{"id":36167,"date":"2016-05-24T16:34:45","date_gmt":"2016-05-24T16:34:45","guid":{"rendered":"https:\/\/silvaco.com\/%e6%9c%aa%e5%88%86%e7%b1%bb\/tcad-simulation-of-wide-bandgap-power-devices\/"},"modified":"2026-10-15T15:00:22","modified_gmt":"2026-10-15T22:00:22","slug":"tcad-simulation-of-wide-bandgap-power-devices","status":"publish","type":"post","link":"https:\/\/silvaco.com\/zh-hans\/tcad-zh-hans\/tcad-webinars-zh-hans\/tcad-simulation-of-wide-bandgap-power-devices\/","title":{"rendered":"TCAD Simulation of Wide Bandgap Power Devices &#8211; Japanese"},"content":{"rendered":"<p><img fetchpriority=\"high\" decoding=\"async\" class=\"cleaned-enfold-image\" src=\"https:\/\/silvaco.com\/wp-content\/uploads\/2018\/12\/Webinar.jpg\" sizes=\"auto, (max-width: 1920px) 100vw, 1920px\" srcset=\"https:\/\/silvaco.com\/wp-content\/uploads\/2018\/12\/Webinar.jpg 1920w, https:\/\/silvaco.com\/wp-content\/uploads\/2018\/12\/Webinar-300x31.jpg 300w, https:\/\/silvaco.com\/wp-content\/uploads\/2018\/12\/Webinar-1030x108.jpg 1030w, https:\/\/silvaco.com\/wp-content\/uploads\/2018\/12\/Webinar-768x80.jpg 768w, https:\/\/silvaco.com\/wp-content\/uploads\/2018\/12\/Webinar-1536x161.jpg 1536w, https:\/\/silvaco.com\/wp-content\/uploads\/2018\/12\/Webinar-1500x157.jpg 1500w, https:\/\/silvaco.com\/wp-content\/uploads\/2018\/12\/Webinar-705x74.jpg 705w, https:\/\/silvaco.com\/wp-content\/uploads\/2018\/12\/Webinar-43x5.jpg 43w, https:\/\/silvaco.com\/wp-content\/uploads\/2018\/12\/Webinar-63x7.jpg 63w, https:\/\/silvaco.com\/wp-content\/uploads\/2018\/12\/Webinar-48x5.jpg 48w\" alt=\"Banner Blue\" width=\"1920\" height=\"201\" \/><\/p>\n<p>Simulation of wide bandgap power devices has always posed convergence challenges. In addition to this the emphasis is shifting to accuracy and calibration of models relative to manufacturing data. This webinar will focus on simulation of silicon carbide (SiC), gallium nitride (GaN) and gallium oxide (Ga2O3) power devices. For each case, simulation results and calibration techniques will be described. Finally, we will also cover stress simulations and introduce upcoming process simulation capabilities for wide bandgap materials.<\/p>\n<h2>What attendees will learn:<\/h2>\n<ul id=\"web-bullet\">\n<li>4H-SiC IEMOSFETsimulation\n<ul>\n<li>Specify the interface defects Dit<\/li>\n<li>A mobility model including the remote-scattering effect due to interface charges<\/li>\n<\/ul>\n<\/li>\n<li>GaN Super HFETsimulation\n<ul>\n<li>Polarization charges: 2DHG, 2DEG at the double-hetero interface GaN\/AlGaN\/GaN<\/li>\n<li>Specification of defects in the GaN buffer layer<\/li>\n<li>Breakdown simulation<\/li>\n<\/ul>\n<\/li>\n<li>Ga<sub>2<\/sub>O<sub>3<\/sub>\u00a0simulation\n<ul>\n<li>Affinity, bandgap (4.8eV)\u3001effective density of state (electron and hole)<\/li>\n<li>How to deal with convergence problems<\/li>\n<\/ul>\n<\/li>\n<li>Stress simulation of wide bandgap devices<\/li>\n<li>Upcoming wide bandgap process simulation capabilities<\/li>\n<\/ul>\n<h3>To view our webinar register to view content.<\/h3>\n<h2>Presenter<\/h2>\n<p><img decoding=\"async\" class=\"size-full wp-image-5031 alignleft\" src=\"\/wp-content\/uploads\/2015\/12\/Fujinaga.jpg\" alt=\"\" width=\"100\" height=\"100\" srcset=\"https:\/\/silvaco.com\/wp-content\/uploads\/2015\/12\/Fujinaga.jpg 100w, https:\/\/silvaco.com\/wp-content\/uploads\/2015\/12\/Fujinaga-80x80.jpg 80w, https:\/\/silvaco.com\/wp-content\/uploads\/2015\/12\/Fujinaga-36x36.jpg 36w, https:\/\/silvaco.com\/wp-content\/uploads\/2015\/12\/Fujinaga-37x37.jpg 37w, https:\/\/silvaco.com\/wp-content\/uploads\/2015\/12\/Fujinaga-55x55.jpg 55w, https:\/\/silvaco.com\/wp-content\/uploads\/2015\/12\/Fujinaga-48x48.jpg 48w\" sizes=\"(max-width: 100px) 100vw, 100px\" \/>Masato Fujinaga serves as the TCAD Applications Engineering Manager at Silvaco Japan and has been working for the company since 2010. From 2006 to 2010 he worked for TCAD international Inc and prior to that from 2003 to 2005, he worked in Renesas Technology Corporation. From 1997 to 2003, he was engaged in TCAD applications such as DRAM\/Flash memory devices and logic transistors for ULSI development. During this time he also participated in the development of 3D TCAD at Semiconductor Leading Edge Technologies Inc.. He started his career in 1985 at the LSI \/ULSI development laboratory of Mitsubishi Electric Corporation, where he engaged in the development of TCAD process and device simulators.<\/p>\n<p>He received his B.S. and M.S. degrees in Physics from Osaka University, Japan, in 1983 and 1985, respectively. In 1996, he received the Ph.D degree in electronics engineering from Osaka University.<\/p>\n<p><strong>When<\/strong>: May 24, 2016<br \/>\n<strong>Where<\/strong>: Online<br \/>\n<strong>Time<\/strong>: 10:00am-11:00am &#8211; (PST)<br \/>\n<strong>Language<\/strong>: Japanese<\/p>\n<h3>WHO SHOULD ATTEND:<\/h3>\n<p>Process engineers, device engineers and researchers working on wide bandgap power device development<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Simulation of wide bandgap power devices has always posed convergence challenges. In addition to this the emphasis is shifting to accuracy and calibration of models relative to manufacturing data. This webinar will focus on simulation of silicon carbide (SiC), gallium nitride (GaN) and gallium oxide (Ga2O3) power devices. For each case, simulation results and calibration [&hellip;]<\/p>\n","protected":false},"author":12,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"inline_featured_image":false,"footnotes":""},"categories":[7729],"tags":[],"class_list":["post-36167","post","type-post","status-publish","format-standard","hentry","category-tcad-webinars-zh-hans","entry"],"yoast_head":"<!-- This site is optimized with the Yoast SEO Premium plugin v28.7 (Yoast SEO v28.7) - https:\/\/yoast.com\/product\/yoast-seo-premium-wordpress\/ -->\n<title>TCAD Simulation of Wide Bandgap Power Devices - Japanese - Silvaco<\/title>\n<meta name=\"description\" content=\"Video TCAD Simulation of Wide Bandgap Power Devices&amp;Webinar\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/silvaco.com\/zh-hans\/tcad-zh-hans\/tcad-webinars-zh-hans\/tcad-simulation-of-wide-bandgap-power-devices\/\" \/>\n<meta property=\"og:locale\" content=\"zh_CN\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"TCAD Simulation of Wide Bandgap Power Devices - Japanese\" \/>\n<meta property=\"og:description\" content=\"Video TCAD Simulation of Wide Bandgap Power Devices&amp;Webinar\" \/>\n<meta property=\"og:url\" content=\"https:\/\/silvaco.com\/zh-hans\/tcad-zh-hans\/tcad-webinars-zh-hans\/tcad-simulation-of-wide-bandgap-power-devices\/\" \/>\n<meta property=\"og:site_name\" content=\"Silvaco\" \/>\n<meta property=\"article:publisher\" content=\"https:\/\/www.facebook.com\/SilvacoSoftware\/\" \/>\n<meta property=\"article:published_time\" content=\"2016-05-24T16:34:45+00:00\" \/>\n<meta property=\"article:modified_time\" content=\"2026-10-15T22:00:22+00:00\" \/>\n<meta property=\"og:image\" content=\"https:\/\/silvaco.com\/wp-content\/uploads\/2018\/12\/Webinar.jpg\" \/>\n<meta name=\"author\" content=\"Casey Molver\" \/>\n<meta name=\"twitter:card\" content=\"summary_large_image\" \/>\n<meta name=\"twitter:creator\" content=\"@SilvacoSoftware\" \/>\n<meta name=\"twitter:site\" content=\"@SilvacoSoftware\" \/>\n<meta name=\"twitter:label1\" content=\"\u4f5c\u8005\" \/>\n\t<meta name=\"twitter:data1\" content=\"Casey Molver\" \/>\n\t<meta name=\"twitter:label2\" content=\"\u9884\u8ba1\u9605\u8bfb\u65f6\u95f4\" \/>\n\t<meta name=\"twitter:data2\" content=\"2 minutes\" \/>\n<script type=\"application\/ld+json\" class=\"yoast-schema-graph\">{\"@context\":\"https:\\\/\\\/schema.org\",\"@graph\":[{\"@type\":\"Article\",\"@id\":\"https:\\\/\\\/silvaco.com\\\/zh-hans\\\/tcad-zh-hans\\\/tcad-webinars-zh-hans\\\/tcad-simulation-of-wide-bandgap-power-devices\\\/#article\",\"isPartOf\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/zh-hans\\\/tcad-zh-hans\\\/tcad-webinars-zh-hans\\\/tcad-simulation-of-wide-bandgap-power-devices\\\/\"},\"author\":{\"name\":\"Casey Molver\",\"@id\":\"https:\\\/\\\/silvaco.com\\\/#\\\/schema\\\/person\\\/2763eb741ca5ac04477fdff50ed84c80\"},\"headline\":\"TCAD Simulation of Wide Bandgap Power Devices &#8211; 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