{"id":36359,"date":"2011-07-01T16:57:07","date_gmt":"2011-07-01T16:57:07","guid":{"rendered":"https:\/\/silvaco.com\/%e6%9c%aa%e5%88%86%e7%b1%bb\/simulation-of-transient-diffusion-enhancement-of-boron-with-victory-process-in-3d-with-the-plus-one-implantation-damage-model-and-the-five-stream-diffusion-model\/"},"modified":"2021-10-13T10:24:04","modified_gmt":"2021-10-13T17:24:04","slug":"simulation-of-transient-diffusion-enhancement-of-boron-with-victory-process-in-3d-with-the-plus-one-implantation-damage-model-and-the-five-stream-diffusion-model","status":"publish","type":"post","link":"https:\/\/silvaco.com\/zh-hans\/simulation-standard-zh-hans\/simulation-of-transient-diffusion-enhancement-of-boron-with-victory-process-in-3d-with-the-plus-one-implantation-damage-model-and-the-five-stream-diffusion-model\/","title":{"rendered":"Simulation of Transient Diffusion Enhancement of Boron with VICTORY Process in 3D, with the Plus-One Implantation Damage Model and the Five-Stream Diffusion Model"},"content":{"rendered":"
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Simulation of Transient Diffusion Enhancement of Boron with VICTORY Process in 3D, with the Plus-One Implantation Damage Model and the Five-Stream Diffusion Model<\/h1>\n

1. Introduction<\/strong><\/p>\n

VICTORY Process is a 3D process simulation tool which allows for an accurate simulation of the doping distributions in semiconductor devices. It is able to simulate both the insertion of the doping atoms by ion implantation and their subsequent redistribution by thermal treatment.<\/p>\n

During thermal treatment the motion of the doping atoms is assisted by point-defects in semiconductor material. When the point-defects are in thermal equilibrium and hence the point-defect concentrations are rather low, the effective diffusivity of the doping atoms is also low. In this case a significant redistribution of doping atoms can only be observed after annealing for several minutes and only when the annealing temperature is high. On the other hand, in the presence of high point-defect concentrations, the effective diffusivity of the doping atoms can be dramatically enhanced so that a significant redistribution of doping atoms can be observed after just a few seconds of annealing and at relatively low annealing temperatures. Diffusion enhancement caused by the presence of high concentrations of point-defects can only be simulated by means of diffusion models which take point-defects into account in the problem formulation [1][2][3].<\/p>\n<\/div><\/section><\/div>

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