{"id":36411,"date":"2009-10-01T16:48:33","date_gmt":"2009-10-01T16:48:33","guid":{"rendered":"https:\/\/silvaco.com\/%e6%9c%aa%e5%88%86%e7%b1%bb\/simulating-the-effects-of-stress-strain-on-a-50-nm-silicon-finfet\/"},"modified":"2021-10-13T10:29:43","modified_gmt":"2021-10-13T17:29:43","slug":"simulating-the-effects-of-stress-strain-on-a-50-nm-silicon-finfet","status":"publish","type":"post","link":"https:\/\/silvaco.com\/zh-hans\/simulation-standard-zh-hans\/simulating-the-effects-of-stress-strain-on-a-50-nm-silicon-finfet\/","title":{"rendered":"Simulating the Effects of Stress\/Strain on a 50 nm Silicon FinFET"},"content":{"rendered":"

Simulating the Effects of Stress\/Strain on a 50 nm Silicon FinFET<\/h1>\n

1. Introduction<\/strong><\/p>\n

In modern semiconductor devices, the effects of physical lattice strain are playing an increasingly important role. One reason for this is that as device dimensions have shrunk, strains due to lattice mismatch or differences in thermal expansion have become more prevalent. Another is that strain has become an important tool in modifying and enhancing the electrical properties of the semiconductor materials [1]. Large strain induced gains in both electron and hole mobilities have been reported [2][3]. In this article, we will show how SILVACO tools can be used to simulate the creation of a 3D FinFET using VICTORY CELL, calculate the internal strains using VICTORY STRESS, and analyze its electrical characteristics using VICTORY DEVICE.<\/p>\n

\"\"<\/p>\n","protected":false},"excerpt":{"rendered":"

In modern semiconductor devices, the effects of physical lattice strain are playing an increasingly important role. One reason for this is that as device dimensions have shrunk, strains due to lattice mismatch or differences in thermal expansion have become more prevalent. Another is that strain has become an important tool in modifying and enhancing the electrical properties of the semiconductor materials [1]. Large strain induced gains in both electron and hole mobilities have been reported [2][3]. In this article, we will show how SILVACO tools can be used to simulate the creation of a 3D FinFET using VICTORY CELL, calculate the internal strains using VICTORY STRESS, and analyze its electrical characteristics using VICTORY DEVICE.<\/p>\n","protected":false},"author":5,"featured_media":19621,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"inline_featured_image":false,"footnotes":""},"categories":[7723],"tags":[],"class_list":["post-36411","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-simulation-standard-zh-hans","entry","has-media"],"yoast_head":"\nSimulating the Effects of Stress\/Strain on a 50 nm Silicon FinFET - Silvaco<\/title>\n<meta name=\"description\" content=\"In modern semiconductor devices, the effects of physical lattice strain are playing an increasingly important role.\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/silvaco.com\/zh-hans\/simulation-standard-zh-hans\/simulating-the-effects-of-stress-strain-on-a-50-nm-silicon-finfet\/\" \/>\n<meta property=\"og:locale\" content=\"zh_CN\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"Simulating the Effects of Stress\/Strain on a 50 nm Silicon FinFET\" \/>\n<meta property=\"og:description\" content=\"In modern semiconductor devices, the effects of physical lattice strain are playing an increasingly important role.\" \/>\n<meta property=\"og:url\" content=\"https:\/\/silvaco.com\/zh-hans\/simulation-standard-zh-hans\/simulating-the-effects-of-stress-strain-on-a-50-nm-silicon-finfet\/\" \/>\n<meta property=\"og:site_name\" content=\"Silvaco\" \/>\n<meta property=\"article:publisher\" content=\"https:\/\/www.facebook.com\/SilvacoSoftware\/\" \/>\n<meta property=\"article:published_time\" content=\"2009-10-01T16:48:33+00:00\" \/>\n<meta property=\"article:modified_time\" content=\"2021-10-13T17:29:43+00:00\" \/>\n<meta property=\"og:image\" content=\"https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/simstd_Q4_2009_a1.jpg\" \/>\n\t<meta property=\"og:image:width\" content=\"782\" \/>\n\t<meta property=\"og:image:height\" content=\"1012\" \/>\n\t<meta property=\"og:image:type\" content=\"image\/jpeg\" \/>\n<meta name=\"author\" content=\"Ingrid Schwarz\" \/>\n<meta name=\"twitter:card\" content=\"summary_large_image\" \/>\n<meta name=\"twitter:creator\" content=\"@SilvacoSoftware\" \/>\n<meta name=\"twitter:site\" content=\"@SilvacoSoftware\" \/>\n<meta name=\"twitter:label1\" content=\"\u4f5c\u8005\" \/>\n\t<meta name=\"twitter:data1\" content=\"Ingrid Schwarz\" \/>\n\t<meta name=\"twitter:label2\" content=\"\u9884\u8ba1\u9605\u8bfb\u65f6\u95f4\" \/>\n\t<meta name=\"twitter:data2\" content=\"1 minute\" \/>\n<script type=\"application\/ld+json\" class=\"yoast-schema-graph\">{\"@context\":\"https:\\\/\\\/schema.org\",\"@graph\":[{\"@type\":\"Article\",\"@id\":\"https:\\\/\\\/silvaco.com\\\/zh-hans\\\/simulation-standard-zh-hans\\\/simulating-the-effects-of-stress-strain-on-a-50-nm-silicon-finfet\\\/#article\",\"isPartOf\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/zh-hans\\\/simulation-standard-zh-hans\\\/simulating-the-effects-of-stress-strain-on-a-50-nm-silicon-finfet\\\/\"},\"author\":{\"name\":\"Ingrid Schwarz\",\"@id\":\"https:\\\/\\\/silvaco.com\\\/#\\\/schema\\\/person\\\/f85f880bc8a7ce823b36a9072e1f0a29\"},\"headline\":\"Simulating the Effects of Stress\\\/Strain on a 50 nm Silicon FinFET\",\"datePublished\":\"2009-10-01T16:48:33+00:00\",\"dateModified\":\"2021-10-13T17:29:43+00:00\",\"mainEntityOfPage\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/zh-hans\\\/simulation-standard-zh-hans\\\/simulating-the-effects-of-stress-strain-on-a-50-nm-silicon-finfet\\\/\"},\"wordCount\":135,\"image\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/zh-hans\\\/simulation-standard-zh-hans\\\/simulating-the-effects-of-stress-strain-on-a-50-nm-silicon-finfet\\\/#primaryimage\"},\"thumbnailUrl\":\"https:\\\/\\\/silvaco.com\\\/wp-content\\\/uploads\\\/2020\\\/03\\\/simstd_Q4_2009_a1.jpg\",\"articleSection\":[\"Simulation Standard\"],\"inLanguage\":\"zh-CN\"},{\"@type\":\"WebPage\",\"@id\":\"https:\\\/\\\/silvaco.com\\\/zh-hans\\\/simulation-standard-zh-hans\\\/simulating-the-effects-of-stress-strain-on-a-50-nm-silicon-finfet\\\/\",\"url\":\"https:\\\/\\\/silvaco.com\\\/zh-hans\\\/simulation-standard-zh-hans\\\/simulating-the-effects-of-stress-strain-on-a-50-nm-silicon-finfet\\\/\",\"name\":\"Simulating the Effects of Stress\\\/Strain on a 50 nm Silicon FinFET - 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