{"id":36280,"date":"2014-04-01T19:23:36","date_gmt":"2014-04-01T19:23:36","guid":{"rendered":"https:\/\/silvaco.com\/%e6%9c%aa%e5%88%86%e7%b1%bb\/generally-applicable-degradation-model-for-silicon-mos-devices\/"},"modified":"2026-10-16T08:22:31","modified_gmt":"2026-10-16T15:22:31","slug":"generally-applicable-degradation-model-for-silicon-mos-devices","status":"publish","type":"post","link":"https:\/\/silvaco.com\/zh-hans\/simulation-standard-zh-hans\/generally-applicable-degradation-model-for-silicon-mos-devices\/","title":{"rendered":"Generally Applicable Degradation Model for Silicon MOS Devices"},"content":{"rendered":"<h1 align=\"left\"><strong>Generally Applicable Degradation Model for Silicon MOS Devices<\/strong><\/h1>\n<p><strong>Introduction<\/strong><\/p>\n<p>The main cause of operational degradation in MOS devices is believed to be due to the buildup of charge at the Silicon-Oxide interface. This leads to reduced saturation currents and threshold voltage shifts in MOSFET devices. Physics-based models of the degradation process typically consider the breaking of Si-H bonds (depassivation) at the Silicon-Oxide interface to be the main cause of the operational degradation. A new general model of Si-H bond breaking has recently been included in Atlas, adding to the Silvaco TCAD portfolio of degradation models[1].<\/p>\n<p>This article presents the theory of the new model, and describes its implementation in Atlas. The model is then applied to a simple MOSFET to illustrate the features of the model. Finally it is applied to model a realistic MOSFET for which experimental degradation data are available. It is able to simulate reasonably well the unusual behavior of the degradation as a function of stressing time.<\/p>\n<p><img loading=\"lazy\" width=\"782\" height=\"1012\" src=\"https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/simstd_Q2_2014_a1.jpg\" class=\"cleaned-enfold-image\" alt=\"\" decoding=\"async\" loading=\"lazy\" srcset=\"https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/simstd_Q2_2014_a1.jpg 782w, https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/simstd_Q2_2014_a1-232x300.jpg 232w, https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/simstd_Q2_2014_a1-768x994.jpg 768w, https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/simstd_Q2_2014_a1-545x705.jpg 545w, https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/simstd_Q2_2014_a1-29x37.jpg 29w, https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/simstd_Q2_2014_a1-43x55.jpg 43w, https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/simstd_Q2_2014_a1-37x48.jpg 37w\" sizes=\"auto, (max-width: 782px) 100vw, 782px\" \/><\/p>\n<p><a href=\"https:\/\/silvaco.com\/dynamicweb\/jsp\/downloads\/DownloadDocStepsAction.do?req=download&#038;nm=simstd_Q2_2014_a1.pdf\" class=\"BGT-btn\" target=\"_blank\" rel=\"noopener noreferrer\">Download Simulation Standard<\/a><\/p>\n","protected":false},"excerpt":{"rendered":"<p>The main cause of operational degradation in MOS devices is believed to be due to the buildup of charge at the Silicon-Oxide interface. This leads to reduced saturation currents and threshold voltage shifts in MOSFET devices. Physics-based models of the degradation process typically consider the breaking of Si-H bonds (depassivation) at the Silicon-Oxide interface to be the main cause of the operational degradation. A new general model of Si-H bond breaking has recently been included in Atlas, adding to the Silvaco TCAD portfolio of degradation models[1].<\/p>\n","protected":false},"author":5,"featured_media":19744,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"inline_featured_image":false,"footnotes":""},"categories":[7723],"tags":[],"class_list":["post-36280","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-simulation-standard-zh-hans","entry","has-media"],"yoast_head":"<!-- This site is optimized with the Yoast SEO Premium plugin v28.7 (Yoast SEO v28.7) - https:\/\/yoast.com\/product\/yoast-seo-premium-wordpress\/ -->\n<title>Generally Applicable Degradation Model for Silicon MOS Devices - Silvaco<\/title>\n<meta name=\"description\" content=\"The main cause of operational degradation in MOS devices is believed to be due to the buildup of charge at the Silicon-Oxide interface.\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/silvaco.com\/zh-hans\/simulation-standard-zh-hans\/generally-applicable-degradation-model-for-silicon-mos-devices\/\" \/>\n<meta property=\"og:locale\" content=\"zh_CN\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"Generally Applicable Degradation Model for Silicon MOS Devices\" \/>\n<meta property=\"og:description\" content=\"The main cause of operational degradation in MOS devices is believed to be due to the buildup of charge at the Silicon-Oxide interface.\" \/>\n<meta property=\"og:url\" content=\"https:\/\/silvaco.com\/zh-hans\/simulation-standard-zh-hans\/generally-applicable-degradation-model-for-silicon-mos-devices\/\" \/>\n<meta property=\"og:site_name\" content=\"Silvaco\" \/>\n<meta property=\"article:publisher\" content=\"https:\/\/www.facebook.com\/SilvacoSoftware\/\" \/>\n<meta property=\"article:published_time\" content=\"2014-04-01T19:23:36+00:00\" \/>\n<meta property=\"article:modified_time\" content=\"2026-10-16T15:22:31+00:00\" \/>\n<meta property=\"og:image\" content=\"https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/simstd_Q2_2014_a1.jpg\" \/>\n\t<meta property=\"og:image:width\" content=\"782\" \/>\n\t<meta property=\"og:image:height\" content=\"1012\" \/>\n\t<meta property=\"og:image:type\" content=\"image\/jpeg\" \/>\n<meta name=\"author\" content=\"Ingrid Schwarz\" \/>\n<meta name=\"twitter:card\" content=\"summary_large_image\" \/>\n<meta name=\"twitter:creator\" content=\"@SilvacoSoftware\" \/>\n<meta name=\"twitter:site\" content=\"@SilvacoSoftware\" \/>\n<meta name=\"twitter:label1\" content=\"\u4f5c\u8005\" \/>\n\t<meta name=\"twitter:data1\" content=\"Ingrid Schwarz\" \/>\n\t<meta name=\"twitter:label2\" content=\"\u9884\u8ba1\u9605\u8bfb\u65f6\u95f4\" \/>\n\t<meta name=\"twitter:data2\" content=\"1 minute\" \/>\n<script type=\"application\/ld+json\" class=\"yoast-schema-graph\">{\"@context\":\"https:\\\/\\\/schema.org\",\"@graph\":[{\"@type\":\"Article\",\"@id\":\"https:\\\/\\\/silvaco.com\\\/zh-hans\\\/simulation-standard-zh-hans\\\/generally-applicable-degradation-model-for-silicon-mos-devices\\\/#article\",\"isPartOf\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/zh-hans\\\/simulation-standard-zh-hans\\\/generally-applicable-degradation-model-for-silicon-mos-devices\\\/\"},\"author\":{\"name\":\"Ingrid Schwarz\",\"@id\":\"https:\\\/\\\/silvaco.com\\\/#\\\/schema\\\/person\\\/f85f880bc8a7ce823b36a9072e1f0a29\"},\"headline\":\"Generally Applicable Degradation Model for Silicon MOS Devices\",\"datePublished\":\"2014-04-01T19:23:36+00:00\",\"dateModified\":\"2026-10-16T15:22:31+00:00\",\"mainEntityOfPage\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/zh-hans\\\/simulation-standard-zh-hans\\\/generally-applicable-degradation-model-for-silicon-mos-devices\\\/\"},\"wordCount\":172,\"image\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/zh-hans\\\/simulation-standard-zh-hans\\\/generally-applicable-degradation-model-for-silicon-mos-devices\\\/#primaryimage\"},\"thumbnailUrl\":\"https:\\\/\\\/silvaco.com\\\/wp-content\\\/uploads\\\/2020\\\/03\\\/simstd_Q2_2014_a1.jpg\",\"articleSection\":[\"Simulation Standard\"],\"inLanguage\":\"zh-CN\"},{\"@type\":\"WebPage\",\"@id\":\"https:\\\/\\\/silvaco.com\\\/zh-hans\\\/simulation-standard-zh-hans\\\/generally-applicable-degradation-model-for-silicon-mos-devices\\\/\",\"url\":\"https:\\\/\\\/silvaco.com\\\/zh-hans\\\/simulation-standard-zh-hans\\\/generally-applicable-degradation-model-for-silicon-mos-devices\\\/\",\"name\":\"Generally Applicable Degradation Model for Silicon MOS Devices - 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