{"id":36008,"date":"2018-07-19T15:59:39","date_gmt":"2018-07-19T15:59:39","guid":{"rendered":"https:\/\/silvaco.com\/%e6%9c%aa%e5%88%86%e7%b1%bb\/tcad-based-model-extraction-flow-for-gan-hemt-devices-part-1-2\/"},"modified":"2026-10-15T15:01:34","modified_gmt":"2026-10-15T22:01:34","slug":"tcad-based-model-extraction-flow-for-gan-hemt-devices-part-1-2","status":"publish","type":"post","link":"https:\/\/silvaco.com\/zh-hans\/tcad-zh-hans\/tcad-webinars-zh-hans\/tcad-based-model-extraction-flow-for-gan-hemt-devices-part-1-2\/","title":{"rendered":"TCAD-based Model Extraction Flow for GaN HEMT Devices &#8211; Part 1"},"content":{"rendered":"<p><img loading=\"lazy\" width=\"1920\" height=\"201\" src=\"https:\/\/silvaco.com\/wp-content\/uploads\/2018\/12\/Webinar.jpg\" class=\"cleaned-enfold-image\" alt=\"Banner Blue\" decoding=\"async\" loading=\"lazy\" srcset=\"https:\/\/silvaco.com\/wp-content\/uploads\/2018\/12\/Webinar.jpg 1920w, https:\/\/silvaco.com\/wp-content\/uploads\/2018\/12\/Webinar-300x31.jpg 300w, https:\/\/silvaco.com\/wp-content\/uploads\/2018\/12\/Webinar-1030x108.jpg 1030w, https:\/\/silvaco.com\/wp-content\/uploads\/2018\/12\/Webinar-768x80.jpg 768w, https:\/\/silvaco.com\/wp-content\/uploads\/2018\/12\/Webinar-1536x161.jpg 1536w, https:\/\/silvaco.com\/wp-content\/uploads\/2018\/12\/Webinar-1500x157.jpg 1500w, https:\/\/silvaco.com\/wp-content\/uploads\/2018\/12\/Webinar-705x74.jpg 705w, https:\/\/silvaco.com\/wp-content\/uploads\/2018\/12\/Webinar-43x5.jpg 43w, https:\/\/silvaco.com\/wp-content\/uploads\/2018\/12\/Webinar-63x7.jpg 63w, https:\/\/silvaco.com\/wp-content\/uploads\/2018\/12\/Webinar-48x5.jpg 48w\" sizes=\"auto, (max-width: 1920px) 100vw, 1920px\" \/><\/p>\n<p>This webinar will present a model parameter extraction methodology for GaN HEMT devices. This will include a review of the current SPICE compact models for GaN HEMT devices, with a discussion of Verilog-A and simulator built-in models. The input data for the model extraction is generated using TCAD device simulations. Specific advantages of this approach will be discussed, such as the ability to generate data in the absence and presence of self-heating. A SPICE model extraction flow will be illustrated. Various details will be addressed: how to deal with symmetric vs. asymmetric devices, how to set the device structure-related model parameters and how to setup various optimization steps.<\/p>\n<h2>What attendees will learn:<\/h2>\n<ul id=\"web-bullet\">\n<li>Current status of SPICE compact models for GaN devices<\/li>\n<li>Verilog-A versus simulator built-in models<\/li>\n<li>Generating data using TCAD device simulation<\/li>\n<li>Data conversion for parameter extraction<\/li>\n<li>Extraction of SPICE model parameters for GaN HEMT devices\n<ul>\n<li>Prerequisites<\/li>\n<li>Description of the flow<\/li>\n<li>Setting up the optimization steps<\/li>\n<li>Running the flow and illustrating the results<\/li>\n<\/ul>\n<\/li>\n<\/ul>\n<h2>Presenter<\/h2>\n<p><img decoding=\"async\" class=\"wp-image-6449 size-full alignleft\" src=\"\/wp-content\/uploads\/2020\/03\/bogdan.jpg\" alt=\"\" width=\"100\" height=\"100\" srcset=\"https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/bogdan.jpg 100w, https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/bogdan-80x80.jpg 80w, https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/bogdan-36x36.jpg 36w, https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/bogdan-37x37.jpg 37w, https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/bogdan-55x55.jpg 55w, https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/bogdan-48x48.jpg 48w\" sizes=\"(max-width: 100px) 100vw, 100px\" \/>Dr. Bogdan Tudor is Head of Silvaco\u2019s Device Characterization Group. He is responsible for all aspects of the Device Characterization Group\u2019s activities, including R&amp;D, field operations and modeling services. He joined Silvaco in 2017. Prior to joining Silvaco, Dr. Tudor has been a Principal Software Architect at ProPlus Design Solutions for 4 years and before that he was a Senior R&amp;D Engineer with Synopsys for 12 years. Dr. Tudor has an extensive expertise in Device characterization, Compact Model development, MOSFET Aging Reliability Analysis and Software development.<\/p>\n<p>Dr. Tudor holds a MS in Electrical Engineering and a Ph.D. in Microelectronics from the Polytechnic University in Bucharest, Romania.<\/p>\n<p><strong>When<\/strong>: July 19, 2018<br \/>\n<strong>Where<\/strong>: Online<br \/>\n<strong>Time<\/strong>: 10:00am-11:00am-(PST)<br \/>\n<strong>Language<\/strong>: English<\/p>\n<h3>WHO SHOULD ATTEND:<\/h3>\n<p>Academics, engineers, and management who are interested in the modeling and characterization of GaN HEMT devices.<\/p>\n","protected":false},"excerpt":{"rendered":"<p>This webinar will present a model parameter extraction methodology for GaN HEMT devices. This will include a review of the current SPICE compact models for GaN HEMT devices, with a discussion of Verilog-A and simulator built-in models. The input data for the model extraction is generated using TCAD device simulations. Specific advantages of this approach [&hellip;]<\/p>\n","protected":false},"author":12,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"inline_featured_image":false,"footnotes":""},"categories":[7730,7729],"tags":[],"class_list":["post-36008","post","type-post","status-publish","format-standard","hentry","category-modeling-webinars-zh-hans","category-tcad-webinars-zh-hans","entry"],"yoast_head":"<!-- This site is optimized with the Yoast SEO Premium plugin v28.7 (Yoast SEO v28.7) - https:\/\/yoast.com\/product\/yoast-seo-premium-wordpress\/ -->\n<title>TCAD-based Model Extraction Flow for GaN HEMT Devices - Part 1 - Silvaco<\/title>\n<meta name=\"description\" content=\"TCAD-based Model Extraction Flow for GaN HEMT Devices&amp;Part 1\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/silvaco.com\/zh-hans\/tcad-zh-hans\/tcad-webinars-zh-hans\/tcad-based-model-extraction-flow-for-gan-hemt-devices-part-1-2\/\" \/>\n<meta property=\"og:locale\" content=\"zh_CN\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"TCAD-based Model Extraction Flow for GaN HEMT Devices - Part 1\" \/>\n<meta property=\"og:description\" content=\"TCAD-based Model Extraction Flow for GaN HEMT Devices&amp;Part 1\" \/>\n<meta property=\"og:url\" content=\"https:\/\/silvaco.com\/zh-hans\/tcad-zh-hans\/tcad-webinars-zh-hans\/tcad-based-model-extraction-flow-for-gan-hemt-devices-part-1-2\/\" \/>\n<meta property=\"og:site_name\" content=\"Silvaco\" \/>\n<meta property=\"article:publisher\" content=\"https:\/\/www.facebook.com\/SilvacoSoftware\/\" \/>\n<meta property=\"article:published_time\" content=\"2018-07-19T15:59:39+00:00\" \/>\n<meta property=\"article:modified_time\" content=\"2026-10-15T22:01:34+00:00\" \/>\n<meta property=\"og:image\" content=\"https:\/\/silvaco.com\/wp-content\/uploads\/2018\/12\/Webinar.jpg\" \/>\n<meta name=\"author\" content=\"Casey Molver\" \/>\n<meta name=\"twitter:card\" content=\"summary_large_image\" \/>\n<meta name=\"twitter:creator\" content=\"@SilvacoSoftware\" \/>\n<meta name=\"twitter:site\" content=\"@SilvacoSoftware\" \/>\n<meta name=\"twitter:label1\" content=\"\u4f5c\u8005\" \/>\n\t<meta name=\"twitter:data1\" content=\"Casey Molver\" \/>\n\t<meta name=\"twitter:label2\" content=\"\u9884\u8ba1\u9605\u8bfb\u65f6\u95f4\" \/>\n\t<meta name=\"twitter:data2\" content=\"2 minutes\" \/>\n<script type=\"application\/ld+json\" class=\"yoast-schema-graph\">{\"@context\":\"https:\\\/\\\/schema.org\",\"@graph\":[{\"@type\":\"Article\",\"@id\":\"https:\\\/\\\/silvaco.com\\\/zh-hans\\\/tcad-zh-hans\\\/tcad-webinars-zh-hans\\\/tcad-based-model-extraction-flow-for-gan-hemt-devices-part-1-2\\\/#article\",\"isPartOf\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/zh-hans\\\/tcad-zh-hans\\\/tcad-webinars-zh-hans\\\/tcad-based-model-extraction-flow-for-gan-hemt-devices-part-1-2\\\/\"},\"author\":{\"name\":\"Casey Molver\",\"@id\":\"https:\\\/\\\/silvaco.com\\\/#\\\/schema\\\/person\\\/4ff524a4c4ddd2479f80002bf4f50608\"},\"headline\":\"TCAD-based Model Extraction Flow for GaN HEMT Devices &#8211; 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