{"id":36574,"date":"2004-08-01T00:05:08","date_gmt":"2004-08-01T00:05:08","guid":{"rendered":"https:\/\/silvaco.com\/%e6%9c%aa%e5%88%86%e7%b1%bb\/a-new-efficient-quantum-method-the-bohm-quantum-potential-model\/"},"modified":"2021-10-13T10:36:39","modified_gmt":"2021-10-13T17:36:39","slug":"a-new-efficient-quantum-method-the-bohm-quantum-potential-model","status":"publish","type":"post","link":"https:\/\/silvaco.com\/zh-hans\/simulation-standard-zh-hans\/a-new-efficient-quantum-method-the-bohm-quantum-potential-model\/","title":{"rendered":"A New Efficient Quantum Method: The Bohm Quantum Potential Model"},"content":{"rendered":"<div id='template_overview'  class='avia-section main_color avia-section-small avia-no-border-styling  avia-bg-style-scroll  avia-builder-el-0  el_before_av_section  avia-builder-el-first   container_wrap fullsize' style='background-color: #ffffff;  margin-top:0px; margin-bottom:0px; '  ><div class='container' ><main  role=\"main\" itemprop=\"mainContentOfPage\"  class='template-page content  av-content-full alpha units'><div class='post-entry post-entry-type-page post-entry-36574'><div class='entry-content-wrapper clearfix'>\n<div class='flex_column_table av-equal-height-column-flextable -flextable' style='margin-top:20px; margin-bottom:0px; '><div class=\"flex_column av_three_fourth  flex_column_table_cell av-equal-height-column av-align-top first  avia-builder-el-1  el_before_av_one_fourth  avia-builder-el-first  \" style='padding:0px 0px 0px 0px ; border-radius:0px; '><section class=\"av_textblock_section \"  itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock  '   itemprop=\"text\" ><h1>A New Efficient Quantum Method: The Bohm Quantum Potential Model<\/h1>\n<p>This article presents a new approach to model the quantum confinement of carriers in MOSFET or heterostructure. SILVACO has already included in its device simulator\u00a0<strong><em>ATLAS<\/em><\/strong>, a Schr\u00f6dinger-Poisson solver and Density-Gradient model. The Schr\u00f6dinger-Poisson (SP) solver is the most accurate approach to calculate the quantum confinement in semiconductor but it cannot predict the currents flowing in the device. To overcome this limitation,\u00a0<strong><em>ATLAS<\/em><\/strong>\u00a0provides a Density Gradient (DG) model [1]. It allows the user to predict both the quantum confinement and the drift-diffusion currents along with the Fermi-Dirac statistics for a 2D structure. However this model exhibits poor convergence in 3D and with the hydrodynamic transport. Therefore, in collaboration with the University of Pisa, SILVACO has introduced in\u00a0<strong><em>ATLAS<\/em><\/strong>, a new approach called Effective Bohm Quantum Potential (BQP) model. This model presented at SISPAD 2004 conference [2] exhibits many advantages. It includes two fitting parameters which ensure a good calibration for silicon or non-silicon materials, planar or non-planar devices. It is numerically stable and robust, and independent of the transport models used. Therefore it has been successfully implemented and tested in\u00a0<strong><em>ATLAS<\/em><\/strong>. The table below summarizes the different models available in\u00a0<strong><em>ATLAS<\/em><\/strong>\u00a0related to the dimensionality and the transport models.<\/p>\n<p><span class=\"regular\">Historically, the definition of an effective quantum potential is Bohm\u2019s interpretation of quantum mechanics [3], and has generated other more recent derivations based on a first order expansion of the Wigner equation [4], or on the so-called density gradient approach [5]. The BQP model has a few advantages: it does not depend on the transport model (drift-diffusion or hydrodynamic); Fermi-Dirac statistics can be straightforwardly included; it provides two parameters for calibration, whereas the Density Gradient has only one fitting parameter; finally, it exhibits very stable convergence properties.<\/span><\/p>\n<p>The definition of the effective quantum potential\u00a0<em>Q<sub>eff<\/sub><\/em>\u00a0is derived from a weighted average of the Bohm quantum potentials seen by all single particle wavefunctions<\/p>\n<\/div><\/section><\/div><div class='av-flex-placeholder'><\/div><div class=\"flex_column av_one_fourth  flex_column_table_cell av-equal-height-column av-align-top av-zero-column-padding   avia-builder-el-3  el_after_av_three_fourth  avia-builder-el-last  \" style='border-radius:0px; ' id=\"whitepaper\" ><p><div  class='avia-builder-widget-area clearfix  avia-builder-el-4  el_before_av_image  avia-builder-el-first '><div id=\"nav_menu-29\" class=\"widget clearfix widget_nav_menu\"><div class=\"menu-simulation-standard-side-menu-chinese-simplified-container\"><ul id=\"menu-simulation-standard-side-menu-chinese-simplified\" class=\"menu\"><li id=\"menu-item-35571\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-35571\"><a href=\"https:\/\/silvaco.com\/zh-hans\/technical-library\/simulation-standard\/\">Simulation Standard<\/a><\/li>\n<\/ul><\/div><\/div><\/div><br \/>\n<div  class='avia-image-container  av-styling-    avia-builder-el-5  el_after_av_sidebar  el_before_av_button  avia-align-center '  itemprop=\"image\" itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/ImageObject\"  ><div class='avia-image-container-inner'><div class='avia-image-overlay-wrap'><a href=\"\/dynamicweb\/jsp\/downloads\/DownloadDocStepsAction.do?req=download&amp;nm=simstd_aug_2004_a2.pdf\" class='avia_image' target=\"_blank\" rel=\"noopener noreferrer\"><img decoding=\"async\" width=\"644\" height=\"800\" class='wp-image-21640 avia-img-lazy-loading-not-21640 avia_image' src=\"https:\/\/silvaco.com\/wp-content\/uploads\/simulationstandard\/simstd_aug_2004_a2-e1611193566317.jpg\" alt='' title='simstd_aug_2004_a2'  itemprop=\"thumbnailUrl\"  \/><\/a><\/div><\/div><\/div><br \/>\n<div  class='avia-button-wrap avia-button-center  avia-builder-el-6  el_after_av_image  avia-builder-el-last ' ><a href='\/dynamicweb\/jsp\/downloads\/DownloadDocStepsAction.do?req=download&amp;nm=simstd_Q4_2019_a4.pdf' class='avia-button  avia-color-grey   avia-icon_select-yes-right-icon avia-size-small avia-position-center ' target=\"_blank\" rel=\"noopener noreferrer\"><span class='avia_iconbox_title' >Download Simulation Standard<\/span><span class='avia_button_icon avia_button_icon_right' aria-hidden='true' data-av_icon='\ue875' data-av_iconfont='entypo-fontello'><\/span><\/a><\/div><\/p><\/div><\/div><!--close column table wrapper. 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Autoclose: 1 -->\n<\/p>\n","protected":false},"excerpt":{"rendered":"<p>This article presents a new approach to model the quantum confinement of carriers in MOSFET or heterostructure. SILVACO has already included in its device simulator\u00a0ATLAS, a Schr\u00f6dinger-Poisson solver and Density-Gradient model<\/p>\n","protected":false},"author":3,"featured_media":21640,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[7723],"tags":[],"yoast_head":"<!-- This site is optimized with the Yoast SEO Premium plugin v24.0 (Yoast SEO v24.0) - https:\/\/yoast.com\/wordpress\/plugins\/seo\/ -->\n<title>A New Efficient Quantum Method: The Bohm Quantum Potential Model - Silvaco<\/title>\n<meta name=\"description\" content=\"This article presents a new approach to model the quantum confinement of carriers in MOSFET or heterostructure. 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