{"id":35957,"date":"2019-03-26T16:03:57","date_gmt":"2019-03-26T16:03:57","guid":{"rendered":"https:\/\/silvaco.com\/%e6%9c%aa%e5%88%86%e7%b1%bb\/tcad-based-model-extraction-flow-for-gan-hemt-devices-part-2-2\/"},"modified":"2026-10-15T15:01:37","modified_gmt":"2026-10-15T22:01:37","slug":"tcad-based-model-extraction-flow-for-gan-hemt-devices-part-2-2","status":"publish","type":"post","link":"https:\/\/silvaco.com\/zh-hans\/tcad-zh-hans\/tcad-webinars-zh-hans\/tcad-based-model-extraction-flow-for-gan-hemt-devices-part-2-2\/","title":{"rendered":"TCAD-based Model Extraction Flow for GaN HEMT Devices &#8211; Part 2"},"content":{"rendered":"<p><img loading=\"lazy\" width=\"1920\" height=\"201\" src=\"https:\/\/silvaco.com\/wp-content\/uploads\/2018\/12\/Webinar.jpg\" class=\"cleaned-enfold-image\" alt=\"Banner Blue\" decoding=\"async\" loading=\"lazy\" srcset=\"https:\/\/silvaco.com\/wp-content\/uploads\/2018\/12\/Webinar.jpg 1920w, https:\/\/silvaco.com\/wp-content\/uploads\/2018\/12\/Webinar-300x31.jpg 300w, https:\/\/silvaco.com\/wp-content\/uploads\/2018\/12\/Webinar-1030x108.jpg 1030w, https:\/\/silvaco.com\/wp-content\/uploads\/2018\/12\/Webinar-768x80.jpg 768w, https:\/\/silvaco.com\/wp-content\/uploads\/2018\/12\/Webinar-1536x161.jpg 1536w, https:\/\/silvaco.com\/wp-content\/uploads\/2018\/12\/Webinar-1500x157.jpg 1500w, https:\/\/silvaco.com\/wp-content\/uploads\/2018\/12\/Webinar-705x74.jpg 705w, https:\/\/silvaco.com\/wp-content\/uploads\/2018\/12\/Webinar-43x5.jpg 43w, https:\/\/silvaco.com\/wp-content\/uploads\/2018\/12\/Webinar-63x7.jpg 63w, https:\/\/silvaco.com\/wp-content\/uploads\/2018\/12\/Webinar-48x5.jpg 48w\" sizes=\"auto, (max-width: 1920px) 100vw, 1920px\" \/><\/p>\n<p>This webinar represents a continuation of a previously presented parameter extraction methodology for GaN HEMT devices. This will include generating I-V and C-V data through TCAD device simulations. Asymmetric vs. symmetric device structures are considered. The extraction of SPICE model I-V and capacitance parameters will be illustrated in detail, with emphasis on asymmetric devices.<\/p>\n<h2>What attendees will learn:<\/h2>\n<ul id=\"web-bullet\">\n<li>Asymmetric vs. symmetric device GaN HEMT structures<\/li>\n<li>Generating I-V and capacitance data using TCAD device simulation<\/li>\n<li>I-V and C-V data conversion for parameter extraction<\/li>\n<li>Extraction of SPICE model parameters for GaN HEMT devices\n<ul>\n<li>Parameter extraction of asymmetric devices<\/li>\n<li>I-V modeling<\/li>\n<li>Capacitance modeling<\/li>\n<li>Flow description<\/li>\n<li>Running the flow and illustrating the results<\/li>\n<\/ul>\n<\/li>\n<\/ul>\n<h2>Presenter<\/h2>\n<p><img decoding=\"async\" class=\"wp-image-6449 size-full alignleft\" src=\"\/wp-content\/uploads\/2020\/03\/bogdan.jpg\" alt=\"\" width=\"100\" height=\"100\" srcset=\"https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/bogdan.jpg 100w, https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/bogdan-80x80.jpg 80w, https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/bogdan-36x36.jpg 36w, https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/bogdan-37x37.jpg 37w, https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/bogdan-55x55.jpg 55w, https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/bogdan-48x48.jpg 48w\" sizes=\"(max-width: 100px) 100vw, 100px\" \/>Dr. Bogdan Tudor is Head of Silvaco\u2019s Device Characterization Group. He is responsible for all aspects of the Device Characterization Group\u2019s activities, including R&amp;D, field operations and modeling services. He joined Silvaco in 2017. Prior to joining Silvaco, Dr. Tudor has been a Principal Software Architect at ProPlus Design Solutions for 4 years and before that he was a Senior R&amp;D Engineer with Synopsys for 12 years. Dr. Tudor has an extensive expertise in Device characterization, Compact Model development, MOSFET Aging Reliability Analysis and Software development.<\/p>\n<p>Dr. Tudor holds a MS in Electrical Engineering and a Ph.D. in Microelectronics from the Polytechnic University in Bucharest, Romania.<\/p>\n<p><strong>When<\/strong>: March 26, 2019<br \/>\n<strong>Where<\/strong>: Online<br \/>\n<strong>Time<\/strong>: 10:00am-11:00am-(PST)<br \/>\n<strong>Language<\/strong>: English<\/p>\n<h3>WHO SHOULD ATTEND:<\/h3>\n<p>Academics, engineers, and management who are interested in the modeling and characterization of GaN HEMT devices and in DTCO TCAD to SPICE methodology, in general.<\/p>\n","protected":false},"excerpt":{"rendered":"<p>This webinar represents a continuation of a previously presented parameter extraction methodology for GaN HEMT devices. This will include generating I-V and C-V data through TCAD device simulations. Asymmetric vs. symmetric device structures are considered. The extraction of SPICE model I-V and capacitance parameters will be illustrated in detail, with emphasis on asymmetric devices. What [&hellip;]<\/p>\n","protected":false},"author":12,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"inline_featured_image":false,"footnotes":""},"categories":[7730,7729],"tags":[],"class_list":["post-35957","post","type-post","status-publish","format-standard","hentry","category-modeling-webinars-zh-hans","category-tcad-webinars-zh-hans","entry"],"yoast_head":"<!-- This site is optimized with the Yoast SEO Premium plugin v28.7 (Yoast SEO v28.7) - https:\/\/yoast.com\/product\/yoast-seo-premium-wordpress\/ -->\n<title>TCAD-based Model Extraction Flow for GaN HEMT Devices - Part 2 - Silvaco<\/title>\n<meta name=\"description\" content=\"This webinar represents a continuation of a previously presented parameter extraction methodology for GaN HEMT devices\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/silvaco.com\/zh-hans\/tcad-zh-hans\/tcad-webinars-zh-hans\/tcad-based-model-extraction-flow-for-gan-hemt-devices-part-2-2\/\" \/>\n<meta property=\"og:locale\" content=\"zh_CN\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"TCAD-based Model Extraction Flow for GaN HEMT Devices - Part 2\" \/>\n<meta property=\"og:description\" content=\"This webinar represents a continuation of a previously presented parameter extraction methodology for GaN HEMT devices\" \/>\n<meta property=\"og:url\" content=\"https:\/\/silvaco.com\/zh-hans\/tcad-zh-hans\/tcad-webinars-zh-hans\/tcad-based-model-extraction-flow-for-gan-hemt-devices-part-2-2\/\" \/>\n<meta property=\"og:site_name\" content=\"Silvaco\" \/>\n<meta property=\"article:publisher\" content=\"https:\/\/www.facebook.com\/SilvacoSoftware\/\" \/>\n<meta property=\"article:published_time\" content=\"2019-03-26T16:03:57+00:00\" \/>\n<meta property=\"article:modified_time\" content=\"2026-10-15T22:01:37+00:00\" \/>\n<meta property=\"og:image\" content=\"https:\/\/silvaco.com\/wp-content\/uploads\/2018\/12\/Webinar.jpg\" \/>\n<meta name=\"author\" content=\"Casey Molver\" \/>\n<meta name=\"twitter:card\" content=\"summary_large_image\" \/>\n<meta name=\"twitter:creator\" content=\"@SilvacoSoftware\" \/>\n<meta name=\"twitter:site\" content=\"@SilvacoSoftware\" \/>\n<meta name=\"twitter:label1\" content=\"\u4f5c\u8005\" \/>\n\t<meta name=\"twitter:data1\" content=\"Casey Molver\" \/>\n\t<meta name=\"twitter:label2\" content=\"\u9884\u8ba1\u9605\u8bfb\u65f6\u95f4\" \/>\n\t<meta name=\"twitter:data2\" content=\"1 minute\" \/>\n<script type=\"application\/ld+json\" class=\"yoast-schema-graph\">{\"@context\":\"https:\\\/\\\/schema.org\",\"@graph\":[{\"@type\":\"Article\",\"@id\":\"https:\\\/\\\/silvaco.com\\\/zh-hans\\\/tcad-zh-hans\\\/tcad-webinars-zh-hans\\\/tcad-based-model-extraction-flow-for-gan-hemt-devices-part-2-2\\\/#article\",\"isPartOf\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/zh-hans\\\/tcad-zh-hans\\\/tcad-webinars-zh-hans\\\/tcad-based-model-extraction-flow-for-gan-hemt-devices-part-2-2\\\/\"},\"author\":{\"name\":\"Casey Molver\",\"@id\":\"https:\\\/\\\/silvaco.com\\\/#\\\/schema\\\/person\\\/4ff524a4c4ddd2479f80002bf4f50608\"},\"headline\":\"TCAD-based Model Extraction Flow for GaN HEMT Devices &#8211; Part 2\",\"datePublished\":\"2019-03-26T16:03:57+00:00\",\"dateModified\":\"2026-10-15T22:01:37+00:00\",\"mainEntityOfPage\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/zh-hans\\\/tcad-zh-hans\\\/tcad-webinars-zh-hans\\\/tcad-based-model-extraction-flow-for-gan-hemt-devices-part-2-2\\\/\"},\"wordCount\":268,\"image\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/zh-hans\\\/tcad-zh-hans\\\/tcad-webinars-zh-hans\\\/tcad-based-model-extraction-flow-for-gan-hemt-devices-part-2-2\\\/#primaryimage\"},\"thumbnailUrl\":\"https:\\\/\\\/silvaco.com\\\/wp-content\\\/uploads\\\/2018\\\/12\\\/Webinar.jpg\",\"articleSection\":[\"Modeling Webinars\",\"TCAD Webinars\"],\"inLanguage\":\"zh-CN\"},{\"@type\":\"WebPage\",\"@id\":\"https:\\\/\\\/silvaco.com\\\/zh-hans\\\/tcad-zh-hans\\\/tcad-webinars-zh-hans\\\/tcad-based-model-extraction-flow-for-gan-hemt-devices-part-2-2\\\/\",\"url\":\"https:\\\/\\\/silvaco.com\\\/zh-hans\\\/tcad-zh-hans\\\/tcad-webinars-zh-hans\\\/tcad-based-model-extraction-flow-for-gan-hemt-devices-part-2-2\\\/\",\"name\":\"TCAD-based Model Extraction Flow for GaN HEMT Devices - Part 2 - Silvaco\",\"isPartOf\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/#website\"},\"primaryImageOfPage\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/zh-hans\\\/tcad-zh-hans\\\/tcad-webinars-zh-hans\\\/tcad-based-model-extraction-flow-for-gan-hemt-devices-part-2-2\\\/#primaryimage\"},\"image\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/zh-hans\\\/tcad-zh-hans\\\/tcad-webinars-zh-hans\\\/tcad-based-model-extraction-flow-for-gan-hemt-devices-part-2-2\\\/#primaryimage\"},\"thumbnailUrl\":\"https:\\\/\\\/silvaco.com\\\/wp-content\\\/uploads\\\/2018\\\/12\\\/Webinar.jpg\",\"datePublished\":\"2019-03-26T16:03:57+00:00\",\"dateModified\":\"2026-10-15T22:01:37+00:00\",\"author\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/#\\\/schema\\\/person\\\/4ff524a4c4ddd2479f80002bf4f50608\"},\"description\":\"This webinar represents a continuation of a previously presented parameter extraction methodology for GaN HEMT devices\",\"breadcrumb\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/zh-hans\\\/tcad-zh-hans\\\/tcad-webinars-zh-hans\\\/tcad-based-model-extraction-flow-for-gan-hemt-devices-part-2-2\\\/#breadcrumb\"},\"inLanguage\":\"zh-CN\",\"potentialAction\":[{\"@type\":\"ReadAction\",\"target\":[\"https:\\\/\\\/silvaco.com\\\/zh-hans\\\/tcad-zh-hans\\\/tcad-webinars-zh-hans\\\/tcad-based-model-extraction-flow-for-gan-hemt-devices-part-2-2\\\/\"]}]},{\"@type\":\"ImageObject\",\"inLanguage\":\"zh-CN\",\"@id\":\"https:\\\/\\\/silvaco.com\\\/zh-hans\\\/tcad-zh-hans\\\/tcad-webinars-zh-hans\\\/tcad-based-model-extraction-flow-for-gan-hemt-devices-part-2-2\\\/#primaryimage\",\"url\":\"https:\\\/\\\/silvaco.com\\\/wp-content\\\/uploads\\\/2018\\\/12\\\/Webinar.jpg\",\"contentUrl\":\"https:\\\/\\\/silvaco.com\\\/wp-content\\\/uploads\\\/2018\\\/12\\\/Webinar.jpg\"},{\"@type\":\"BreadcrumbList\",\"@id\":\"https:\\\/\\\/silvaco.com\\\/zh-hans\\\/tcad-zh-hans\\\/tcad-webinars-zh-hans\\\/tcad-based-model-extraction-flow-for-gan-hemt-devices-part-2-2\\\/#breadcrumb\",\"itemListElement\":[{\"@type\":\"ListItem\",\"position\":1,\"name\":\"Home\",\"item\":\"https:\\\/\\\/silvaco.com\\\/zh-hans\\\/%e9%a6%96%e9%a1%b5\\\/\"},{\"@type\":\"ListItem\",\"position\":2,\"name\":\"TCAD-based Model Extraction Flow for GaN HEMT Devices &#8211; Part 2\"}]},{\"@type\":\"WebSite\",\"@id\":\"https:\\\/\\\/silvaco.com\\\/#website\",\"url\":\"https:\\\/\\\/silvaco.com\\\/\",\"name\":\"Silvaco\",\"description\":\"\",\"potentialAction\":[{\"@type\":\"SearchAction\",\"target\":{\"@type\":\"EntryPoint\",\"urlTemplate\":\"https:\\\/\\\/silvaco.com\\\/?s={search_term_string}\"},\"query-input\":{\"@type\":\"PropertyValueSpecification\",\"valueRequired\":true,\"valueName\":\"search_term_string\"}}],\"inLanguage\":\"zh-CN\"},{\"@type\":\"Person\",\"@id\":\"https:\\\/\\\/silvaco.com\\\/#\\\/schema\\\/person\\\/4ff524a4c4ddd2479f80002bf4f50608\",\"name\":\"Casey Molver\",\"image\":{\"@type\":\"ImageObject\",\"inLanguage\":\"zh-CN\",\"@id\":\"https:\\\/\\\/secure.gravatar.com\\\/avatar\\\/3dba2e48e0c4a977ea23fa75d38750a7763843df78307070478340a2517b8d6b?s=96&d=blank&r=g\",\"url\":\"https:\\\/\\\/secure.gravatar.com\\\/avatar\\\/3dba2e48e0c4a977ea23fa75d38750a7763843df78307070478340a2517b8d6b?s=96&d=blank&r=g\",\"contentUrl\":\"https:\\\/\\\/secure.gravatar.com\\\/avatar\\\/3dba2e48e0c4a977ea23fa75d38750a7763843df78307070478340a2517b8d6b?s=96&d=blank&r=g\",\"caption\":\"Casey Molver\"},\"url\":\"https:\\\/\\\/silvaco.com\\\/zh-hans\\\/author\\\/caseym\\\/\"}]}<\/script>\n<!-- \/ Yoast SEO Premium plugin. -->","yoast_head_json":{"title":"TCAD-based Model Extraction Flow for GaN HEMT Devices - Part 2 - Silvaco","description":"This webinar represents a continuation of a previously presented parameter extraction methodology for GaN HEMT devices","robots":{"index":"index","follow":"follow","max-snippet":"max-snippet:-1","max-image-preview":"max-image-preview:large","max-video-preview":"max-video-preview:-1"},"canonical":"https:\/\/silvaco.com\/zh-hans\/tcad-zh-hans\/tcad-webinars-zh-hans\/tcad-based-model-extraction-flow-for-gan-hemt-devices-part-2-2\/","og_locale":"zh_CN","og_type":"article","og_title":"TCAD-based Model Extraction Flow for GaN HEMT Devices - Part 2","og_description":"This webinar represents a continuation of a previously presented parameter extraction methodology for GaN HEMT devices","og_url":"https:\/\/silvaco.com\/zh-hans\/tcad-zh-hans\/tcad-webinars-zh-hans\/tcad-based-model-extraction-flow-for-gan-hemt-devices-part-2-2\/","og_site_name":"Silvaco","article_publisher":"https:\/\/www.facebook.com\/SilvacoSoftware\/","article_published_time":"2019-03-26T16:03:57+00:00","article_modified_time":"2026-10-15T22:01:37+00:00","og_image":[{"url":"https:\/\/silvaco.com\/wp-content\/uploads\/2018\/12\/Webinar.jpg","type":"","width":"","height":""}],"author":"Casey Molver","twitter_card":"summary_large_image","twitter_creator":"@SilvacoSoftware","twitter_site":"@SilvacoSoftware","twitter_misc":{"\u4f5c\u8005":"Casey Molver","\u9884\u8ba1\u9605\u8bfb\u65f6\u95f4":"1 minute"},"schema":{"@context":"https:\/\/schema.org","@graph":[{"@type":"Article","@id":"https:\/\/silvaco.com\/zh-hans\/tcad-zh-hans\/tcad-webinars-zh-hans\/tcad-based-model-extraction-flow-for-gan-hemt-devices-part-2-2\/#article","isPartOf":{"@id":"https:\/\/silvaco.com\/zh-hans\/tcad-zh-hans\/tcad-webinars-zh-hans\/tcad-based-model-extraction-flow-for-gan-hemt-devices-part-2-2\/"},"author":{"name":"Casey Molver","@id":"https:\/\/silvaco.com\/#\/schema\/person\/4ff524a4c4ddd2479f80002bf4f50608"},"headline":"TCAD-based Model Extraction Flow for GaN HEMT Devices &#8211; Part 2","datePublished":"2019-03-26T16:03:57+00:00","dateModified":"2026-10-15T22:01:37+00:00","mainEntityOfPage":{"@id":"https:\/\/silvaco.com\/zh-hans\/tcad-zh-hans\/tcad-webinars-zh-hans\/tcad-based-model-extraction-flow-for-gan-hemt-devices-part-2-2\/"},"wordCount":268,"image":{"@id":"https:\/\/silvaco.com\/zh-hans\/tcad-zh-hans\/tcad-webinars-zh-hans\/tcad-based-model-extraction-flow-for-gan-hemt-devices-part-2-2\/#primaryimage"},"thumbnailUrl":"https:\/\/silvaco.com\/wp-content\/uploads\/2018\/12\/Webinar.jpg","articleSection":["Modeling Webinars","TCAD Webinars"],"inLanguage":"zh-CN"},{"@type":"WebPage","@id":"https:\/\/silvaco.com\/zh-hans\/tcad-zh-hans\/tcad-webinars-zh-hans\/tcad-based-model-extraction-flow-for-gan-hemt-devices-part-2-2\/","url":"https:\/\/silvaco.com\/zh-hans\/tcad-zh-hans\/tcad-webinars-zh-hans\/tcad-based-model-extraction-flow-for-gan-hemt-devices-part-2-2\/","name":"TCAD-based Model Extraction Flow for GaN HEMT Devices - Part 2 - Silvaco","isPartOf":{"@id":"https:\/\/silvaco.com\/#website"},"primaryImageOfPage":{"@id":"https:\/\/silvaco.com\/zh-hans\/tcad-zh-hans\/tcad-webinars-zh-hans\/tcad-based-model-extraction-flow-for-gan-hemt-devices-part-2-2\/#primaryimage"},"image":{"@id":"https:\/\/silvaco.com\/zh-hans\/tcad-zh-hans\/tcad-webinars-zh-hans\/tcad-based-model-extraction-flow-for-gan-hemt-devices-part-2-2\/#primaryimage"},"thumbnailUrl":"https:\/\/silvaco.com\/wp-content\/uploads\/2018\/12\/Webinar.jpg","datePublished":"2019-03-26T16:03:57+00:00","dateModified":"2026-10-15T22:01:37+00:00","author":{"@id":"https:\/\/silvaco.com\/#\/schema\/person\/4ff524a4c4ddd2479f80002bf4f50608"},"description":"This webinar represents a continuation of a previously presented parameter extraction methodology for GaN HEMT devices","breadcrumb":{"@id":"https:\/\/silvaco.com\/zh-hans\/tcad-zh-hans\/tcad-webinars-zh-hans\/tcad-based-model-extraction-flow-for-gan-hemt-devices-part-2-2\/#breadcrumb"},"inLanguage":"zh-CN","potentialAction":[{"@type":"ReadAction","target":["https:\/\/silvaco.com\/zh-hans\/tcad-zh-hans\/tcad-webinars-zh-hans\/tcad-based-model-extraction-flow-for-gan-hemt-devices-part-2-2\/"]}]},{"@type":"ImageObject","inLanguage":"zh-CN","@id":"https:\/\/silvaco.com\/zh-hans\/tcad-zh-hans\/tcad-webinars-zh-hans\/tcad-based-model-extraction-flow-for-gan-hemt-devices-part-2-2\/#primaryimage","url":"https:\/\/silvaco.com\/wp-content\/uploads\/2018\/12\/Webinar.jpg","contentUrl":"https:\/\/silvaco.com\/wp-content\/uploads\/2018\/12\/Webinar.jpg"},{"@type":"BreadcrumbList","@id":"https:\/\/silvaco.com\/zh-hans\/tcad-zh-hans\/tcad-webinars-zh-hans\/tcad-based-model-extraction-flow-for-gan-hemt-devices-part-2-2\/#breadcrumb","itemListElement":[{"@type":"ListItem","position":1,"name":"Home","item":"https:\/\/silvaco.com\/zh-hans\/%e9%a6%96%e9%a1%b5\/"},{"@type":"ListItem","position":2,"name":"TCAD-based Model Extraction Flow for GaN HEMT Devices &#8211; Part 2"}]},{"@type":"WebSite","@id":"https:\/\/silvaco.com\/#website","url":"https:\/\/silvaco.com\/","name":"Silvaco","description":"","potentialAction":[{"@type":"SearchAction","target":{"@type":"EntryPoint","urlTemplate":"https:\/\/silvaco.com\/?s={search_term_string}"},"query-input":{"@type":"PropertyValueSpecification","valueRequired":true,"valueName":"search_term_string"}}],"inLanguage":"zh-CN"},{"@type":"Person","@id":"https:\/\/silvaco.com\/#\/schema\/person\/4ff524a4c4ddd2479f80002bf4f50608","name":"Casey Molver","image":{"@type":"ImageObject","inLanguage":"zh-CN","@id":"https:\/\/secure.gravatar.com\/avatar\/3dba2e48e0c4a977ea23fa75d38750a7763843df78307070478340a2517b8d6b?s=96&d=blank&r=g","url":"https:\/\/secure.gravatar.com\/avatar\/3dba2e48e0c4a977ea23fa75d38750a7763843df78307070478340a2517b8d6b?s=96&d=blank&r=g","contentUrl":"https:\/\/secure.gravatar.com\/avatar\/3dba2e48e0c4a977ea23fa75d38750a7763843df78307070478340a2517b8d6b?s=96&d=blank&r=g","caption":"Casey Molver"},"url":"https:\/\/silvaco.com\/zh-hans\/author\/caseym\/"}]}},"_links":{"self":[{"href":"https:\/\/silvaco.com\/zh-hans\/wp-json\/wp\/v2\/posts\/35957","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/silvaco.com\/zh-hans\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/silvaco.com\/zh-hans\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/silvaco.com\/zh-hans\/wp-json\/wp\/v2\/users\/12"}],"replies":[{"embeddable":true,"href":"https:\/\/silvaco.com\/zh-hans\/wp-json\/wp\/v2\/comments?post=35957"}],"version-history":[{"count":3,"href":"https:\/\/silvaco.com\/zh-hans\/wp-json\/wp\/v2\/posts\/35957\/revisions"}],"predecessor-version":[{"id":956767,"href":"https:\/\/silvaco.com\/zh-hans\/wp-json\/wp\/v2\/posts\/35957\/revisions\/956767"}],"wp:attachment":[{"href":"https:\/\/silvaco.com\/zh-hans\/wp-json\/wp\/v2\/media?parent=35957"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/silvaco.com\/zh-hans\/wp-json\/wp\/v2\/categories?post=35957"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/silvaco.com\/zh-hans\/wp-json\/wp\/v2\/tags?post=35957"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}