{"id":36482,"date":"2006-05-01T00:02:31","date_gmt":"2006-05-01T00:02:31","guid":{"rendered":"https:\/\/silvaco.com\/%e6%9c%aa%e5%88%86%e7%b1%bb\/comparison-of-3-dimensional-quantum-effects-in-nano-devices-using-the-atlas-3d-bqp-model\/"},"modified":"2026-10-15T14:17:27","modified_gmt":"2026-10-15T21:17:27","slug":"comparison-of-3-dimensional-quantum-effects-in-nano-devices-using-the-atlas-3d-bqp-model","status":"publish","type":"post","link":"https:\/\/silvaco.com\/zh-hans\/simulation-standard-zh-hans\/comparison-of-3-dimensional-quantum-effects-in-nano-devices-using-the-atlas-3d-bqp-model\/","title":{"rendered":"Comparison of 3-Dimensional Quantum Effects in Nano Devices Using the Atlas 3D BQP Model"},"content":{"rendered":"<h1>Comparison of 3-Dimensional Quantum Effects in Nano Devices Using the\u00a0<em>ATLAS 3D<\/em>\u00a0BQP Model<\/h1>\n<h3 class=\"feature\">Introduction<\/h3>\n<p>With the MOSFET gate lengths scaling down to sub-20nms many kinds of devices have been proposed and researched such as double-gate, tri-gate, four-gate and gate-all-around (wire) MOSFETs.<\/p>\n<p>In this work, the carrier distribution and capacitance of these 4-types of nano MOSFET were compared using the Bohm Quantum Potential Model [1] in\u00a0<strong><em>ATLAS3D<\/em><\/strong>.<\/p>\n<p><strong>Nanodevice : Geometry and Structure<\/strong><\/p>\n<p>Figure 1, shows the nanodevice structures. (a) is a double-gate MOSFET, (b) is a tri-gate FET, (c) is a four-gate FET, and (d) is a Wire FET. All these structures have a common gate oxide thickness of Tox=1nm, silicon thickness of Tsi=5.6nm (on nanowire the diameter is 5.6nm), gate length of W=5.6nm, and total device length of L=8nm. Also, the doping level used is N<sub>A<\/sub>=1e16 cm<sup>-3<\/sup>\u00a0and N<sub>D<\/sub>=1e20 cm<sup>-3<\/sup>.<\/p>\n<p><strong>Simulation<\/strong><\/p>\n<p>The Bohm Quantum Potential (BQP) model is an expansion of the Wigner equation and calculates the effects of quantum confinement on the electron and hole concentration and C-V curves [1].<\/p>\n<p>As we have 4 different structures, we compared carrier concentration on the center cutplane of the gate as shown in Figure 2.<\/p>\n<p><img loading=\"lazy\" width=\"644\" height=\"800\" src=\"https:\/\/silvaco.com\/wp-content\/uploads\/simulationstandard\/simstd_may_2006_a2-e1611193819972.jpg\" class=\"cleaned-enfold-image\" alt=\"\" decoding=\"async\" loading=\"lazy\" \/><\/p>\n<p><a href=\"https:\/\/silvaco.com\/dynamicweb\/jsp\/downloads\/DownloadDocStepsAction.do?req=download&#038;nm=simstd_may_2006_a2.pdf\" class=\"BGT-btn\" target=\"_blank\" rel=\"noopener noreferrer\">Download Simulation Standard<\/a><\/p>\n","protected":false},"excerpt":{"rendered":"<p>Introduction<\/p>\n<p>With the MOSFET gate lengths scaling down to sub-20nms many kinds of devices have been proposed and researched such as double-gate, tri-gate, four-gate and gate-all-around (wire) MOSFETs.<\/p>\n","protected":false},"author":12,"featured_media":22252,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"inline_featured_image":false,"footnotes":""},"categories":[7723],"tags":[],"class_list":["post-36482","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-simulation-standard-zh-hans","entry","has-media"],"yoast_head":"<!-- This site is optimized with the Yoast SEO Premium plugin v28.7 (Yoast SEO v28.7) - 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