gmt":"2026-10-15T21:24:18","slug":"stress-effect-model-in-bsim3v3-model","status":"publish","type":"post","link":"https:\/\/silvaco.com\/zh-hans\/simulation-standard-zh-hans\/stress-effect-model-in-bsim3v3-model\/","title":{"rendered":"Stress Effect Model in BSIM3v3 Model"},"content":{"rendered":"

Stress Effect Model in BSIM3v3 Model<\/h1>\n

Stress effect models are now implemented in major models such as BSIM4 or HiSIM. The need for evermore accurate models with a strong relation to technology is accute. Since BSIM3v3 is still a widely-used model and has not been totally replaced by its successor, an improvement was made to the model in\u00a0SmartSpice<\/strong><\/em>\u00a0to fulfill customers need for stress effect equations.<\/p>\n

Background<\/strong><\/p>\n

The stress effect became important for simulation because of more and more shrinking processes. The smaller devices now require efficient isolation techniques. One of them is Shallow Trench Isolation (STI), mainly used with strain channel materials.<\/p>\n

Shallow Trench Isolation is used to replace LOCOS, as shown on the schematic in Figure 1.<\/p>\n

This particular process induces a mechanical stress on the device structure. Because of this behavior, device performance is related to the dimension of the active area, as well as the location of the device.<\/p>\n

It has been shown that :<\/p>\n