{"id":36497,"date":"2005-11-01T00:05:51","date_gmt":"2005-11-01T00:05:51","guid":{"rendered":"https:\/\/silvaco.com\/%e6%9c%aa%e5%88%86%e7%b1%bb\/how-can-i-create-a-non-planar-structure-using-iii-v-materials-for-device-analysis\/"},"modified":"2021-10-13T10:35:11","modified_gmt":"2021-10-13T17:35:11","slug":"how-can-i-create-a-non-planar-structure-using-iii-v-materials-for-device-analysis","status":"publish","type":"post","link":"https:\/\/silvaco.com\/zh-hans\/simulation-standard-zh-hans\/how-can-i-create-a-non-planar-structure-using-iii-v-materials-for-device-analysis\/","title":{"rendered":"How can I create a non planar structure using III-V materials for Device Analysis"},"content":{"rendered":"
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Hints, Tips and Solutions – November 2005<\/h1>\n

Q.<\/strong>\u00a0How can I create a non planar structure using III-V materials for Device Analysis when the materials I want to use are not in the\u00a0ATHENA<\/em>\u00a0data base.<\/p>\n

A.<\/strong>\u00a0There are many materials in the\u00a0ATLAS<\/em><\/strong>\u00a0device simulator data base that are not in the\u00a0ATHENA<\/em><\/strong>\u00a0database, primarily because most of these exotic materials are usually deposited epitaxially and very little actual processing takes place in terms of implantation, diffusion and heat treatments.<\/p>\n

However, it is often desired to create a device with non vertical side-walls or a device where a non planar realistic deposit of an inter-layer di-electric plays a key role in the device operation. In these circumstances it is necessary to use the\u00a0ATHENA<\/em><\/strong>\u00a0process simulator. However, if the process simulator does not contain the exotic materials of interest in it\u2019s process data base, a user defined material must be used.<\/p>\n

There is a special feature in the Silvaco process simulator,\u00a0ATHENA<\/em><\/strong>\u00a0, which converts unknown user defined materials into known device simulator materials so long as the user defined material is given the exact same name as the known device simulator material.<\/p>\n

All that is required now to complete device construction in the process simulator,\u00a0ATHENA<\/em><\/strong>\u00a0, is to define the dopant materials as either donor or acceptor using the impurity statement.<\/p>\n

An example of the first few lines of an\u00a0ATHENA<\/em><\/strong>\u00a0deck is given below. The example demonstrates how to define the user defined material as both the starting substrate material and as a deposited layer<\/p>\n<\/div><\/section><\/div>

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