{"id":36279,"date":"2014-04-01T19:30:31","date_gmt":"2014-04-01T19:30:31","guid":{"rendered":"https:\/\/silvaco.com\/%e6%9c%aa%e5%88%86%e7%b1%bb\/simulations-of-deep-level-transient-spectroscopy-for-4h-sic\/"},"modified":"2021-10-13T10:21:12","modified_gmt":"2021-10-13T17:21:12","slug":"simulations-of-deep-level-transient-spectroscopy-for-4h-sic","status":"publish","type":"post","link":"https:\/\/silvaco.com\/zh-hans\/simulation-standard\/simulations-of-deep-level-transient-spectroscopy-for-4h-sic\/","title":{"rendered":"Simulations of Deep-Level Transient Spectroscopy for 4H-SiC"},"content":{"rendered":"<div id='template_overview'  class='avia-section main_color avia-section-small avia-no-border-styling  avia-bg-style-scroll  avia-builder-el-0  el_before_av_section  avia-builder-el-first   container_wrap fullsize' style='background-color: #ffffff;  margin-top:0px; margin-bottom:0px; '  ><div class='container' ><main  role=\"main\" itemprop=\"mainContentOfPage\"  class='template-page content  av-content-full alpha units'><div class='post-entry post-entry-type-page post-entry-36279'><div class='entry-content-wrapper clearfix'>\n<div class='flex_column_table av-equal-height-column-flextable -flextable' style='margin-top:20px; margin-bottom:0px; '><div class=\"flex_column av_three_fourth  flex_column_table_cell av-equal-height-column av-align-top first  avia-builder-el-1  el_before_av_one_fourth  avia-builder-el-first  \" style='padding:0px 0px 0px 0px ; border-radius:0px; '><section class=\"av_textblock_section \"  itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock  '   itemprop=\"text\" ><h1 align=\"left\">Simulations of Deep-Level Transient Spectroscopy for 4H-SiC<\/h1>\n<p><strong>1. Introduction<\/strong><\/p>\n<p>Silicon carbide is expected to be an excellent device material as high voltage and low-loss power devices. Recently, SBD (Schottky Barrier Diode) and MOSFET based on silicon carbide have been realized [1-3], however, those devices have some problems for its reliability and control of the IV characteristics. The problems are related to defects in the bulk and at the interface of insulator\/semiconductor. The concentration (~5e12[\/cm<sup>3<\/sup>]) of the defects is 2 orders higher than that of silicon [4], and so the defects cause degradation of device characteristics. The investigation of the defect property is important for the improvement of the device performance.<\/p>\n<p>The DLTS (Deep Level Transient Spectroscopy) is one of the method used in measuring material properties such as energy levels and electrons and holes capture cross sections. The device simulator: Atlas can specify an energy level and a capture cross section, and then, can simulate the DLTS signal. So, we can calibrate the defect properties to the DLTS measurement data accurately and the derived defect properties can be applied to the simulations of device characteristics.<\/p>\n<p>In this article, we demonstrate device simulations of the DLTS signal for a SBD structure with the Z1\/Z2 center trap of carbon-vacancy in the bulk.<\/p>\n<\/div><\/section><\/div><div class='av-flex-placeholder'><\/div><div class=\"flex_column av_one_fourth  flex_column_table_cell av-equal-height-column av-align-top av-zero-column-padding   avia-builder-el-3  el_after_av_three_fourth  avia-builder-el-last  \" style='border-radius:0px; ' id=\"whitepaper\" ><p><div  class='avia-builder-widget-area clearfix  avia-builder-el-4  el_before_av_image  avia-builder-el-first '><div id=\"nav_menu-29\" class=\"widget clearfix widget_nav_menu\"><div class=\"menu-simulation-standard-side-menu-chinese-simplified-container\"><ul id=\"menu-simulation-standard-side-menu-chinese-simplified\" class=\"menu\"><li id=\"menu-item-35571\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-35571\"><a href=\"https:\/\/silvaco.com\/zh-hans\/technical-library\/simulation-standard\/\">Simulation Standard<\/a><\/li>\n<\/ul><\/div><\/div><\/div><br \/>\n<div  class='avia-image-container  av-styling-    avia-builder-el-5  el_after_av_sidebar  el_before_av_button  avia-align-center '  itemprop=\"image\" itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/ImageObject\"  ><div class='avia-image-container-inner'><div class='avia-image-overlay-wrap'><a href=\"\/dynamicweb\/jsp\/downloads\/DownloadDocStepsAction.do?req=download&amp;nm=simstd_Q2_2014_a2.pdf \" class='avia_image' target=\"_blank\" rel=\"noopener noreferrer\"><img decoding=\"async\" width=\"232\" height=\"300\" class='wp-image-19741 avia-img-lazy-loading-not-19741 avia_image' src=\"https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/simstd_Q2_2014_a2-232x300.jpg\" alt='' title='simstd_Q2_2014_a2'  itemprop=\"thumbnailUrl\" srcset=\"https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/simstd_Q2_2014_a2-232x300.jpg 232w, https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/simstd_Q2_2014_a2-768x994.jpg 768w, https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/simstd_Q2_2014_a2-545x705.jpg 545w, https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/simstd_Q2_2014_a2-29x37.jpg 29w, https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/simstd_Q2_2014_a2-43x55.jpg 43w, https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/simstd_Q2_2014_a2-37x48.jpg 37w, https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/simstd_Q2_2014_a2.jpg 782w\" sizes=\"(max-width: 232px) 100vw, 232px\" \/><\/a><\/div><\/div><\/div><br \/>\n<div  class='avia-button-wrap avia-button-center  avia-builder-el-6  el_after_av_image  avia-builder-el-last ' ><a href='\/dynamicweb\/jsp\/downloads\/DownloadDocStepsAction.do?req=download&amp;nm=simstd_Q2_2014_a2.pdf ' class='avia-button  avia-color-grey   avia-icon_select-yes-right-icon avia-size-small avia-position-center ' target=\"_blank\" rel=\"noopener noreferrer\"><span class='avia_iconbox_title' >Download Simulation Standard<\/span><span class='avia_button_icon avia_button_icon_right' aria-hidden='true' data-av_icon='\ue875' data-av_iconfont='entypo-fontello'><\/span><\/a><\/div><\/p><\/div><\/div><!--close column table wrapper. Autoclose: 1 --><\/div><\/div><\/main><!-- close content main element --><\/div><\/div><div id='av_section_2'  class='avia-section main_color avia-section-small avia-no-border-styling  avia-bg-style-scroll  avia-builder-el-7  el_after_av_section  avia-builder-el-last   container_wrap fullsize' style='background-color: #ffffff;  margin-top:0px; margin-bottom:0px; '  ><div class='container' ><div class='template-page content  av-content-full alpha units'><div class='post-entry post-entry-type-page post-entry-36279'><div class='entry-content-wrapper clearfix'>\n<div class='flex_column_table av-equal-height-column-flextable -flextable' style='margin-top:20px; margin-bottom:0px; '><div class=\"flex_column av_one_full  flex_column_table_cell av-equal-height-column av-align-top first  avia-builder-el-8  avia-builder-el-no-sibling  \" style='padding:0px 0px 0px 0px ; border-radius:0px; '><\/div><\/div><!--close column table wrapper. Autoclose: 1 -->\n<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Silicon carbide is expected to be an excellent device material as high voltage and low-loss power devices. Recently, SBD (Schottky Barrier Diode) and MOSFET based on silicon carbide have been realized [1-3], however, those devices have some problems for its reliability and control of the IV characteristics. The problems are related to defects in the bulk and at the interface of insulator\/semiconductor. The concentration (~5e12[\/cm3]) of the defects is 2 orders higher than that of silicon [4], and so the defects cause degradation of device characteristics. The investigation of the defect property is important for the improvement of the device performance.<\/p>\n","protected":false},"author":5,"featured_media":19741,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[7723],"tags":[],"yoast_head":"<!-- This site is optimized with the Yoast SEO Premium plugin v24.0 (Yoast SEO v24.0) - https:\/\/yoast.com\/wordpress\/plugins\/seo\/ -->\n<title>Simulations of Deep-Level Transient Spectroscopy for 4H-SiC - Silvaco<\/title>\n<meta name=\"description\" content=\"Silicon carbide is expected to be an excellent device material as high voltage and low-loss power devices.\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/silvaco.com\/zh-hans\/simulation-standard\/simulations-of-deep-level-transient-spectroscopy-for-4h-sic\/\" \/>\n<meta property=\"og:locale\" content=\"zh_CN\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"Simulations of Deep-Level Transient Spectroscopy for 4H-SiC\" \/>\n<meta property=\"og:description\" content=\"Silicon carbide is expected to be an excellent device material as high voltage and low-loss power devices.\" \/>\n<meta property=\"og:url\" content=\"https:\/\/silvaco.com\/zh-hans\/simulation-standard\/simulations-of-deep-level-transient-spectroscopy-for-4h-sic\/\" \/>\n<meta property=\"og:site_name\" content=\"Silvaco\" \/>\n<meta property=\"article:publisher\" content=\"https:\/\/www.facebook.com\/SilvacoSoftware\/\" \/>\n<meta property=\"article:published_time\" content=\"2014-04-01T19:30:31+00:00\" \/>\n<meta property=\"article:modified_time\" content=\"2021-10-13T17:21:12+00:00\" \/>\n<meta property=\"og:image\" content=\"https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/simstd_Q2_2014_a2.jpg\" \/>\n\t<meta property=\"og:image:width\" content=\"782\" \/>\n\t<meta property=\"og:image:height\" content=\"1012\" \/>\n\t<meta property=\"og:image:type\" content=\"image\/jpeg\" \/>\n<meta name=\"author\" content=\"Ingrid Schwarz\" \/>\n<meta name=\"twitter:card\" content=\"summary_large_image\" \/>\n<meta name=\"twitter:creator\" content=\"@SilvacoSoftware\" \/>\n<meta name=\"twitter:site\" content=\"@SilvacoSoftware\" \/>\n<meta name=\"twitter:label1\" content=\"\u4f5c\u8005\" \/>\n\t<meta name=\"twitter:data1\" content=\"Ingrid Schwarz\" \/>\n\t<meta name=\"twitter:label2\" content=\"\u9884\u8ba1\u9605\u8bfb\u65f6\u95f4\" \/>\n\t<meta name=\"twitter:data2\" content=\"5 \u5206\" \/>\n<script type=\"application\/ld+json\" class=\"yoast-schema-graph\">{\"@context\":\"https:\/\/schema.org\",\"@graph\":[{\"@type\":\"WebPage\",\"@id\":\"https:\/\/silvaco.com\/zh-hans\/simulation-standard\/simulations-of-deep-level-transient-spectroscopy-for-4h-sic\/\",\"url\":\"https:\/\/silvaco.com\/zh-hans\/simulation-standard\/simulations-of-deep-level-transient-spectroscopy-for-4h-sic\/\",\"name\":\"Simulations of Deep-Level Transient Spectroscopy for 4H-SiC - 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