{"id":36549,"date":"2004-11-01T00:04:40","date_gmt":"2004-11-01T00:04:40","guid":{"rendered":"https:\/\/silvaco.com\/%e6%9c%aa%e5%88%86%e7%b1%bb\/two-dimensional-device-simulation-of-the-ingaas-inp-avalanche-photodiodes\/"},"modified":"2021-10-13T10:36:06","modified_gmt":"2021-10-13T17:36:06","slug":"two-dimensional-device-simulation-of-the-ingaas-inp-avalanche-photodiodes","status":"publish","type":"post","link":"https:\/\/silvaco.com\/zh-hans\/simulation-standard-zh-hans\/two-dimensional-device-simulation-of-the-ingaas-inp-avalanche-photodiodes\/","title":{"rendered":"Two-Dimensional Device Simulation of the InGaAs\/InP Avalanche Photodiodes"},"content":{"rendered":"<div id='template_overview'  class='avia-section main_color avia-section-small avia-no-border-styling  avia-bg-style-scroll  avia-builder-el-0  el_before_av_section  avia-builder-el-first   container_wrap fullsize' style='background-color: #ffffff;  margin-top:0px; margin-bottom:0px; '  ><div class='container' ><main  role=\"main\" itemprop=\"mainContentOfPage\"  class='template-page content  av-content-full alpha units'><div class='post-entry post-entry-type-page post-entry-36549'><div class='entry-content-wrapper clearfix'>\n<div class='flex_column_table av-equal-height-column-flextable -flextable' style='margin-top:20px; margin-bottom:0px; '><div class=\"flex_column av_three_fourth  flex_column_table_cell av-equal-height-column av-align-top first  avia-builder-el-1  el_before_av_one_fourth  avia-builder-el-first  \" style='padding:0px 0px 0px 0px ; border-radius:0px; '><section class=\"av_textblock_section \"  itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock  '   itemprop=\"text\" ><h1>Two-Dimensional Device Simulation of the InGaAs\/InP Avalanche Photodiodes<\/h1>\n<p class=\"feature\"><strong>1. Introduction<\/strong><\/p>\n<p>The high gain, and high gain-bandwidth product of the avalanche photodiodes is one of the key device for the long distance optical communication systems. For the 0.92-1.65um wavelength range, the narrow bandgap materials, like InGaAs(0.77eV), are used as the absorption medium. And the breakdown location is a major issue to design of the APD\u2019s. In order for the device to operate with high gain and low noise[1], the design of the guard ring to suppress edge breakdown is important.<\/p>\n<p>The object of this article is to get the multiplication[2], the leakage current under the dark and the illuminated current[3] was simulated. And the other important factor of the cut-off frequency calculated by the numerical device simulator\u00a0<em><strong>ATLAS<\/strong><\/em>.<\/p>\n<p class=\"feature\"><strong>2. Device Structure and Models<\/strong><\/p>\n<p>In order to simulate of the APD\u2019s, the thickness and doping level used conventional APD device. The dark current and illuminated current is very depend on the absorbed layer and the doping profile. And the multiplication layer thickness is the very key parameter of the breakdown voltage and position of the avalanche. Here the simple APD\u2019s structure showed with guard ring as Figure 1.<\/p>\n<\/div><\/section><\/div><div class='av-flex-placeholder'><\/div><div class=\"flex_column av_one_fourth  flex_column_table_cell av-equal-height-column av-align-top av-zero-column-padding   avia-builder-el-3  el_after_av_three_fourth  avia-builder-el-last  \" style='border-radius:0px; ' id=\"whitepaper\" ><p><div  class='avia-builder-widget-area clearfix  avia-builder-el-4  el_before_av_image  avia-builder-el-first '><div id=\"nav_menu-29\" class=\"widget clearfix widget_nav_menu\"><div class=\"menu-simulation-standard-side-menu-chinese-simplified-container\"><ul id=\"menu-simulation-standard-side-menu-chinese-simplified\" class=\"menu\"><li id=\"menu-item-35571\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-35571\"><a href=\"https:\/\/silvaco.com\/zh-hans\/technical-library\/simulation-standard\/\">Simulation Standard<\/a><\/li>\n<\/ul><\/div><\/div><\/div><br \/>\n<div  class='avia-image-container  av-styling-    avia-builder-el-5  el_after_av_sidebar  el_before_av_button  avia-align-center '  itemprop=\"image\" itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/ImageObject\"  ><div class='avia-image-container-inner'><div class='avia-image-overlay-wrap'><a href=\"\/dynamicweb\/jsp\/downloads\/DownloadDocStepsAction.do?req=download&amp;nm=simstd_nov_2004_a3.pdf\" class='avia_image' target=\"_blank\" rel=\"noopener noreferrer\"><img decoding=\"async\" width=\"805\" height=\"1000\" class='wp-image-22375 avia-img-lazy-loading-not-22375 avia_image' src=\"https:\/\/silvaco.com\/wp-content\/uploads\/simulationstandard\/simstd_nov_2004_a3-e1611191330858.jpg\" alt='' title='simstd_nov_2004_a3'  itemprop=\"thumbnailUrl\"  \/><\/a><\/div><\/div><\/div><br \/>\n<div  class='avia-button-wrap avia-button-center  avia-builder-el-6  el_after_av_image  avia-builder-el-last ' ><a href='\/dynamicweb\/jsp\/downloads\/DownloadDocStepsAction.do?req=download&amp;nm=simstd_nov_2004_a3.pdf' class='avia-button  avia-color-grey   avia-icon_select-yes-right-icon avia-size-small avia-position-center ' target=\"_blank\" rel=\"noopener noreferrer\"><span class='avia_iconbox_title' >Download Simulation Standard<\/span><span class='avia_button_icon avia_button_icon_right' aria-hidden='true' data-av_icon='\ue875' data-av_iconfont='entypo-fontello'><\/span><\/a><\/div><\/p><\/div><\/div><!--close column table wrapper. Autoclose: 1 --><\/div><\/div><\/main><!-- close content main element --><\/div><\/div><div id='av_section_2'  class='avia-section main_color avia-section-small avia-no-border-styling  avia-bg-style-scroll  avia-builder-el-7  el_after_av_section  avia-builder-el-last   container_wrap fullsize' style='background-color: #ffffff;  margin-top:0px; margin-bottom:0px; '  ><div class='container' ><div class='template-page content  av-content-full alpha units'><div class='post-entry post-entry-type-page post-entry-36549'><div class='entry-content-wrapper clearfix'>\n<div class='flex_column_table av-equal-height-column-flextable -flextable' style='margin-top:20px; margin-bottom:0px; '><div class=\"flex_column av_one_full  flex_column_table_cell av-equal-height-column av-align-top first  avia-builder-el-8  avia-builder-el-no-sibling  \" style='padding:0px 0px 0px 0px ; border-radius:0px; '><\/div><\/div><!--close column table wrapper. Autoclose: 1 -->\n<\/p>\n","protected":false},"excerpt":{"rendered":"<p>The high gain, and high gain-bandwidth product of the avalanche photodiodes is one of the key device for the long distance optical communication systems. For the 0.92-1.65um wavelength range, the narrow bandgap materials, like InGaAs(0.77eV), are used as the absorption medium. And the breakdown location is a major issue to design of the APD\u2019s. In order for the device to operate with high gain and low noise[1], the design of the guard ring to suppress edge breakdown is important.<\/p>\n","protected":false},"author":3,"featured_media":22375,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[7723],"tags":[],"yoast_head":"<!-- This site is optimized with the Yoast SEO Premium plugin v24.0 (Yoast SEO v24.0) - https:\/\/yoast.com\/wordpress\/plugins\/seo\/ -->\n<title>Two-Dimensional Device Simulation of the InGaAs\/InP Avalanche Photodiodes - Silvaco<\/title>\n<meta name=\"description\" content=\"The high gain, and high gain-bandwidth product of the avalanche photodiodes is one of the key device for the long distance optical communication systems\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/silvaco.com\/zh-hans\/simulation-standard-zh-hans\/two-dimensional-device-simulation-of-the-ingaas-inp-avalanche-photodiodes\/\" \/>\n<meta property=\"og:locale\" content=\"zh_CN\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"Two-Dimensional Device Simulation of the InGaAs\/InP Avalanche Photodiodes\" \/>\n<meta property=\"og:description\" content=\"The high gain, and high gain-bandwidth product of the avalanche photodiodes is one of the key device for the long distance optical communication systems\" \/>\n<meta property=\"og:url\" content=\"https:\/\/silvaco.com\/zh-hans\/simulation-standard-zh-hans\/two-dimensional-device-simulation-of-the-ingaas-inp-avalanche-photodiodes\/\" \/>\n<meta property=\"og:site_name\" content=\"Silvaco\" \/>\n<meta property=\"article:publisher\" content=\"https:\/\/www.facebook.com\/SilvacoSoftware\/\" \/>\n<meta property=\"article:published_time\" content=\"2004-11-01T00:04:40+00:00\" \/>\n<meta property=\"article:modified_time\" content=\"2021-10-13T17:36:06+00:00\" \/>\n<meta property=\"og:image\" content=\"https:\/\/silvaco.com\/wp-content\/uploads\/simulationstandard\/simstd_nov_2004_a3-e1611191330858.jpg\" \/>\n\t<meta property=\"og:image:width\" content=\"805\" \/>\n\t<meta property=\"og:image:height\" content=\"1000\" \/>\n\t<meta property=\"og:image:type\" content=\"image\/jpeg\" \/>\n<meta name=\"author\" content=\"Erick Castellon\" \/>\n<meta name=\"twitter:card\" content=\"summary_large_image\" \/>\n<meta name=\"twitter:creator\" content=\"@SilvacoSoftware\" \/>\n<meta name=\"twitter:site\" content=\"@SilvacoSoftware\" \/>\n<meta name=\"twitter:label1\" content=\"\u4f5c\u8005\" \/>\n\t<meta name=\"twitter:data1\" content=\"Erick Castellon\" \/>\n\t<meta name=\"twitter:label2\" content=\"\u9884\u8ba1\u9605\u8bfb\u65f6\u95f4\" \/>\n\t<meta name=\"twitter:data2\" content=\"5 \u5206\" \/>\n<script type=\"application\/ld+json\" class=\"yoast-schema-graph\">{\"@context\":\"https:\/\/schema.org\",\"@graph\":[{\"@type\":\"WebPage\",\"@id\":\"https:\/\/silvaco.com\/zh-hans\/simulation-standard-zh-hans\/two-dimensional-device-simulation-of-the-ingaas-inp-avalanche-photodiodes\/\",\"url\":\"https:\/\/silvaco.com\/zh-hans\/simulation-standard-zh-hans\/two-dimensional-device-simulation-of-the-ingaas-inp-avalanche-photodiodes\/\",\"name\":\"Two-Dimensional Device Simulation of the InGaAs\/InP Avalanche Photodiodes - 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