{"id":36481,"date":"2006-05-01T00:03:54","date_gmt":"2006-05-01T00:03:54","guid":{"rendered":"https:\/\/silvaco.com\/%e6%9c%aa%e5%88%86%e7%b1%bb\/evaluating-of-the-avalanche-failure-of-power-mosfets-using-atlas\/"},"modified":"2021-10-13T10:31:16","modified_gmt":"2021-10-13T17:31:16","slug":"evaluating-of-the-avalanche-failure-of-power-mosfets-using-atlas","status":"publish","type":"post","link":"https:\/\/silvaco.com\/zh-hans\/simulation-standard-zh-hans\/evaluating-of-the-avalanche-failure-of-power-mosfets-using-atlas\/","title":{"rendered":"Evaluating of the Avalanche Failure of Power MOSFETs using Atlas"},"content":{"rendered":"
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Evaluating of the Avalanche Failure of Power MOSFETs using\u00a0Atlas<\/em><\/h1>\n

Introduction<\/h3>\n

Power MOSFETs are widely used with an inductive load for S\/W power supplies, DC-DC converters, and so on. But due to high frequency operation, the surge voltage applied to the MOSFETs at turn-off depends on the inductance and parasitic inductance in the circuit. For some operation modes, the pulse width for the turn-on or off will be very short, and the device fails due to the short surge period.<\/p>\n

In this article, the device simulator\u00a0ATLAS<\/em><\/strong>\u00a0was used to to predict the maximum inductive loads and find out the failure current due to the device intrinsic temperature.<\/p>\n

Single Pulse Unclamped Inductive Switching<\/strong><\/p>\n

Figure 1 shows that the single pulse unclamped inductive switching (UIS) test circuit for avalanche testing. Figure 2 shows the traditional operation waveform (avalanche operation waveform)[1].<\/p>\n

The avalance current (IAV<\/sub>) depends on both the inductance value and the direction of the on time (PW). Therefore, to get a high IAV<\/sub>\u00a0a small inductance or a long on time should be chosen.<\/p>\n

From the circuit shown in Figure 1, the single pulse avalanche energy (EAV<\/sub>) can be calculated:<\/p>\n<\/div><\/section><\/div>

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